APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-Max® APT75F50B2 TO-264 APT75F50L Single die FREDFET D G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 75 Continuous Drain Current @ TC = 100°C 47 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1580 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 37 A 1 230 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264Package), 4.40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 05-2009 Typ Rev C Min Characteristic 050-8126 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol VGS = 10V, ID = 37A 3 VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C VGS = ±30V Forward Transconductance Min Test Conditions VDS = 50V, ID = 37A Typ Output Capacitance 55 11600 160 1250 725 365 290 65 130 45 55 120 39 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Max 0.075 5 Unit V V/°C Ω V mV/°C 250 1000 ±100 µA nA TJ = 25°C unless otherwise specified Parameter gfs Typ 500 0.60 0.064 2.5 4 -10 Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) Min APT75F50B2_L VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max Unit S pF VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time VGS = 0 to 10V, ID = 37A, VDS = 250V Resistive Switching VDD = 333V, ID = 37A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 75 S 230 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit A G ISD = 37A, TJ = 25°C, VGS = 0V ISD = 37A 3 Typ TJ = 125°C 1.48 3.85 11.3 16.6 ISD ≤ 37A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1.0 310 570 V ns µC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8126 Rev C 05-2009 2 Starting at TJ = 25°C, L = 2.31mH, RG = 25Ω, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. 300 V GS = 10V J TJ = -55°C 200 TJ = 25°C 150 100 TJ = 150°C 50 ID, DRIAN CURRENT (A) 100 80 6V 60 5.5V 40 TJ = 125°C 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 2.5 5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 250 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 37A 2.0 200 ID, DRAIN CURRENT (A) 1.5 1.0 0.5 150 TJ = -55°C TJ = 25°C 100 TJ = 125°C 50 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 10,000 TJ = -55°C Ciss 80 TJ = 125°C 40 1000 Coss 100 Crss 20 0 16 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 0 0 200 ID = 37A 14 0 10 80 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 0 180 160 140 120 TJ = 25°C 100 80 TJ = 150°C 60 40 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 05-2009 60 C, CAPACITANCE (pF) TJ = 25°C Rev C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = 7 & 10V 20 100 gfs, TRANSCONDUCTANCE GS 6.5V Figure 1, Output Characteristics VGS, GATE-TO-SOURCE VOLTAGE (V) V 050-8126 ID, DRAIN CURRENT (A) T = 125°C 120 250 0 APT75F50B2_L 140 APT75F50B2_L 300 300 100 IDM 10 13µs 100µs 1ms 10ms Rds(on) 100ms DC line 1 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 TJ = 125°C TC = 75°C 1 13µs 100µs 1ms 10ms 10 Rds(on) 100ms DC line TJ = 150°C TC = 25°C 1 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area IDM Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 t1 0.3 0.04 t2 t1 = Pulse Duration t 0.02 0 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX® (B2) Package Outline 1.0 TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 05-2009 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 050-8126 Rev C Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source