Formosa MS Advanced Schottky Barrier Diodes ASD501V-N Surface mount small signal type Features Extermely low VF 0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ. Extermely thin package R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) Low stored charge Majority carrier conduction 0.035 (0.9) 0.028 (0.7) Mechanical data SOD-323 Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) MAX. UNIT Repetitive peak reverse voltage PARAMETER CONDITIONS VRM 45 V Continuous reverse voltage VR 40 V Mean rectifying current IO 100 mA Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Capacitance between terminals f=1MHz and applied 10VDC reverse voltage Storage temperature Symbol IFSM TSTG TYP. 1000 CT TJ Operating temperature MIN. mA 20 -40 -40 pF +125 o C +125 o C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) MAX. UNIT Forward voltage PARAMETER IF = 100 mA DC CONDITIONS Symbol VF MIN. TYP. 0.55 V Reverse current VR = 10 V DC IR 30 uA RATING AND CHARACTERISTIC CURVES (ASD501V-N) 10m 1000 O REVERSE CURRENT : (A) 100 10 1 0 0.1 0.2 C 25 O O 1m O 75 C 100 10 O 25 C 1 25 C C O 75 5C O 12 FORWARD CURRENT : (mA) 125 C 0.3 0.4 0.5 0.1 0 0.6 10 FORWARD VOLTAGE : (V) CAPACITANCE BETWEEN TERMINALS : (pF) Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 AMBIENT TEMPERATURE : Ta Fig. 4 Derating curve (mounting on glass epoxy PCBs) 40 Fig. 2 Reverse characteristics Fig. 1 Forward characteristics 100 20 REVERSE VOLTAGE : (V) 10 1 0 5 101 52 02 53 03 5 REVERSE VOLTAGE : V Fig. 3 Capacitance between terminals characteristics