ADPOW APTM20UM04S-ALN Single switch series & parallel diodes mosfet power module Datasheet

APTM20UM04S-AlN
Single switch
Series & parallel diodes
MOSFET Power Module
CR1
D
S
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
G
D
SK
G
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
200
417
310
1670
±30
4
1560
100
50
3000
Unit
V
A
V
mΩ
W
A
July, 2004
Q1
S
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20UM04S– -AlN Rev 0
SK
VDSS = 200V
RDSon = 4mΩ max @ Tj = 25°C
ID = 417A @ Tc = 25°C
APTM20UM04S-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
BVDSS
IDSS
RDS(on)
VGS(th)
IGSS
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 500µA
Min
200
Tj = 25°C
VGS = 0V,VDS = 160V Tj = 125°C
VGS = 10V, ID = 208.5A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
VGS = 0V,VDS = 200V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
3
Min
VGS = 10V
VBus = 100V
ID = 417A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
28.8
9.32
0.58
560
Max
Unit
V
500
2000
4
5
±200
mΩ
V
nA
Max
Unit
µA
nF
nC
212
268
32
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 417A
R G = 1.2Ω
Rise Time
Typ
64
ns
88
116
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 417A, R G = 1.2Ω
3396
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 417A, R G = 1.2Ω
3744
µJ
3716
µJ
3944
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 360A
IF = 720A
IF = 360A
IF = 360A
VR = 133V
di/dt = 1000A/µs
IF = 360A
VR = 133V
di/dt = 1000A/µs
Min
Tj = 125°C
Typ
360
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
360
Tj = 125°C
1500
T c = 85°C
APT website – http://www.advancedpower.com
Max
Unit
A
1.15
V
July, 2004
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
ns
nC
2–6
APTM20UM04S– -AlN Rev 0
Series diode ratings and characteristics
APTM20UM04S-AlN
Parallel diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 360A
IF = 720A
IF = 360A
IF = 360A
VR = 133V
di/dt = 1000A/µs
IF = 360A
VR = 133V
di/dt = 1000A/µs
Min
Tj = 125°C
Typ
360
1.1
1.4
0.9
Tj = 25°C
31
Tj = 125°C
60
Tj = 25°C
360
Tj = 125°C
1500
T c = 85°C
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series Diode
Parallel Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
Unit
A
1.15
V
ns
nC
Max
0.08
0.12
0.12
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM20UM04S– -AlN Rev 0
July, 2004
Package outline
APTM20UM04S-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.09
0.08
0.9
0.07
0.7
0.06
0.05
0.5
0.04
0.03
0.3
0.02
Single Pulse
0.1
0.01
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
VGS=15V
1200
10V
1000
9V
800
8.5V
600
8V
7.5V
400
7V
200
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
1000
800
600
400
TJ=25°C
200
TJ=125°C
6.5V
0
0
4
8
12
16
20
24
28
0
VDS , Drain to Source Voltage (V)
1.2
Normalized to
V GS=10V @ 208.5A
1.1
1 2 3 4 5 6 7 8 9 10
VGS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
450
RDS(on) vs Drain Current
ID, DC Drain Current (A)
VGS=10V
1
VGS=20V
0.9
0.8
400
350
300
250
200
150
100
50
0
0
100
200
300
400
ID, Drain Current (A)
500
600
25
50
75
100
125
150
July, 2004
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM20UM04S– -AlN Rev 0
ID, Drain Current (A)
Transfert Characteristics
1200
ID, Drain Current (A)
1400
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
VGS=10V
ID= 208.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
25
50
75 100 125 150
Maximum Safe Operating Area
0.6
1000
limited by
RDSon
100µs
100
10
1ms
10ms
100ms
Single pulse
TJ=150°C
1
-50 -25
0
25 50 75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
Coss
10000
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=417A
V DS=40V
12
TJ =25°C
VDS=100V
10
8
VDS=160V
6
4
2
0
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
July, 2004
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
10000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
APT website – http://www.advancedpower.com
5–6
APTM20UM04S– -AlN Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM20UM04S-AlN
APTM20UM04S-AlN
Delay Times vs Current
Rise and Fall times vs Current
160
120
VDS=133V
RG=1.2Ω
T J=125°C
L=100µH
60
40
t r and tf (ns)
t d(on) and td(off) (ns)
td(off)
80
t d(on)
120
100
80
tr
60
20
0
0
0
100 200 300 400 500 600 700
I D, Drain Current (A)
0
Eoff
Eon
2
Switching Energy (mJ)
VDS=133V
RG=1.2Ω
TJ=125°C
L=100µH
4
0
V DS=133V
ID=417A
T J=125°C
L=100µH
12
10
Eoff
8
6
Eon
4
100 200 300 400 500 600 700
0
I D, Drain Current (A)
Operating Frequency vs Drain Current
250
ZCS
V DS=133V
D=50%
RG=1.2Ω
T J=125°C
T C=75°C
ZVS
Hard
switching
0
50
100 150 200 250 300 350 400
7.5
10
12.5
15
1000
TJ=150°C
100
TJ =25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM20UM04S– -AlN Rev 0
July, 2004
I D, Drain Current (A)
5
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
200
2.5
Gate Resistance (Ohms)
350
50
600
2
0
100
200 300 400 500
ID, Drain Current (A)
14
6
150
100
Switching Energy vs Gate Resistance
Switching Energy vs Current
8
Eon and Eoff (mJ)
tf
40
20
Frequency (kHz)
V DS=133V
R G=1.2Ω
T J=125°C
L=100µH
140
100
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