Austin AS5SP512K18DQ-30ET Plastic encapsulated microcircuit 9mb, 512k x 18, synchronous sram pipeline burst, single cycle deselect Datasheet

COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
Symbol
tCYC
tCD
tOE
200Mhz
5.0
3.0
3.0
166Mhz
6.0
3.5
3.5
133Mhz
7.5
4.0
4.0
CLK
CE1\
I/O Gating and Control
CE3\
CONTROL
BLOCK
GW\
ADV
ADSC\
ADSP\
MODE
A0-Ax
BURST CNTL.
Address
Registers
Row
Decode
Memory Array
x18
SBP
❑ Synchronous Pipeline
Burst
❋ Two (2) cycle load
❋ One (1) cycle
de-select
❋ One (1) cycle latency
on Mode change
Output
Register
Output
Driver
81
82
84
83
85
87
86
89
88
91
90
92
93
95
94
96
NC
NC
6
75
7
74
DQb
DQb
8
73
9
72
VSSQ
10
71
VDDQ
11
70
DQb
12
69
DQb
NC
13
68
VDD
15
NC
VSS
DQb
16
65
17
64
18
63
DQb
19
62
VDDQ
VSSQ
20
61
21
60
DQb
22
59
DQb
DQPb
23
58
24
57
VSSQ
DQa
DQa
NC
NC
25
56
NC
VSSQ
VDDQ
26
55
27
54
NC
NC
NC
28
53
29
52
VSSQ
VDDQ
NC
NC
30
51
NC
14
67
DQa
DQa
VSSQ
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
50
49
48
47
46
45
44
43
42
41
66
NC
DQPa
VDD
NC*
A
A
A
A
A
A
A
A
40
39
38
37
36
35
34
33
SSRAM [SPB]
VDDQ
VSSQ
ASI’s AS5SP512K18DQ includes advanced control options
including Global Write, Byte Write as well as an Asynchronous
Output enable. Burst Cycle controls are handled by three (3)
input pins, ADV, ADSP\ and ADSC\. Burst operation can be
initiated with either the Address Status Processor (ADSP\) or
Address Status Cache controller (ADSC\) inputs. Subsequent
burst addresses are generated internally in the system’s burst
sequence control block and are controlled by Address Advance
(ADV) control input.
DQx, DQPx
Input
Register
Column
Decode
AS5SP512K18DQ
Revision 1.0 04/04/04
76
ASI’s AS5SP512K18DQ is a 9.0Mb High Performance
Synchronous Pipeline Burst SRAM, available in multiple
temperature screening levels, fabricated using High Performance
CMOS technology and is organized as a 512K x 18. It integrates
address and control registers, a two (2) bit burst address counter
supporting four (4) double-word transfers. Writes are internally
self-timed and synchronous to the rising edge of clock.
ZZ
BWx\
77
5
General Description
OE\
BWE\
78
4
A
NC
NC
Units
ns
ns
ns
Block Diagram
CE2
79
3
NC*
NC*
VSS
Fast Access Times
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
80
2
31
•
•
•
•
•
•
•
Synchronous Operation in relation to the input Clock
2 Stage Registers resulting in Pipeline operation
On chip address counter (base +3) for Burst operations
Self-Timed Write Cycles
On-Chip Address and Control Registers
Byte Write support
Global Write support
On-Chip low power mode [powerdown] via ZZ pin
Interleaved or Linear Burst support via Mode pin
Three Chip Enables for ease of depth expansion without Data
Contention.
Two Cycle load, Single Cycle Deselect
Asynchronous Output Enable (OE\)
Three Pin Burst Control (ADSP\, ADSC\, ADV\)
3.3V Core Power Supply
3.3V/2.5V IO Power Supply
JEDEC Standard 100 pin TQFP Package, MS026-D/BHA
Available in Industrial, Enhanced, and Mil-Temperature
Operating Ranges
1
NC
NC
VDDQ
VSSQ
MODE
A
A
A
A
A1
A0
•
•
•
•
•
•
•
•
•
•
NC
32
Features
97
100
Pipeline Burst, Single Cycle Deselect
98
9Mb, 512K x 18, Synchronous SRAM
99
A
A
CE1\
CE2
NC
NC
BWb\
BWa\
CE3\
VDD
VSS
CLK
GW\
BWE\
OE\
ADSC\
ADSP\
ADV\
A
A
Plastic Encapsulated Microcircuit
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1
COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
Pin Description/Assignment Table
Signal Name
Clock
Symbol
CLK
Type
Input
Pin
Address
A0, A1
Input
Address
A
Input(s)
Chip Enable
Chip Enable
Global Write Enable
Byte Enables
CE1\, CE3\
CE2
GW\
BWa\, BWb\
Input
Input
Input
Input
Byte Write Enable
Output Enable
Address Strobe Controller
BWE\
OE\
ADSC\
Input
Input
Input
Address Strobe from Processor
ADSP\
Input
Address Advance
ADV
Input
Power-Down
ZZ
Input
Data Parity Input/Outputs
DQPa, DQPb
Input/
Output
Data Input/Outputs
DQa, DQb, DQc Input/
DQd
Output
Burst Mode
Power Supply [Core]
Ground [Core]
Power Supply I/O
MODE
VDD
VSS
VDDQ
Input
Supply
Supply
Supply
I/O Ground
VSSQ
Supply
No Connection(s)
NC
NA
Description
This input registers the address, data, enables, Global and Byte
writes as well as the burst control functions
37, 36
Low order, Synchronous Address Inputs and Burst counter
address inputs
35, 34, 33, 32, 31, 100, Synchronous Address Inputs
99, 82, 81, 44, 45, 46,
47, 48, 49, 50, 43,83
98, 92
Active Low True Chip Enables
97
Active High True Chip Enable
88
Active Low True Global Write enable. Write to all bits
93, 94
Active Low True Byte Write enables. Write to byte segments
89
87
86
85
Active Low True Byte Write Function enable
Active Low True Asynchronous Output enable
Address Strobe from Controller. When asserted LOW, Address is
captured in the address registers and A0-A1 are loaded into the Burst
When ADSP\ and ADSC are both asserted, only ADSP is recognized
84
Synchronous Address Strobe from Processor. When asserted LOW,
Address is captured in the Address registers, A0-A1 is registered in
the burst counter. When both ADSP\ and ADSC\ or both asserted,
only ADSP\ is recognized. ADSP\ is ignored when CE1\ is HIGH
83
Advance input Address. When asserted HIGH, address in burst
counter is incremented.
64
Asynchronous, non-time critical Power-down Input control. Places
the chip into an ultra low power mode, with data preserved.
74,24
Bidirectional I/O Parity lines. As inputs they reach the memory
array via an input register, the address stored in the register on the
rising edge of clock. As and output, the line delivers the valid data
stored in the array via an output register and output driver. The data
delieverd is from the previous clock period of the READ cycle.
58, 59, 62, 63, 68, 69, Bidirectional I/O Data lines. As inputs they reach the memory
72, 73, 8, 9, 12, 13, 18, array via an input register, the address stored in the register on the
19, 22, 23
rising edge of clock. As and output, the line delivers the valid data
stored in the array via an output register and output driver. The data
delieverd is from the previous clock period of the READ cycle.
31
Interleaved or Linear Burst mode control
91, 15, 41, 65
Core Power Supply
90, 17, 40, 67
Core Power Supply Ground
4, 11, 20, 27, 54, 61, Isolated Input/Output Buffer Supply
70, 77
5, 10, 21, 26, 55, 60, Isolated Input/Output Buffer Ground
71, 76
1, 2, 3, 6, 7, 14, 16, 25, No connections to internal silicon
28, 29, 30, 38, 39, 42
51, 52, 53, 56, 57, 66,
75, 78, 79, 95, 96
Logic Block Diagram
A0, A1, Ax
ADDRESS
REGISTER
MODE
2 A0, A1
ADV\
CLK
Burst
CounterQ1
and
CLR
Logic Q0
ADSC\
ADSP\
BWb\
Byte Write
Register
DQb, DQPb
Byte Write
Driver
DQb, DQPb
Memory
Array
Sense
Amps
Output
Registers
BWa\
BWE\
GW\
CE1\
CE2
CE3\
OE\
Byte Write
Register
DQa, DQPa
Enable
Register
DQx,
DQPx
Byte Write
Driver
DQa, DQPa
Input
Registers
Pipeline
Enable
Sleep
Control
ZZ
AS5SP512K18DQ
Revision 1.0 04/04/04
Output
Buffers
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COTS PEM
Austin Semiconductor, Inc.
AS5SP512K18DQ
SSRAM
cycle READS are supported. Once the READ operation has been
completed and deselected by use of the Chip Enable(s) and either
Austin Semiconductor’s AS5SP512K18DQ Synchronous SRAM ADSP\ or ADSC\, its outputs will tri-state immediately.
is manufactured to support today’s High Performance platforms
utilizing the Industries leading Processor elements including those A Single ADSP\ controlled WRITE operation is initiated when
of Intel and Motorola.
The AS5SP512K18DQ supports both of the following conditions are satisfied at the time of Clock
Synchronous SRAM READ and WRITE operations as well as (CLK) HIGH: [1] ADSP\ is asserted LOW, and [2] Chip
Synchronous Burst READ/WRITE operations. All inputs with Enable(s) are asserted ACTIVE. The address presented to the
the exception of OE\, MODE and ZZ are synchronous in nature address bus is registered and loaded on CLK HIGH, then
and sampled and registered on the rising edge of the devices input presented to the core array. The WRITE controls Global Write,
clock (CLK). The type, start and the duration of Burst Mode and Byte Write Enable (GW\, BWE\) as well as the individual
operations is controlled by MODE, ADSC\, ADSP\ and ADV as Byte Writes (BWa\, BWb\, BWc\, and BWd\) and ADV\ are
well as the Chip Enable pins CE1\, CE2, and CE3\. All ignored on the first machine cycle. ADSP\ triggered WRITE
synchronous accesses including the Burst accesses are enabled via accesses require two (2) machine cycles to complete. If Global
the use of the multiple enable pins and wait state insertion is Write is asserted LOW on the second Clock (CLK) rise, the data
supported and controlled via the use of the Advance control presented to the array via the Data bus will be written into the
array at the corresponding address location specified by the
(ADV).
Address bus. If GW\ is HIGH (inactive) then BWE\ and one or
The ASI AS5SP512K18DQ supports both Interleaved as well as more of the Byte Write controls (BWa\, BWb\, BWc\ and BWd\)
Linear Burst modes therefore making it an architectural fit for controls the write operation. All WRITES that are initiated in this
either the Intel or Motorola CISC processor elements available on device are internally self timed.
the Market today.
A Single ADSC\ controlled WRITE operation is initiated when
The AS5SP512K18DQ supports Byte WRITE operations and the following conditions are satisfied: [1] ADSC\ is asserted
enters this functional mode with the Byte Write Enable (BWE\) LOW, [2] ADSP\ is de-asserted (HIGH), [3] Chip Enable(s) are
and the Byte Write Select pin(s) (BWa\, BWb\, BWc\, BWd\). asserted (TRUE or Active), and [4] the appropriate combination
Global Writes are supported via the Global Write Enable (GW\) of the WRITE inputs (GW\, BWE\, BWx\) are asserted
and Global Write Enable will override the Byte Write inputs and (ACTIVE). Thus completing the WRITE to the desired Byte(s) or
the complete data-path. ADSC\ triggered WRITE accesses
will perform a Write to all Data I/Os.
require a single clock (CLK) machine cycle to complete. The
The AS5SP512K18DQ provides ease of producing very dense address presented to the input Address bus pins at time of clock
arrays via the multiple Chip Enable input pins and Tri-state HIGH will be the location that the WRITE occurs. The ADV pin
is ignored during this cycle, and the data WRITTEN to the array
outputs.
will either be a BYTE WRITE or a GLOBAL WRITE depending
on the use of the WRITE control functions GW\ and BWE\ as
Single Cycle Access Operations
well as the individual BYTE CONTOLS (BWx\).
A Single READ operation is initiated when all of the following
conditions are satisfied at the time of Clock (CLK) HIGH: [1] Deep Power-Down Mode (SLEEP)
ADSP\ pr ADSC\ is asserted LOW, [2] Chip Enables are all
asserted active, and [3] the WRITE signals (GW\, BWE\) are in The AS5SP512K18DQ has a Deep Power-Down mode and is
their FALSE state (HIGH). ADSP\ is ignored if CE1\ is HIGH. controlled by the ZZ pin. The ZZ pin is an Asynchronous input
The address presented to the Address inputs is stored within the and asserting this pin places the SSRAM in a deep power-down
Address Registers and Address Counter/Advancement Logic and mode (SLEEP). White in this mode, Data integrity is guaranteed.
then passed or presented to the array core. The corresponding For the device to be placed successfully into this operational
data of the addressed location is propagated to the Output mode the device must be deselected and the Chip Enables, ADSP\
Registers and passed to the data bus on the next rising clock via and ADSC\ remain inactive for the duration of tZZREC after the
the Output Buffers. The time at which the data is presented to the ZZ input returns LOW. Use of this deep power-down mode
Data bus is as specified by either the Clock to Data valid conserves power and is very useful in multiple memory page
specification or the Output Enable to Data Valid spec for the designs where the mode recovery time can be hidden.
device speed grade chosen. The only exception occurs when the
device is recovering from a deselected to select state where its
outputs are tristated in the first machine cycle and controlled by
its Output Enable (OE\) on following cycle. Consecutive single
Functional Description
AS5SP512K18DQ
Revision 1.0 04/04/04
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For Additional Products and Information visit out Web site at www.austinsemiconductor.com
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COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
Synchronous Truth Tables
CE1\
H
L
L
L
L
L
L
L
X
H
X
H
X
H
X
H
CE2
X
L
X
L
X
H
H
H
X
X
X
X
X
X
X
X
CE3\
X
X
H
X
H
L
L
L
X
X
X
X
X
X
X
X
ADSP\
X
L
L
X
X
L
H
H
H
X
H
X
H
X
H
X
ADSC\
L
X
X
L
L
X
L
L
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
L
L
L
L
H
H
H
H
WT / RD
X
X
X
X
X
X
WT
RD
RD
RD
WT
WT
RD
RD
WT
WT
CLK
Address Accessed
NA
NA
NA
NA
NA
External Address
External Address
External Address
Next Address
Next Address
Next Address
Next Address
Current Address
Current Address
Current Address
Current Address
Operation
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst, READ
Begin Burst, WRITE
Begin Burst, READ
Continue Burst, READ
Continue Burst, READ
Continue Burst, WRITE
Continue Burst, WRITE
Suspend Burst, READ
Suspend Burst, READ
Suspend Burst, WRITE
Suspend Burst, WRITE
Notes:
1. X = Don’t Care
2. WT= WRITE operation in WRITE TABLE, RD= READ operation in WRITE TABLE
Capacitance
Burst Sequence Tables
Burst Control
Pin [MODE]
First Address
State
HIGH
Case 1
A1
A0
0
0
1
1
Fourth Address
Burst Control
Pin [MODE]
First Address
State
LOW
Interleaved Burst
Case 2
A1
A0
0
0
1
0
0
1
1
1
Case 1
A1
A0
0
0
1
1
Fourth Address
0
1
0
1
Linear Burst
Case 2
A1
A0
0
1
1
0
Case 3
A1
Case 4
A0
1
0
1
0
1
1
0
0
A1
0
1
0
1
1
1
0
0
Case 3
A1
A0
1
0
1
0
BW\
H
L
L
L
L
L
X
A1
Max.
5.0
5.0
5.0
Units
pF
pF
pF
0
1
0
1
A0
1
0
1
0
1
1
0
0
1
0
0
1
BWd\
X
H
H
H
L
L
X
Operation
READ
READ
WRITE Byte [A]
WRITE Byte [B]
WRITE Byte [C], [D]
WRITE ALL Bytes
WRITE ALL Bytes
1
0
1
0
Asynchronous Truth Table
BWa\
X
H
L
H
H
L
X
BWb\
X
H
H
L
H
L
X
BWc\
X
H
H
H
L
L
X
Operation
Power-Down (SLEEP)
READ
Parameter
Voltage on VDD Pin
Voltage on VDDQ Pins
Voltage on Input Pins
Voltage on I/O Pins
Power Dissipation
Storage Temperature
Operating Temperatures
[Screening Levels]
Symbol
VDD
VDDQ
VIN
VIO
PD
tSTG
/CT
/IT
/ET
/XT
Min.
Max.
-0.3
4.6
VDD
VDD+0.3
V
-0.3
VDDQ+0.3
V
-65
150
70
-40
85
-40
105
-55
125
I/O Status
High-Z
DQ
High-Z
Din, High-Z
High-Z
V
-0.3
0
OE\
X
L
H
X
X
AC Test Loads
Units
V
1.6
ZZ
H
L
L
L
L
WRITE
De-Selected
Absolute Maximum Ratings*
Output
Rt = 50 ohm
Zo=50 ohm
W
C
Diagram [A]
ο
30 pF
ο
C
Vt= Termination Voltage
Rt= Termination Resistor
ο
C
ο
C
Vt= 1.50v for 3.3v VDDQ
Vt= 1.25v for 2.5v VDDQ
ο
C
R= 317 [email protected]
R= 1667 [email protected]
*Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum conditions for any duration or segment of time may affect
device reliability.
AS5SP512K18DQ
Revision 1.0 04/04/04
Symbol
CI
CIO
CCLK
Case 4
A0
Write Table
GW\
H
H
H
H
H
H
L
Parameter
Input Capacitance
Input/Output Capacitance
Clock Input Capacitance
Output
3.3/2.5v
5 pF
R= 351 [email protected]
R= 1538 [email protected]
Diagram [B]
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COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
DC Electrical Characteristics (VDD=3.3v -5%/+10%,
TA= Min. and Max temperatures of Screening level chosen)
Symbol
Parameter
Power Supply Voltage
I/O Supply Voltage
Output High Voltage
VDD
VDDQ
VoH
Test Conditions
3.3v
2.5v
3.3v
2.5v
3.3v
2.5v
3.3v
2.5v
VDD=Min., IOH=-4mA
VDD=Min., IOH=-1mA
VoL
Output Low Voltage
VDD=Min., IOL=8mA
VDD=Min., IOL=1mA
VIH
Input High Voltage
VIL
Input Low Voltage
IIL
IZZL
IOL
IDD
Input Leakage (except ZZ)
Input Leakage, ZZ pin
Output Leakage
Operating Current
VDD=Max., VIN=VSS to VDD
Output Disabled, VOUT=VSSQ to VDDQ
Automatic CE. Power-down
Current -TTL inputs
Automatic CE. Power-down
Current - CMOS Inputs
Automatic CE. Power-down
Current -TTL inputs
Automatic CE. Power-down
Current - CMOS Inputs
ISB4
ISB3
Max
3.630
VDD
0.4
0.4
VDD+0.3
VDD+0.3
0.8
0.7
5
30
5
250
220
185
Units
V
V
V
V
V
V
V
V
V
V
uA
uA
uA
mA
mA
mA
50
50
50
30
mA
mA
mA
mA
50
mA
40
40
40
mA
mA
mA
Notes
1
1,5
1,4
1,4
1,4
1,4
1,2
1,2
1,2
1,2
3
3
Max. VDD, Device De-Selected,
5.0ns Cycle, 200 Mhz
6.0ns Cycle, 166 Mhz
7.5ns Cycle, 133 Mhz
VIN>/=VIH or VIN</=VIL
f=fMAX=1/tCYC
ISB2
2
1.7
-0.3
-0.3
-5
-30
-5
5.0ns Cycle, 200 Mhz
6.0ns Cycle, 166 Mhz
7.5ns Cycle, 133 Mhz
VDD=Max., f=Max.,
IOH=0mA
ISB1
Min
3.135
2.375
2.4
2
Max. VDD, Device De-Selected, VIN</=0.3v or VIN>/=VDDQ-0.3v
f=fMAX=1/tCYC
Max. VDD, Device De-Selected, VIN>/=VIH or VIN </= VIL, f=0
Max. VDD, Device De-Selected, or
VIN</=0.3v or VIN >/=VDDQ-0.3v,
f-Max=1/tCYC
5.0ns Cycle, 200 Mhz
6.0ns Cycle, 166 Mhz
7.5ns Cycle, 133 Mhz
Thermal Resistance
Symbol
θ JA
θ JC
Description
Thermal Resistance
(Junction to Ambient)
Conditions
Typical
1-Layer
Test Conditions follow standard test methods and
Thermal Resistance
procedures for measuring thermal impedance, as
(Junction to Top of Case, Top) per EIA/JESD51
Units
Notes
25
0
C/W
6
9
0
C/W
6
Notes:
[1]
[2]
[3]
[4]
[5]
[6]
AS5SP512K18DQ
Revision 1.0 04/04/04
All Voltages referenced to VSS (Logic Ground)
Overshoot: VIH < +4.6V for t<tKC/2 for I<20mA
Undershoot: VIL >-0.7V for t<tKC/2 for I<20mA
Power-up: VIH <+3.6V and VDD<3.135V for t<200ms
MODE and ZZ pins have internal pull-up resistors, and input leakage +/> +10uA
The load used for VOH, VOL testing is shown in Figure-2 for 3.3v and 2.5V supplies.
AC load current is higher than stated values, AC I/O curves can be made available upon request
VDDQ should never exceed VDD, VDD and VDDQ can be connected together
This parameter is sampled
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COTS PEM
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AS5SP512K18DQ
SSRAM
AC Switching Characteristics (VDD=3.3v -5%/+10%,
TA= Min. and Max temperatures of Screening level chosen)
Parameter
Clock (CLK) Cycle Time
Clock (CLK) High Time
Clock (CLK) Low Time
Clock Access Time
Clock (CLK) High to Output Low-Z
Clock High to Output High-Z
Output Enable to Data Valid
Output Hold from Clock High
Output Enable Low to Output Low-Z
Output Enable High to Output High-Z
Address Set-up to CLK High
Address Hold from CLK High
Address Status Set-up to CLK High
Address Status Hold from CLK High
Address Advance Set-up to CLK High
Address Advance Hold from CLK High
Chip Enable Set-up to CLK High (CEx\, CE2)
Chip Enable Hold from CLK High (CEx\, CE2)
Data Set-up to CLK High
Data Hold from CLK High
Write Set-up to CLK High (GW\, BWE\, BWx\)
Write Hold from CLK High (GW\, BWE\, BWX\)
ZZ High to Power Down
ZZ Low to Power Up
-30 [200Mhz]
Min.
Max.
5.00
2.00
2.00
3.00
1.25
1.25
3.00
3.00
1.25
0.00
3.00
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
1.40
0.40
2
2
Symbol
tCYC
tCH
tCL
tCD
tCLZ
tCHZ
tOE
tOH
tOELZ
tOEHZ
tAS
tAH
tASS
tASH
tADVS
tADVH
tCES
tCEH
tDS
tDH
tWES
tWEH
tPD
tPU
-35 [166Mhz]
Min.
Max.
6.00
2.20
2.20
3.50
1.25
1.25
3.50
3.50
1.25
0.00
3.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
2
2
-40 [133Mhz]
Min.
Max.
7.50
2.50
2.50
4.00
1.25
1.25
3.50
4.00
1.25
0.00
3.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
1.50
0.50
2
2
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
cycles
cycles
Notes
1
1
2
2,3,4,5
2,3,4,5
6
2,3,4,5
2,3,4,5
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
7,8
Notes to Switching Specifications:
1.
2.
3.
4.
5.
6.
7.
8.
AS5SP512K18DQ
Revision 1.0 04/04/04
Measured as HIGH when above VIH and Low when below VIL
This parameter is measured with the output loading shown in AC Test Loads
This parameter is sampled
Transition is measured +500mV from steady state voltage
Critical specification(s) when Design Considerations are being reviewed/analyized for Bus Contentention
OE\ is a Don't Care when a Byte or Global Write is sampled LOW
A READ cycle is defined by Byte or Global Writes sampled LOW and ADSP\ is sampled HIGH for the required SET-UP and HOLD times
This is a Synchronous device. All addresses must meet the specified SET-UP and HOLD times for all rising edges of CLK when either
ADSP\ or ADSC\ is sampled LOW while the device is enabled. All other synchronous inputs must meet the SET-UP and HOLD times
with stable logic levels for all rising edges of clock (CLK) during device operation (enabled). Chip Enable (Cex\, CE2) must be valid
at each rising edge of clock (CLK) when either ADSP\ or ADSC\ is LOW to remain enabled.
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
6
COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
AC Switching Waveforms
Write Cycle Timing
Single Write
Burst Write
tCYC
Pipelined Write
tCH
CLK
tASS
tASH
tCL
ADSP\
ADSP\ Ignored with CE1\ inactive
ADSC\
tASS
tASH
ADV\
tADVS
tADVH
A1
Ax
ADV\ Must be Inactive for ADSP\ Write
A3
A2
tAS
tAH
GW\
tWES
tWEH
tWEH
tWES
BWE\, BWx\
tCES
tCEH
CE1\ Masks ADSP\
CE1\
CE2
CE3\
OE\
tDS
tDH
DQx,DQPx
W1
W2a
W2b
W2c
W2d
W3
DON'T CARE
UNDEFINED
AS5SP512K18DQ
Revision 1.0 04/04/04
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
7
COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
AC Switching Waveforms
Read Cycle Timing
Single Read
Burst Read
tCYC
tCH
Pipelined Read
tCL
CLK
tASS
tASH
ADSP\ Ignored with CE1\ Inactive
ADSP\
ADSC\ Initiated Read
ADSC\
Suspend Burst
ADV\
tADVS
tADVH
Ax
A2
A1
tAS
A3
tAH
GW\
tWES
tWEH
BWE\, BWx\
tCES
CE1\ Masks ADSP\
tCEH
CE1\
Unselected with CE2
CE2
CE3\
OE\
tOEHZ
tOE
tCD
DQx,DQPx
R1
tOH
R2a
R2b
R2c
R2d
R3a
DON'T CARE
UNDEFINED
AS5SP512K18DQ
Revision 1.0 04/04/04
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
8
COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
AC Switching Waveforms
Read/Write Cycle Timing
Pipelined Read
Burst Read
tCYC
tCH
tCL
CLK
tASS
tASH
ADSP\
ADSC\
ADV\
tADVS
tADVH
tAS
Ax
A1R
A2W
A3W
A4R
A5R
tAH
GW\
tWES
tWEH
BWE\, BWx\
tCES
tCEH
tCES
tCEH
CE1\
CE2
CE3\
OE\
tOEHZ
tOE
DQx,DQPx
DON'T CARE
A1O
tOH
A2I
A4O
[a]
A3I
A4O
[b]
A4O
[c]
A4O
[d]
tOELZ
tCD
UNDEFINED
AS5SP512K18DQ
Revision 1.0 04/04/04
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
9
COTS PEM
AS5SP512K18DQ
SSRAM
Austin Semiconductor, Inc.
Power Down (SNOOZE MODE)
Ordering Information
Power Down or Snooze is a Power conservation mode which
when building large/very dense arrays, using multiple devices in a
multi-banked or paged array, can greatly reduce the Operating
current requirements of your total memory array solution.
The device is placed in this mode via the use of the ZZ pin, an
asynchronous control pin which when asserted, places the array
into the lower power or Power Down mode. Awakening the array
or leaving the Power Down (SNOOZE) mode is done so by deasserting the ZZ pin .
ASI Part Number
Configuration
tCD
(ns)
Clock
(Mhz)
3.0
3.5
4.0
200
166
133
3.0
3.5
4.0
200
166
133
3.5
4.0
166
133
Industrial Operating Range (-400C to +850C)
AS5SP512K18DQ-30IT
AS5SP512K18DQ-35IT
AS5SP512K18DQ-40IT
512Kx18, 3.3vCore/3.3,2.5vIO
512Kx18, 3.3vCore/3.3,2.5vIO
512Kx18, 3.3vCore/3.3,2.5vIO
Enhanced Operating Range (-400C to +1050C)
AS5SP512K18DQ-30ET
AS5SP512K18DQ-35ET
AS5SP512K18DQ-40ET
512Kx18, 3.3vCore/3.3,2.5vIO
512Kx18, 3.3vCore/3.3,2.5vIO
512Kx18, 3.3vCore/3.3,2.5vIO
Extended Operating Range (-550C to +1250C)
AS5SP512K18DQ-35XT
AS5SP512K18DQ-40XT
512Kx18, 3.3vCore/3.3,2.5vIO
512Kx18, 3.3vCore/3.3,2.5vIO
While in the Power Down or Snooze mode, Data integrity is
guaranteed. Accesses pending when the device entered the mode
are not considered valid nor is the completion of the operation
guaranteed. The device must be de-selected prior to entering the
Power Down mode, all Chip Enables, ADSP\ and ADSC\ must
remain inactive for the duration of ZZ recovery time (tZZREC).
ZZ Mode Electrical Characteristics
Parameter
Power Down (SNOOZE) Mode
ZZ Active (Signal HIGH) to Power Down
ZZ Inactive (Signal Low) to Power Up
Symbol
Test Conditon
IDDzz
ZZ >/- VDD - 0.2V
ZZ >/- VDD - 0.2V
tZZS
tZZR
ZZ </- 0.2V
ZZ Mode Timing Diagram
Min.
Max.
35
2 tCYC
2 tCYC
Units
mA
ns
ns
Mechanical Diagram
16.00 +/- 0.20mm
1.40 +/- 0.05mm
14.00 +/- 0.10mm
1.60mm Max.
0.30 +/- 0.08
CLK
ADSC\
20.00 +/- 0.10mm
22.00 +/- 0.20mm
ADSP\
100 Pin TQFP
14mm x 20mm
JEDEC MS026-D/BHA
0.65mm TYP.
CEx\
CE2
See Detail A
ZZ
tZZS
IDD
tZZREC
1.00mm TYP.
0.10 +0.10/-0.05mm
Detail A
IDDzz
0.10
Standoff
0.15 MAX
0.05 MIN
AS5SP512K18DQ
Revision 1.0 04/04/04
Seating Plane
12 +/- 1
0.60 +/- 0.15mm
Austin Semiconductor, Inc. reserves the right to change products or modify product specifications with appropriate notification
For Additional Products and Information visit out Web site at www.austinsemiconductor.com
10
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