Microsemi APT75DL60BG Ultrasoft recovery rectifi er diode Datasheet

APT75DL60B(G)
APT75DL60S(G)
600V 75A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Ultrasoft Recovery Times (trr)
• Soft Switching - High Qrr
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
TO
- 24
7
D3PAK
1
2
1
2
(S)
2
1
1 - Cathode
2 - Anode
Back of Case - Cathode
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
Characteristic / Test Conditions
Ratings
Unit
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward current (TC = 112°C, Duty Cycle = 0.5)
75
IF(RMS)
RMS Forward Currrent (Square wave, 50% duty)
121
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
320
IFSM
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
Amps
-55 to 175
°C
Lead Temperature for 10 Seconds
300
STATIC ELECTRICAL CHARACTERISTICS
VF
Characteristic / Test Conditions
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Min
Typ
Max
IF = 75A
1.25
1.6
IF = 150A
2.0
IF = 75A, TJ = 125°C
1.25
Volts
VR = 600V
25
VR = 600V, TJ = 125°C
250
μA
69
Microsemi Website - http://www.microsemi.com
Unit
pF
052-6317 Rev B 6 - 2009
Symbol
APT75DL60B_S(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic / Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
trr
Min
Typ
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Max
Unit
56
ns
460
IF = 75A, diF/dt = -200A/μs
VR = 400V, TC = 25°C
Reverse Recovery Time
IF = 75A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
2174
nC
11
Amps
597
ns
4326
nC
Qrr
Reverse Recovery Charge
IRRM
Maximum Reverse Recovery Current
15
Amps
trr
Reverse Recovery Time
355
ns
Qrr
Reverse Recovery Charge
7215
nC
IRRM
Maximum Reverse Recovery Current
42
Amps
IF = 75A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
WT
Min
Typ
Max
Unit
0.40
°C/W
0.22
oz
5.9
g
Package Weight
Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.40
0.35
0.30
0.25
0.20
Note:
0.15
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.45
t1
t2
0.10
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6317 Rev B 6 - 2009
10
lb·in
1.1
N·m
Maximum Mounting Torque
APT75DL60B_S(G)
TYPICAL PERFORMANCE CURVES
160
800
trr, COLLECTOR CURRENT (A)
TJ= 25°C
100
80
60
40
20
0
0
1
2
75A
7000
6000
37.5A
5000
4000
3000
2000
1000
0
0
200
400
600
800
1000
300
200
100
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
50
T = 125°C
J
V = 400V
45
150A
R
40
35
75A
30
25
20
37.5A
15
10
5
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
160
140
1.0
120
IRRM
0.8
tRR
QRR
0.6
100
80
60
0.4
40
0.2
0
20
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
700
CJ, JUNCTION CAPACITANCE (pF)
400
0
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
37.5A
0
25
50
75
100
125
150
175
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
600
500
400
300
200
100
0
1
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
052-6317 Rev B 6 - 2009
Qrr, REVERSE RECOVERY CHARGE
(nC)
8000
75A
500
3
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
10000
T = 125°C
150A
J
V = 400V
9000
R
R
600
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT (A)
700
TJ= 150°C
TJ= 55°C
120
T = 125°C
J
V = 400V
150A
TJ= 125°C
140
APT75DL60B_S(G)
Vr
diF /dt Adjust
+18V
0V
D.U.T.
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
1
4
6
Zero
5
5
Qrr - Area Under the Curve Defined by IRRM and trr.
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
0.25 IRRM
3
Slope = diM/dt
2
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
Cathode
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05(.632)
1.00 (.039)
1.15(.045)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.65 (.026)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
13.30 (.524)
13.60(.535)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
052-6317 Rev B 6 - 2009
Cathode
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 100% Sn
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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