Austin AS5C2568C-55L/883C 32k x 8 sram sram memory array Datasheet

SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
32K x 8 SRAM
PIN ASSIGNMENT
(Top View)
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
28-PIN SOJ (DCJ)
28-Pin DIP (C, CW)
FEATURES
Access Times: 12, 15, 20, 25, 35, 45, 55, 70, & 100ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power CMOS double-metal process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\
All inputs and outputs are TTL compatible
VCC
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
A7
A12
A14
NC
VCC
WE\
A13
28
27
26
25
24
23
22
21
20
19
18
17
16
15
4 3 2 1 32 31 30
A6
A5
A4
A3
A2
A1
A0
NC
DQ1
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE\
A10
CE\
DQ8
DQ7
14 15 16 17 18 19 20
28-Pin LCC (EC)
A7
A12
A14
VCC
WE\
•
•
•
•
•
•
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
DQ2
DQ3
VSS
NC
DQ4
DQ5
DQ6
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
•SMD 5962-88662
•SMD 5962-88552
•MIL-STD-883
32-Pin LCC (ECW)
MARKING
• Timing
12ns access1
15ns access1
20ns access
25ns access
35ns access
45ns access
55ns access2
70ns access2
100ns access
-12
-15
-20
-25
-35
-45
-55
-70
-100
• Package(s)3
Ceramic DIP (300 mil)
Ceramic DIP (600 mil)
Ceramic LCC (28 leads)
Ceramic LCC (32 leads)
Ceramic Flat Pack
Ceramic SOJ
C
CW
EC
ECW
F
DCJ
• Operating Temperature Ranges
Military -55oC to +125oC
Industrial -40oC to +85oC
XT
IT
• 2V data retention/low power
L
28-Pin Flat Pack (F)
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
VSS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
4
5
6
7
8
9
10
11
12
26
25
24
23
22
21
20
19
18
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
13 14 15 16 17
GENERAL DESCRIPTION
No. 108
No. 110
No. 204
No. 208
No. 302
No. 500
The Austin Semiconductor SRAM family employs
high-speed, low power CMOS designs using a four-transistor
memory cell. These SRAMs are fabricated using double-layer
metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) and output
enable (OE\) capability. These enhancements can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
The “L” version provides a battery backup/low
voltage data retention mode, offering 2mW maximum power
dissipation at 2 volts. All devices operate from a single +5V
power supply and all inputs and outputs are fully TTL
compatible.
NOTES:
1. -12 available in IT only.
2. Electrical characteristics identical to those provided for the
45ns access devices.
3. Plastic SOJ (DJ Package) is available on the AS5C2568 datasheet.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C2568 / AS5C2568
Rev. 4.5 06/05
1
2
3
4
5
6
7
8
9
10
11
12
13
14
3 2 1 28 27
DQ3
VSS
DQ4
DQ5
DQ6
OPTIONS
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
A0
Vcc
256 x 1024
MEMORY ARRAY
DECODER
GND
A14
I/O0
I/O
DATA
CIRCUIT
COLUMN I/O
I/O7
9A128-1
CE\
CONTROL
CIRCUIT
OE\
WE\
TRUTH TABLE
MODE
STANDBY
READ
READ
WRITE
MT5C2568 / AS5C2568
Rev. 4.5 06/05
OE\
X
L
H
X
CE\
H
L
L
L
WE\
X
H
H
L
DQ
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Input or DQ Relative
to Vss..................................................................-0.5V to Vcc +0.5V
Voltage on Vcc Supply Relative to Vss.......................-1V to +7V
Storage Temperature..............................................-65oC to +150oC
Power Dissipation.......................................................................1W
Short Circuit Output Current.................................................50mA
Lead Temperature (soldering 10 seconds)........................+260oC
Max. Junction Temperature.................................................+175oC
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
Input High (Logic 1) Voltage
CONDITIONS
SYM MIN
MAX UNITS NOTES
V
1
VIH 2.2 VCC+0.5
VIL
-0.5
0.8
V
0V<VIN<VCC
ILI
-10
10
µA
Output(s) disabled
0V<VOUT<VCC
ILo
-10
10
µA
Output High Voltage
IOH = -4.0mA
VOH
2.4
Output Low Voltage
IOL = 8.0mA
VOL
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
CONDITIONS
DESCRIPTION
SYM
-12
-15
0.4
MAX
-20 -25
-35
1,2
V
1
V
1
-45 UNITS NOTES
CE\<VIL; Vcc = MAX
Power Supply
Current: Operating
t
Icc
190 180 170 160 150 150
mA
CE\<VIH; Outputs Open
Vcc = MAX
ISBT
60
50
40
35
35
35
mA
CE\>Vcc-0.2V; Vcc = MAX
VIN<+0.2V or >Vcc-0.2V;
f = 0 Hz, Outputs Open
ISBC
20
20
20
20
20
20
mA
ISBC2
4
4
4
4
4
4
mA
f = MAX = 1/ RC (MIN)
Output Open
TTL
Power Supply
Current: Standby
CMOS
"L" Version Only
3
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
MT5C2568 / AS5C2568
Rev. 4.5 06/05
CONDITIONS
o
TA = 25 C, f = 1MHz
Vcc = 5V
SYM
MAX
UNITS
NOTES
CIN
11
pF
4
CIO
11
pF
4
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC or -40oC to +85oC; VCC = 5.0V +10%)
DESCRIPTION
SYM
-12
-15
-20
MIN MAX MIN MAX MIN MAX
READ CYCLE
READ cycle time
tRC
Address access time
tAA
Chip enable access time
tACE
Output hold from address change
tOH
2
Chip enable to output in Low-Z
tLZCE
2
Chip disable to output in High-Z
tHZCE
Output enable to access time
tAOE
Output enable to output in Low-Z
tLZOE
12
15
12
20
15
12
6
0
8
0
7
10
10
20
20
2
15
20
0
35
ns
ns
ns
3
35
15
0
45
3
3
UNITS NOTES
ns
45
35
15
10
0
45
3
3
-45
MIN MAX
35
25
10
-35
MAX
35
3
3
10
MIN
25
20
3
3
7
-25
MAX
25
20
15
3
MIN
ns
7
ns
6, 7
ns
ns
20
ns
Output disable to output in High-Z tHZOE
WRITE CYCLE
WRITE cycle time
tWC
12
15
20
25
35
45
ns
Chip enable to end of write
tCW
10
12
15
20
30
40
ns
Address valid to end of write
tAW
10
12
15
20
30
40
ns
Address setup time
tAS
0
0
0
0
0
0
ns
Address hold from end of write
tAH
2
0
0
0
0
0
ns
WRITE pulse width
tWP
10
12
15
20
30
40
ns
Data setup time
tDS
8
10
10
15
20
20
ns
tDH
0
0
0
0
0
3
ns
tLZWE
0
0
0
3
3
3
Data hold time
Write disable to output in Low-Z
Write enable to output in High-Z
MT5C2568 / AS5C2568
Rev. 4.5 06/05
tHZWE
7
10
10
15
35
20
6
ns
7
ns
6, 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
+5V
AC TEST CONDITIONS
Input pulse levels....................................................Vss to 3V
Input rise and fall times.....................................................5ns
Input timing reference level.............................................1.5V
Output reference level......................................................1.5V
Output load.................................................See figures 1 & 2
480
4.
5.
6.
480
Q
30 pF
255
Q
All voltages referenced to VSS (GND).
-3V for pulse width < 20ns
ICC is dependent on output loading and cycle rates. The
specified value applies with the outputs unloaded, and
f=
1
Hz.
t
RC (MIN)
This parameter is guaranteed but not tested.
Test conditions as specified with the output loading as
shown in Fig. 1 unless otherwise noted.
t
HZCE, tHZOE and tHZWE are specified with CL = 5pF
as in Fig. 2. Transition is measured ±500mV typical from
steady state voltage, allowing for actual tester RC time
constant.
5 pF
255
Fig. 2
OUTPUT LOAD
EQUIVALENT
Fig. 1
OUTPUT LOAD
EQUIVALENT
NOTES
1.
2.
3.
+5V
At any given temperature and voltage condition, tHZCE
is less than tLZCE, and tHZWE is less than tLZWE.
8. WE\ is HIGH for READ cycle.
9. Device is continuously selected. Chip enables and
output enables are held in their active state.
10. Address valid prior to, or coincident with, latest
occurring chip enable.
11. tRC = Read Cycle Time.
12. Chip enable (CE\) and write enable (WE\) can initiate and
terminate a WRITE cycle.
7.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
CONDITIONS
VCC for Retention Data
SYM
MIN
VDR
2
MAX
UNITS
NOTES
V
CE\ > (VCC-0.2V)
Data Retention Current
VIN > (VCC-0.2V)
or < 0.2V
Chip Deselect to Data
Retention Time
Operation Recovery Time
ICCDR
tCDR
0
tR
tRC
1
mA
--
ns
4
ns
4, 11
LOW Vcc DATA RETENTION WAVEFORM
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
t
t
CDR
CE\
VIH
VIL
123
12345678
12
12345678
12
123
12345678
12
123
12345678
12
123
4.5V
R
V DR
12345678
1234
123
12345678
1234
123
12345678
1234
123
12345678
1234
123
123
123
123
123 DON’T CARE
1234
1234
1234
1234UNDEFINED
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
READ CYCLE NO. 1
8, 9
tRC
ADDRESS
VALID
tAA
tOH
DQ
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2
7, 8, 10, 12
tRC
CE\
tAOE
tHZOE
tLZOE
OE\
tLZCE
tACE
tHZCE
DQ
DATA VALID
tPU
tPD
Icc
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
WRITE CYCLE NO. 1 12
(Chip Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tAS
tCW
CE\
tWP1
WE\
tDS
D
tDH
DATA VAILD
Q
HIGH Z
WRITE CYCLE NO. 2 7, 12
(Write Enabled Controlled)
tWC
ADDRESS
tAW
tAH
tCW
CE\
tAS
tWP1
WE\
tDH
D
DATA VALID
Q
HIGH-Z
NOTE: Output enable (OE\) is inactive (HIGH).
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #108 (Package Designator C)
SMD 5962-88662, Case Outline N
D
S2
A
Q
L
E
S1
b2
e
b
eA
c
SMD SPECIFICATIONS
MIN
MAX
SYMBOL
A
--0.225
b
0.014
0.026
b2
0.045
0.065
c
0.008
0.018
D
--1.485
E
0.240
0.310
eA
0.300 BSC
e
0.100 BSC
L
0.125
0.200
Q
0.015
0.070
S1
0.005
--S2
0.005
--NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #110 (Package Designator CW)
SMD 5962-88662, Case Outline X
D
S2
A
Q
L
E
S1
b2
e
b
eA
c
SYMBOL
A
b
b2
c
D
E
eA
e
L
Q
S1
S2
SMD SPECIFICATIONS
MIN
MAX
--0.232
0.014
0.026
0.045
0.065
0.008
0.018
--1.490
0.500
0.610
0.600 BSC
0.100 BSC
0.125
0.200
0.015
0.060
0.005
--0.005
---
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #204 (Package Designator EC)
SMD 5962-88662, Case Outline U
D1
B2
D2
L1
E3
E
e
E1
E2
D
hx45 o
L
B1
D3
A
A1
SYMBOL
A
A1
B1
B2
D
D1
D2
D3
E
E1
E2
E3
e
h
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.060
0.120
0.050
0.088
0.022
0.028
0.072 REF
0.342
0.358
0.200 BSC
0.100 BSC
--0.358
0.540
0.560
0.400 BSC
0.200 BSC
--0.558
0.050 BSC
0.040 REF
0.045
0.055
0.075
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #208 (Package Designator ECW)
SMD 5962-88662, Case Outline Y
D1
B2
D2
L1
E3
E
e
E1
E2
D
hx45o
L
B1
D3
A
A1
SYMBOL
A
A1
B1
B2
D
D1
D2
D3
E
E1
E2
E3
e
h
L
L1
SMD SPECIFICATIONS
MIN
MAX
0.060
0.120
0.050
0.088
0.022
0.028
0.072 REF
0.442
0.458
0.300 BSC
0.150 BSC
--0.458
0.540
0.560
0.400 BSC
0.200 BSC
--0.558
0.050 BSC
0.040 REF
0.045
0.055
0.075
0.095
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
MECHANICAL DEFINITIONS*
ASI Case #302 (Package Designator F)
SMD 5962-88662, Case Outline T
e
b
D
S
Top View
E
L
A
c
Q
E2
E3
SYMBOL
A
b
c
D
E
E2
E3
e
L
Q
S
SMD SPECIFICATIONS
MIN
MAX
0.090
0.130
0.015
0.019
0.004
0.009
--0.740
0.380
0.420
0.180
--0.030
--0.050 BSC
0.250
0.370
0.026
0.045
0.000
0.045
NOTE: These dimensions are per the SMD. ASI's package dimensional limits may
differ, but they will be within the SMD limits.
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
12
SRAM
Austin Semiconductor, Inc.
MT5C2568
AS5C2568
MECHANICAL DEFINITIONS*
ASI Case #500 (Package Designator DCJ)
A
D
e
A3
B1
E1
b
E
A2
SYMBOL
A
A2
A3
B1
b
D
E
E1
e
ASI SPECIFICATIONS
MIN
MAX
0.116
0.166
0.026
0.036
--0.166
0.030
0.040
0.015
0.019
--0.740
0.380
0.420
0.395
0.410
0.050 BSC
* All measurements are in inches.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
13
SRAM
MT5C2568
AS5C2568
Austin Semiconductor, Inc.
ORDERING INFORMATION
EXAMPLE: MT5C2568CW-25L/XT
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
Package
Type
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
C
CW
MT5C2568
CW
Device Number
EXAMPLE: MT5C2568ECW-15L/IT
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
MT5C2568
Package
Type
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
EC
ECW
-100
L
/*
MT5C2568
ECW
Speed ns Options** Process
Device Number
EXAMPLE: MT5C2568F-55/XT
Speed ns Options** Process
-12
-12
-15
-15
-20
-20
-25
-25
-35
-35
-45
-45
-55
-55
-70
-70
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
-100
L
/*
EXAMPLE: MT5C2568DCJ-70L/IT
Device Number
Package
Type
MT5C2568
F
-12
L
MT5C2568
F
-15
MT5C2568
F
MT5C2568
Device Number
Package
Type
/*
MT5C2568
DCJ
-12
L
L
/*
MT5C2568
DCJ
-15
L
-20
L
/*
MT5C2568
DCJ
-20
L
F
-25
L
/*
MT5C2568
DCJ
-25
L
MT5C2568
F
-35
L
/*
MT5C2568
DCJ
-35
L
MT5C2568
F
-45
L
/*
MT5C2568
DCJ
-45
L
MT5C2568
F
-55
L
/*
MT5C2568
DCJ
-55
L
MT5C2568
F
-70
L
/*
MT5C2568
DCJ
-70
L
MT5C2568
F
-100
L
/*
Speed ns Options** Process
Speed ns Options** Process
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
-40oC to +85oC
XT = Extended Temperature Range
-55oC to +125oC
883C = Full Military Processing
-55oC to +125oC
12ns offered in IT only
**DEFINITION OF OPTIONS
2V Data Retention / Low Power
MT5C2568 / AS5C2568
Rev. 4.5 06/05
L
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
14
SRAM
Austin Semiconductor, Inc.
MT5C2568
AS5C2568
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator C & CW
ASI Package Designator EC & ECW
ASI Part #
MT5C2568C-20/883C
MT5C2568C-25/883C
MT5C2568C-35/883C
MT5C2568C-45/883C
MT5C2568C-55/883C
MT5C2568C-70/883C
SMD Part #
5962-8866207NX
5962-8866206NX
5962-8866205NX
5962-8866204NX
5962-8866203NX
5962-8866202NX
ASI Part #
MT5C2568EC-20/883C
MT5C2568EC-25/883C
MT5C2568EC-35/883C
MT5C2568EC-45/883C
MT5C2568EC-55/883C
MT5C2568EC-70/883C
SMD Part #
5962-8866207UX
5962-8866206UX
5962-8866205UX
5962-8866204UX
5962-8866203UX
5962-8866202UX
MT5C2568CW-20/883C
MT5C2568CW-25/883C
MT5C2568CW-35/883C
MT5C2568CW-45/883C
MT5C2568CW-55/883C
MT5C2568CW-70/883C
MT5C2568CW-100/883C
5962-8866207XX
5962-8866206XX
5962-8866205XX
5962-8866204XX
5962-8866203XX
5962-8866202XX
5962-8866201XX
MT5C2568ECW-20/883C
MT5C2568ECW-25/883C
MT5C2568ECW-35/883C
MT5C2568ECW-45/883C
MT5C2568ECW-55/883C
MT5C2568ECW-70/883C
MT5C2568ECW-100/883C
5962-8866207YX
5962-8866206YX
5962-8866205YX
5962-8866204YX
5962-8866203YX
5962-8866202YX
5962-8866201YX
AS5C2568C-12L/883C
AS5C2568C-15L/883C
AS5C2568C-17L/883C
AS5C2568C-20L/883C
AS5C2568C-25L/883C
AS5C2568C-35L/883C
AS5C2568C-45L/883C
AS5C2568C-55L/883C
AS5C2568C-70L/883C
5962-8855213UA
5962-8855212UA
5962-8855211UA
5962-8855210UA
5962-8855206UA
5962-8855205UA
5962-8855209UA
5962-8855208UA
5962-8855207UA
AS5C2568EC-12L/883C
AS5C2568EC-15L/883C
AS5C2568EC-17L/883C
AS5C2568EC-20L/883C
AS5C2568EC-25L/883C
AS5C2568EC-35L/883C
AS5C2568EC-45L/883C
AS5C2568EC-55L/883C
AS5C2568EC-70L/883C
5962-8855213MA
5962-8855212MA
5962-8855211MA
5962-8855210MA
5962-8855206MA
5962-8855205MA
5962-8855209MA
5962-8855208MA
5962-8855207MA
AS5C2568CW-12L/883C
AS5C2568CW-15L/883C
AS5C2568CW-17L/883C
AS5C2568CW-20L/883C
AS5C2568CW-25L/883C
AS5C2568CW-35L/883C
AS5C2568CW-45L/883C
AS5C2568CW-55L/883C
AS5C2568CW-70L/883C
5962-8855213XA
5962-8855212XA
5962-8855211XA
5962-8855210XA
5962-8855206XA
5962-8855205XA
5962-8855209XA
5962-8855208XA
5962-8855207XA
AS5C2568ECW-12L/883C
AS5C2568ECW-15L/883C
AS5C2568ECW-17L/883C
AS5C2568ECW-20L/883C
AS5C2568ECW-25L/883C
AS5C2568ECW-35L/883C
AS5C2568ECW-45L/883C
AS5C2568ECW-55L/883C
AS5C2568ECW-70L/883C
5962-8855213YA
5962-8855212YA
5962-8855211YA
5962-8855210YA
5962-8855206YA
5962-8855205YA
5962-8855209YA
5962-8855208YA
5962-8855207YA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
SRAM
Austin Semiconductor, Inc.
MT5C2568
AS5C2568
ASI TO DSCC PART NUMBER
CROSS REFERENCE*
ASI Package Designator F
ASI Part #
MT5C2568F-20/883C
MT5C2568F-25/883C
MT5C2568F-35/883C
MT5C2568F-45/883C
MT5C2568F-55/883C
MT5C2568F-70/883C
MT5C2568F-100/883C
SMD Part #
5962-8866207TX
5962-8866206TX
5962-8866205TX
5962-8866204TX
5962-8866203TX
5962-8866202TX
5962-8866201TX
AS5C2568F-12L/883C
AS5C2568F-15L/883C
AS5C2568F-17L/883C
AS5C2568F-20L/883C
AS5C2568F-25L/883C
AS5C2568F-35L/883C
AS5C2568F-45L/883C
AS5C2568F-55L/883C
AS5C2568F-70L/883C
5962-8855213TA
5962-8855212TA
5962-8855211TA
5962-8855210TA
5962-8855206TA
5962-8855205TA
5962-8855209TA
5962-8855208TA
5962-8855207TA
* ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
16
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