APT7F80K 800V, 7A, 1.50Ω MAX,TRR ≤ 160nS N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D APT7F80K Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 7 Continuous Drain Current @ TC = 100°C 4.5 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 285 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 4 A 1 25 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 225 RθJC Junction to Case Thermal Resistance 0.56 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range 150 °C Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight 300 0.07 oz 1.2 g 10 in·lbf 1.1 N·m Mounting Torque ( TO-220 Package), 4-40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 05-2009 TL Torque -55 Rev C TJ,TSTG °C/W 0.11 050-8139 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ Min 800 VGS = 10V, ID = 4A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 0.87 1.39 4 -10 1.50 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 0.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT7F80K Min Test Conditions VDS = 50V, ID = 4A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 6 1335 23 135 Max Unit S pF 65 VGS = 0V, VDS = 0V to 533V 31 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 533V, ID = 4A tr td(off) tf Turn-Off Delay Time 43 7 22 8 11 33 10 VGS = 0 to 10V, ID = 4A, VDS = 400V RG = 10Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A 25 S TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/µs TJ = 25°C Unit 7 G ISD = 4A, TJ = 25°C, VGS = 0V ISD = 4A 3 Max TJ = 125°C ISD ≤ 4A, di/dt ≤1000A/µs, VDD = 533V, TJ = 125°C 140 220 0.45 0.94 7.03 9.82 1.3 160 260 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 35.63mH, RG = 25Ω, IAS = 4A. 050-8139 Rev C 05-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 4.24E-9/VDS^2 + 5.44E-9/VDS + 2.10E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT7F80K 7 14 V GS = 10V T = 125°C J 12 TJ = -55°C = 10, & 15V GS V ID, DRIAN CURRENT (A) 10 TJ = 25°C 8 6 4 TJ = 125°C 2 = 6, & 6.5V 5.5V GS 5 4 3 5V 2 4.5V 1 TJ = 150°C 0 4V 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 2, Output Characteristics 25 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 4A 2.5 20 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 TJ = 25°C TJ = 125°C 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 2,000 1,000 TJ = -55°C Ciss 8 C, CAPACITANCE (pF) TJ = 25°C TJ = 125°C 6 4 100 Coss 10 Crss 2 0 1 2 3 4 5 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 0 100 200 300 400 500 600 700 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 25 16 ID = 4A 14 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 0 1 6 20 15 TJ = 25°C TJ = 150°C 10 05-2009 0 ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE TJ = -55°C 10 5 0.5 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 15 5 0 0 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 050-8139 ID, DRAIN CURRENT (A) V 6 APT7F80K 50 IDM 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 13µs 100µs 1 1ms Rds(on) 10ms IDM 10 Rds(on) 13µs 100µs 1 100ms 0.1 TJ = 125°C TC = 75°C 1 1ms 10ms 100ms DC line TJ = 150°C TC = 25°C Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.50 0.40 0.7 0.30 0.5 0.20 0.3 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 t2 t1 = Pulse Duration SINGLE PULSE 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 0 10-5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration TO-220 (K) Package Outline e3 100% Sn Plated Gate Drain Source 050-8139 Rev C 05-2009 Drain Dimensions in Inches and (Millimeters) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 1.0