APTGT50A120T Phase leg Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control NTC2 Q1 G1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring E1 OUT Q2 G2 E2 NTC1 G2 E2 VBUS Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile OUT OUT 0/VBUS E1 E2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 75 50 100 ±20 277 Tj = 125°C 100A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A May, 2005 0/VBU S V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT50A120T – Rev 0 VBUS VCES = 1200V IC = 50A @ Tc = 80°C APTGT50A120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz 5.0 Min Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 18 Ω Test Conditions Typ 1.7 2.0 5.8 Typ 3600 190 160 90 30 420 Max Unit 500 2.1 µA 6.5 400 V nA Max Unit pF ns 70 90 50 520 90 5 5.5 Min Typ ns mJ Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 50A trr Reverse Recovery Time IF = 50A VR = 600V Qrr Reverse Recovery Charge di/dt =2000A/µs V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Unit 250 500 50 1.4 1.3 150 250 4.5 9 µA A 1.9 V ns µC May, 2005 IRM V APT website – http://www.advancedpower.com 2-5 APTGT50A120T – Rev 0 Symbol Cies Coes Cres Td(on) Tr Td(off) Min APTGT50A120T Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.45 0.58 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 1.5 °C/W V 150 125 100 4.7 160 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT50A120T – Rev 0 May, 2005 Package outline (dimensions in mm) APTGT50A120T Typical Performance Curve Output Characteristics (VGE =15V) 100 Output Characteristics 100 TJ = 125°C T J=25°C 80 80 V GE=17V VGE=13V 60 IC (A) IC (A) TJ=125°C 40 40 20 20 0 V GE=15V 60 VGE=9V 0 0 0.5 1 1.5 2 V CE (V) 2.5 3 0 3.5 12 TJ =25°C 8 60 E (mJ) IC (A) VCE = 600V VGE = 15V RG = 18Ω TJ = 125°C 10 TJ =125°C 40 3 4 6 Eon Eon Eoff Er 4 20 2 T J=125°C 0 0 5 6 7 8 9 10 11 0 12 20 Switching Energy Losses vs Gate Resistance 12 8 60 80 100 Reverse Bias Safe Operating Area 120 VCE = 600V VGE =15V IC = 50A TJ = 125°C 10 40 IC (A) V GE (V) Eon 100 80 Eoff 6 4 IC (A) E (mJ) 2 VCE (V) Energy losses vs Collector Current Transfert Characteristics 100 80 1 60 40 Er 2 VGE =15V TJ=125°C RG=18Ω 20 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) 70 80 0 300 600 900 V CE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.4 IGBT 0.9 0.7 May, 2005 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT50A120T – Rev 0 Thermal Impedance (°C/W) 0.5 APTGT50A120T Forward Characteristic of diode 150 70 VCE=600V D=50% RG=18Ω TJ=125°C TC=75°C ZVS 60 50 40 30 125 100 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 80 50 ZCS 20 hard switching 10 TJ=125°C 75 25 TJ=125°C TJ=25°C 0 0 0 10 20 30 40 50 IC (A) 60 70 0 80 0.5 1 1.5 VF (V) 2 2.5 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 Diode 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT50A120T – Rev 0 May, 2005 rectangular Pulse Duration (Seconds)