Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS General Description Features The AS358/358A consist of two independent, high gain and internally frequency compensated operational amplifiers, they are specifically designed to operate from a single power supply. Operation from split power supply is also possible and the low power supply current drain is independent of the magnitude of the power supply voltages. Typical applications include transducer amplifiers, DC gain blocks and most conventional operational amplifier circuits. · · · · · · · The AS358/358A series are compatible with industry standard 358. AS358A has more stringent input offset voltage than AS358. · The AS358 is available in DIP-8, TDIP-8, SOIC-8, TSSOP-8 and MSOP-8 packages, AS358A is available in DIP-8 and SOIC-8 packages. SOIC-8 AS358/358A Internally Frequency Compensated for Unity Gain Large Voltage Gain: 100dB (Typical) Low Input Bias Current: 20nA (Typical) Low Input Offset Voltage: 2mV (Typical) Low Supply Current: 0.5mA (Typical) Wide Power Supply Voltage: Single Supply: 3V to 36V Dual Supplies: ± 1.5V to ± 18V Input Common Mode Voltage Range Includes Ground Large Output Voltage Swing: 0V to VCC -1.5V Applications · · · Battery Charger Cordless Telephone Switching Power Supply TDIP-8 DIP-8 TSSOP-8 MSOP-8 Figure 1. Package Types of AS358/358A Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 1 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Pin Configuration M/G/MM Package P/PT Package (SOIC-8/TSSOP-8/MSOP-8) (DIP-8/TDIP-8) OUTPUT 1 1 8 VCC OUTPUT 2 INPUT 1- 2 7 OUTPUT 2 6 INPUT 2- INPUT 1+ 3 6 INPUT 2- 5 INPUT 2+ GND 4 5 INPUT 2+ OUTPUT 1 1 8 VCC INPUT 1- 2 7 INPUT 1+ 3 GND 4 Figure 2. Pin Configuration of AS358/358A (Top View) Functional Block Diagram VCC 6μA 4μA 100μA Q5 Q6 Q2 - Q3 Cc Q7 Q4 Q1 Rsc INPUTS OUTPUT + Q11 Q10 Q8 Q9 Q13 Q12 50μA Figure 3. Functional Block Diagram of AS358/358A (Each Amplifier) Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 2 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Ordering Information - AS358 E1: Lead Free G1: Green Circuit Type TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 PT: TDIP-8 G: TSSOP-8 MM: MSOP-8 Blank: AS358 A: AS358A Package Temperature Range Part Number Lead Free AS358M-E1 SOIC-8 DIP-8 TDIP-8 TSSOP-8 MSOP-8 -40 to 85oC -40 to 85oC Marking ID Green Lead Free AS358M-G1 AS358M-E1 AS358MTR-E1 AS358MTR-G1 AS358AM-E1 AS358AM-G1 AS358AMTR-E1 AS358P-E1 AS358AP-E1 Green Packing Type AS358M-G1 Tube AS358M-E1 AS358M-G1 Tape & Reel AS358AM-E1 AS358AM-G1 Tube AS358AMTR-G1 AS358AM-E1 AS358AM-G1 Tape & Reel AS358P-G1 AS358P-E1 AS358P-G1 Tube AS358AP-G1 AS358AP-E1 AS358AP-G1 Tube AS358PT-G1 Tube AS358PT-G1 -40 to 85oC -40 to 85oC AS358GTR-E1 AS358GTR-G1 EG3A GG3A Tape & Reel -40 to 85oC AS358MMTR-E1 AS358MMTR-G1 AS358MM-E1 AS358MM-G1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 3 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Absolute Maximum Ratings (Note 1) Parameter Symbol VCC Value Unit 40 V Differential Input Voltage VID 40 V Input Voltage VIC Power Supply Voltage -0.3 to 40 DIP-8 SOIC-8 TSSOP-8 MSOP-8 V 830 550 500 470 Power Dissipation (TA=25oC) PD Operating Junction Temperature TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Storage Temperature Range Lead Temperature (Soldering, 10 Seconds) mW o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Operating Temperature Range Symbol Min Max VCC 3 36 V TA -40 85 oC Jan. 2013 Rev. 2. 2 Unit BCD Semiconductor Manufacturing Limited 4 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Electrical Characteristics Limits in standard typeface are for TA=25oC, bold typeface applies over -40oC to 85oC (Note 2), VCC=5V, GND=0V, unless otherwise specified. Parameter Symbol VIO Input Offset Voltage Average Temperature Coefficient of Input Offset Voltage Test Conditions VO=1.4V, RS=0Ω, VCC=5V to 30V Min AS358 IIN+ - IIN-, VCM=0V Input Common Mode Voltage Range (Note 3) VIR VCC=30V Supply Current ICC TA=-40 to 85oC, RL=∞, VCC=30V Large Signal Voltage Gain GV Power Ratio Supply Rejection Channel Separation Source TA=-40 to 85 C, RL=∞, VCC=5V PSRR VCC=5V to 30V CS f=1kHz to 20kHz ISC Thermal Resistance (Junction to Case) 2 0.5 1.2 100 20 70 100 VCC=15V VCC=5V, RL= 10kΩ mA dB 40 mA 15 mA μA 50 40 V dB 5 12 nA dB 20 10 nA dB -120 VIN+=0V, VIN-=1V, VCC=15V, VO=2V VCC=30V, RL=10kΩ θJC 0.7 60 VOH VOL VCC -1.5 80 70 VCC=30V, RL=2kΩ Output Voltage Swing 30 60 VIN+=0V,VIN-=1V,VCC=15V, VO=0.2V Output Short Circuit Current to Ground 85 60 ISOURCE VIN+=1V, VIN-=0V, VCC=15V, VO=2V ISINK 200 100 o DC, VCM=0V to (VCC-1.5)V Output Current Sink 5 0 CMRR mV μV/oC 200 VCC=15V, VO=1V to 11V, RL ≥ 2kΩ Unit 5 20 IIO Rejection 3 7 Input Offset Current Mode 5 2 ΔVIO/ΔT TA=-40 to 85oC IIN+ or IIN-, VCM=0V Common Ratio Max 2 7 AS358A IBIAS Input Bias Current Typ 60 mA 26 26 27 V 28 27 5 20 30 DIP-8 53 SOIC-8 78 mV oC/W Note 2: Limits over the full temperature are guaranteed by design, but not tested in production. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 5 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Electrical Characteristics (Continued) Note 3: The input common-mode voltage of either input signal voltage should not be allowed to go negatively by more than 0.3V (at 25oC). The upper end of the common-mode voltage range is VCC-1.5V (at 25oC), but either or both inputs can go to +36V without damages, independent of the magnitude of the VCC. Typical Performance Characteristics 15 20 18 Input Current (nA) Input Voltage (+VDC) 16 10 NEGATIVE POSITIVE 5 14 12 10 8 6 4 2 0 0 5 10 0 15 -25 0 Power Supply Voltage (+VDC) 25 50 75 100 125 o Temperature ( C) Figure 4. Input Voltage Range Figure 5. Input Current 120 1.0 0.9 105 0.7 Voltage Gain (dB) Supply Current (mA) 0.8 0.6 0.5 0.4 0.3 RL=2KΩ RL=20KΩ 90 75 0.2 0.1 0.0 60 0 5 10 15 20 25 30 35 40 Supply Voltage (V) 0 8 16 24 32 40 Power Supply Voltage (V) Figure 6. Supply Current Figure 7. Voltage Gain Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 6 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Performance Characteristics (Continued) 4 120 Output Voltage (V) 110 100 90 Voltage Gain (dB) 80 70 2 1 0 60 Input Voltage (V) 50 40 30 20 10 0 3 1 10 100 1k 10k 100k 3 2 1 0 0 1M 4 8 Frequency (Hz) 12 16 20 24 28 32 36 40 Time (μs) Figure 8. Open Loop Frequency Response Figure 9. Voltage Follower Pulse Response 20 800 15 600 Output Swing (V) Output Voltage (mV) 700 500 400 300 200 10 5 100 0 4 8 12 16 0 1k 20 Time (μs) 10k 100k 1M Frequency (Hz) Figure 10. Voltage Follower Pulse Response Figure 11. Large Signal Frequency Response (Small Signal) Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 7 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Performance Characteristics (Continued) 10 7 6 Output Voltage (V) Output Voltage Referenced to Vcc (V) 8 5 4 3 1 VCC=5V VCC=15V 0.1 2 1 0 0.1 1 10 0.01 1E-3 100 0.01 0.1 1 10 100 Output Sink Current (mA) Output Source Current (mA) Figure 12. Output Characteristics: Current Sourcing Figure 13. Output Characteristics: Current Sinking 100 90 Output Current (mA) 80 70 60 50 40 30 20 10 0 -25 0 25 50 75 100 125 o Temperature ( C) Figure 14. Current Limiting Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 8 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Application R1 Opto Isolator R6 - VCC 1/2 AS358/A AC Line + SMPS Battery Pack GND R7 R3 R4 R5 VCC 1/2 AS358/A + GND - Current R2 Sense AZ431 R8 Figure 15. Battery Charger R1 910K R1 100k +V1 R2 100K R3 91K VCC +V2 1/2 AS358/A R3 100k VO + VIN(+) + R2 100k +V4 Figure 16. Power Amplifier 1/2 AS358/A VO - R6 100k +V3 RL R5 100k R4 100k Figure 17. DC Summing Amplifier Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 9 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Typical Application (Continued) VCC R2 1M R1 100k C1 0.1μF - CO VO 1/2 AS358/A RB 6.2k + CIN R3 1M AC + 2V - RL 10k R1 2K R2 1/2 AS358/A R4 100k VCC C2 10μF + 2V - R3 2K R5 100k I1 + R4 3K AV=1+R2/R1 I2 1mA AV=11 (As shown) Figure 19. Fixed Current Sources Figure 18. AC Coupled Non-Inverting Amplifier R1 1M C1 0.01μF 0.001μF R2 100k R1 16K - R2 16k + VIN 1/2 AS358/A C2 0.01μF VO - + R3 100k R3 100k VO R5 100k VCC VO 1/2 AS358/A 0 R4 100k fO fO=1kHz Q=1 AV=2 R4 100k Figure 21. DC Coupled Low-Pass Active Filter Figure 20. Pulse Generator Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 10 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 5° 6° 2.540(0.100) TYP 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 11 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) TDIP-8 1.500(0.059) 1.700(0.067) Unit: mm(inch) 0.500(0.020)MIN 0.600(0.024) 0.800(0.031) 3.300(0.130)MAX 7.570(0.298) 8.200(0.323) 3.100(0.122) 3.500(0.138) 0.940(0.037) 1.040(0.041) 0.390(0.015) 0.550(0.022) 8.200(0.323) 9.400(0.370) 1.470(0.058) 1.670(0.066) 2.540(0.100) BCS 9.150(0.360) 9.350(0.368) 6.250(0.246) 6.450(0.254) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 12 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1° 5° R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 13 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) SEE DETAIL A 2.900(0.114) 3.100(0.122) 0.050(0.002) 0.150(0.006) 0.090(0.004) 0.200(0.008) 1.200(0.047) MAX 0.800(0.031) 1.050(0.041) 12 ° TOP & BOTTOM GAGE PLANE TYP 6.400(0.252) 4.500(0.177) R0.090(0.004) 0° 8° 0.650(0.026) TYP 0.400(0.016) 4.300(0.169) R0.090(0.004) 0.450(0.018) 0.750(0.030) SEATING PLANE 0.190(0.007) 0.300(0.012) 1.000(0.039) REF 0.250(0.010) TYP 1.950(0.077) TYP DETAIL A Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 14 Data Sheet LOW POWER DUAL OPERATIONAL AMPLIFIERS AS358/358A Mechanical Dimensions (Continued) MSOP-8 Unit: mm(inch) 0.300(0.012)TYP P 0.150(0.006)TY 2.900(0.114) 3.100(0.122) 4.700(0.185) 5.100(0.201) 0.410(0.016) 0.650(0.026) 0.650(0.026)TYP 0° 6° 0.760(0.030) 0.970(0.038) 0.200(0.008) 2.900(0.114) 3.100(0.122) 0.000(0.000) 0.800(0.031) 1.200(0.047) ` Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 2 BCD Semiconductor Manufacturing Limited 15 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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