ADPOW APT60D20 Ultrafast soft recovery rectifier diode Datasheet

1
2
TO
-24
7
1 - Cathode
2 - Anode
Back of Case - Cathode
APT60D20B
200V
60A
1
2
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-247 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Density
• Low Leakage Current
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 100°C, Duty Cycle = 0.5)
IFSM
TJ,TSTG
TL
UNIT
200
Volts
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
APT60D20B
60
RMS Forward Current
100
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
600
Amps
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
TYP
IRM
Maximum Reverse Leakage Current
Volts
IF = 60A, TJ = 150°C
0.93
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
CT
Junction Capacitance, VR = 150V
LS
Series Inductance (Lead to Lead 5mm from Base)
USA
1.26
IF = 120A
Maximum Forward Voltage
UNIT
1.15
IF = 60A
VF
MAX
µA
215
pF
10
nH
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
053-2001 Rev B
Symbol
APT60D20B
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
70
trr1
Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/µs, VR = 30V, TJ = 25°C
50
trr2
Reverse Recovery Time
TJ = 25°C
36
trr3
IF = 60A, diF /dt = -480A/µs, VR = 100V
TJ = 100°C
71
tfr1
Forward Recovery Time
TJ = 25°C
180
tfr2
IF = 60A, diF /dt = 480A/µs, VR = 100V
TJ = 100°C
180
IRRM1
Reverse Recovery Current
TJ = 25°C
12
20
IRRM2
IF = 60A, diF /dt = -480A/µs, VR = 100V
TJ = 100°C
21
35
Qrr1
Recovery Charge
TJ = 25°C
270
Qrr2
IF = 60A, diF /dt = -480A/µs, VR = 100V
TJ = 100°C
750
Vfr1
Forward Recovery Voltage
TJ = 25°C
7
Vfr2
IF = 60A, diF /dt = 480A/µs, VR = 100V
TJ = 100°C
7
Rate of Fall of Recovery Current
TJ = 25°C
1000
IF = 60A, diF /dt = -480A/µs, VR = 100V
TJ = 100°C
1500
diM/dt
UNIT
ns
Amps
nC
Volts
A/µs
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
WT
Torque
MIN
TYP
UNIT
MAX
0.66
°C/W
40
0.22
oz
6.1
gm
Package Weight
10
lb•in
1.1
N•m
Maximum Mounting Torque (Screw Type = 6-32 or 3mm Machine)
1.0
D=0.5
0.2
0.1
0.05
0.1
0.05
0.02
0.01
Note:
0.01
0.005
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.5
t1
053-2001 Rev B
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
APT60D20B
2000
Qrr, REVERSE RECOVERY CHARGE
(nano-COULOMBS)
160
TJ = 150°C
120
TJ = 100°C
TJ = 25°C
80
TJ = -55°C
40
0
0
0.4
0.8
1.2
1.6
2.0
VF, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 2, Forward Voltage Drop vs Forward Current
1600
120A
1200
800
400
30A
2.0
TJ = 100°C
VR = 100V
Kf, DYNAMIC PARAMETERS
(NORMALIZED)
50
120A
40
30
60A
30A
20
10
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 4, Reverse Recovery Current vs Current Slew Rate
1.6
Qrr
trr
1.2
trr
0.8
IRRM
Qrr
0.4
0.0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, Dynamic Parameters vs Junction Temperature
100
-50
tfr, FORWARD RECOVERY TIME
(nano-SECONDS)
90
120A
80
15.0
3000
TJ = 100°C
VR = 100V
trr, REVERSE RECOVERY TIME
(nano-SECONDS)
60A
0
10
50
100
500 1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 3, Reverse Recovery Charge vs Current Slew Rate
60
IRRM, REVERSE RECOVERY CURRENT
(AMPERES)
TJ = 100°C
VR = 100V
60A
30A
70
60
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 6, Reverse Recovery Time vs Current Slew Rate
2500
TJ = 100°C
VR = 100V
IF = 60A
2000
12.5
10.0
Vfr
1500
7.5
1000
5.0
2.5
500
tfr
Vfr, FORWARD RECOVERY VOLTAGE
(VOLTS)
IF, FORWARD CURRENT
(AMPERES)
200
0
0
0
200
400
600
800
1000
diF /dt, CURRENT SLEW RATE (AMPERES/µSEC)
Figure 7, Forward Recovery Voltage/Time vs Current Slew Rate
1000
500
200
100
0.01
0.05
0.1
Figure 8, Junction Capacitance vs Reverse Voltage
0.5
1
5
VR, REVERSE VOLTAGE (VOLTS)
10
50
100
200
053-2001 Rev B
CJ, JUNCTION CAPACITANCE
(pico-FARADS)
3000
APT60D20B
Vr
D.U.T.
trr/Qrr
Waveform
30µH
PEARSON 411
CURRENT
TRANSFORMER
+15v
diF /dt Adjust
0v
-15v
Figure 9, Diode Reverse Recovery Test Circuit and Waveforms
1
IF - Forward Conduction Current
2
diF /dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
3
IRRM - Peak Reverse Recovery Current.
4
trr - Reverse Recovery Time Measured from Point of IF
1
4
6
Zero
5
3
Current Falling Through Zero to a Tangent Line { 6 diM/dt}
Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM.
0.5 IRRM
0.75 IRRM
2
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Qrr = 1/2 (trr . IRRM)
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Cathode
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Anode
053-2001 Rev B
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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