APT6017B2LL
APT6017LLL
600V 35A 0.170Ω
POWER MOS 7
R
MOSFET
B2LL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
T-MAX™
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6017B2LL_LLL
UNIT
600
Volts
Drain-Source Voltage
35
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
500
Watts
Linear Derating Factor
4.0
W/°C
PD
TJ,TSTG
1
140
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
35
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
35
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 17.5A)
TYP
MAX
Volts
0.170
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
8-2004
Characteristic / Test Conditions
050-7060 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6017B2LL_LLL
Characteristic
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
3
RESISTIVE SWITCHING
VGS = 15V
VDD = 300V
ID = 35A @ 25°C
RG = 0.6Ω
6
INDUCTIVE SWITCHING @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
425
VDD = 400V, VGS = 15V
nC
ns
350
ID = 35A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
µJ
720
VDD = 400V, VGS = 15V
ID = 35A, RG = 5Ω
UNIT
pF
60
100
25
55
11
7
26
VDD = 300V
Fall Time
MAX
4500
830
ID = 35A @ 25°C
Turn-off Delay Time
tf
TYP
VGS = 10V
Rise Time
td(off)
MIN
Test Conditions
410
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
35
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -35A, dl S/dt = 100A/µs)
600
ns
Q rr
Reverse Recovery Charge (IS = -35A, dl S/dt = 100A/µs)
13
µC
dv/
Peak Diode Recovery
dt
dv/
140
(Body Diode)
1.3
(VGS = 0V, IS = -35A)
dt
5
Amps
Volts
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
0.25
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.61mH, RG = 25Ω, Peak IL = 35A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID35A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.10
0.3
0.05
0
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7060 Rev B
8-2004
0.30
0.25
10-5
t1
t2
0.1
0.05
SINGLE PULSE
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT6017B2LL_LLL
100
0.0230
Power
(watts)
0.108
0.111
0.0067F
0.00995F
0.187F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
80
7.5V
60
7V
40
6.5V
20
6V
Case temperature. (°C)
5.5V
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
80
60
40
TJ = +125°C
20
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
50
60 70
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 17.5A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
D
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 17.5A
GS
1.30
1.15
40
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
8-2004
0
TJ = +25°C
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7060 Rev B
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
8V
VGS =15 &10V
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
I
D
= 35A
12
VDS= 120V
VDS= 300V
8
VDS= 480V
4
0
0
20
40 60
80 100 120 140 160
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
1,000
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT6017B2LL_LLL
20,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
140
100
80
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
td(off)
70
V
DD
R
70
G
= 400V
= 5Ω
T = 125°C
J
V
50
DD
R
G
= 400V
= 5Ω
T = 125°C
J
40
L = 100µH
30
20
50
tf
40
30
tr
20
td(on)
10
0
L = 100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
60
0
1400
10
0
30
40
50
60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
1200
10
20
0
30
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
D
Eoff
J
E ON includes
diode reverse recovery
800
Eoff
Eon
400
SWITCHING ENERGY (µJ)
Eon and Eoff (µJ)
8-2004
= 400V
= 35A
T = 125°C
J
050-7060 Rev B
DD
I
L = 100µH
600
20
2000
= 400V
= 5Ω
T = 125°C
1000
10
1500
L = 100µH
EON includes
diode reverse recovery
1000
Eon
500
200
0
0
10
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6017B2LL_LLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
TJ125°C
Drain Voltage
90%
tr
Drain Current
tf
90%
10%
5%
5%
0
Drain Voltage
10%
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
8-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7060 Rev B
Drain
Drain
20.80 (.819)
21.46 (.845)