APTC80DDA29T3 Dual Boost chopper VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Super Junction MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features • Q2 Q1 26 4 27 3 29 30 31 15 16 R1 28 27 26 25 23 22 • • 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 • • 32 8 10 11 12 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 15 11 60 ±30 290 156 24 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTC80DDA29T3 – Rev 0 September, 2004 Absolute maximum ratings APTC80DDA29T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Test Conditions VGS = 0V VDS = 25V f = 1MHz VR=1000V IF(A V) Maximum Average Forward Current 50% duty cycle Diode Forward Voltage IF = 30A IF = 60A IF = 30A Qrr Reverse Recovery Charge Min Typ 2254 1046 54 90 IF = 30A VR = 667V di/dt=200A/µs Max Unit V 25 250 290 3.9 ±100 mΩ V nA Max Unit µA pF 11 nC 45 Test Conditions Maximum Reverse Leakage Current Reverse Recovery Time 3 Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, R G = 5Ω IRM trr 2.1 VGS = 10V VBus = 400V ID = 15A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Diode ratings and characteristics VF Min 800 10 13 83 35 243 µJ 139 425 µJ 171 Min 1000 Tj = 25°C Tj = 125°C Tc = 70°C ns Typ Max 250 750 Tj = 125°C 30 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 670 Tj = 125°C 2350 Unit V µA A 2.3 V ns nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTC80DDA29T3 – Rev 0 September, 2004 Symbol BVDSS APTC80DDA29T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min R 25 1 1 exp B25 / 85 − T T 25 Unit °C/W V 150 125 100 4.7 110 M4 Temperature sensor NTC RT = 2500 -40 -40 -40 Max 0.8 1.2 Typ 68 4080 Max °C N.m g Unit kΩ K T: Thermistor temperature RT : Thermistor value at T 28 17 1 12 APT website – http://www.advancedpower.com 3–6 APTC80DDA29T3 – Rev 0 September, 2004 Package outline APTC80DDA29T3 Typical performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0 0.00001 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 40 VGS =15&10V 6.5V 30 25 6V 20 5.5V 15 5V 10 4.5V 5 30 20 TJ =25°C 10 TJ =125°C 4V TJ =-55°C 0 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 16 Normalized to V GS=10V @ 7.5A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 40 VGS=10V 1.2 VGS=20V 1.1 1 0.9 14 12 10 8 6 4 2 0 0.8 0 5 10 15 20 I D, Drain Current (A) 25 30 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4–6 APTC80DDA29T3 – Rev 0 September, 2004 ID, Drain Current (A) 35 ID, Drain Current (A) 50 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 100 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 -50 0 50 100 limited by RDSon 1ms 1 1 1000 Coss 100 Crss 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Ciss 10ms Single pulse TJ =150°C 100ms 0 150 Capacitance vs Drain to Source Voltage 10000 100µs 10 TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 7.5A 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=15A T J=25°C 14 V DS =160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 20 APT website – http://www.advancedpower.com 40 60 80 100 Gate Charge (nC) 5–6 APTC80DDA29T3 – Rev 0 September, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80DDA29T3 APTC80DDA29T3 Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=5Ω T J=125°C L=100µH 60 40 t r and tf (ns) td(on) 20 30 VDS=533V RG=5Ω T J=125°C L=100µH 20 10 0 0 5 10 15 20 I D, Drain Current (A) 25 5 600 500 Eon Switching Energy (µJ) Eon and Eoff (µJ) 1250 VDS=533V RG=5Ω TJ=125°C L=100µH 700 10 15 20 I D, Drain Current (A) 400 300 Eoff 200 25 Switching Energy vs Gate Resistance Switching Energy vs Current 800 100 VDS=533V ID=15A T J=125°C L=100µH 1000 Eoff 750 Eon 500 250 0 0 5 10 15 20 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS 300 ZCS 250 VDS=533V D=50% RG=5Ω T J=125°C T C=75°C 200 150 100 Hard switching 50 0 4 6 8 10 12 ID, Drain Current (A) 14 10 20 30 40 Gate Resistance (Ohms) 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 350 0 25 400 Frequency (kHz) tr 100 TJ =150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 V SD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTC80DDA29T3 – Rev 0 September, 2004 td(on) and td(off) (ns) td(off) 80