APT50M80B2VR
APT50M80LVR
500V 58A 0.080W
POWER MOS V ®
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package
• Faster Switching
D
• 100% Avalanche Tested
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M80
UNIT
500
Volts
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Drain-Source Voltage
58
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VGSM
PD
TJ,TSTG
232
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
58
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
Volts
58
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.080
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
rev- 11-99
BVDSS
Characteristic / Test Conditions
050-5916
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M80 B2VR - LVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
8630
Coss
Output Capacitance
VDS = 25V
1160
Reverse Transfer Capacitance
f = 1 MHz
440
Crss
Qg
Qgs
Total Gate Charge
3
td(on)
Turn-on Delay Time
tf
57
ID = 0.5 ID[Cont.] @ 25°C
151
VGS = 15V
16
VDD = 0.5 VDSS
18
ID = ID[Cont.] @ 25°C
60
RG = 0.6ý
6
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
A
IN
Gate-Drain ("Miller ") Charge
td(off)
360
Gate-Source Charge
Qgd
tr
VGS = 10V
VDD = 0.5 VDSS
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
Continuous Source Current
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
MIN
TYP
MAX
58
(Body Diode)
232
(Body Diode)
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs)
680
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
17.0
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
0.20
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.78mH, R = 25W, Peak I = 58A
j
G
L
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
rev- 11-99
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
5.79 (.228)
6.20 (.244)
Collector
Collector
5.38 (.212)
6.20 (.244)
050-5916
MAX
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
°C/W