TVV010 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI TVV010 is Designed for .112x45° A B D FEATURES: S • • • Omnigold™ Metalization System ØC S G D H I J MAXIMUM RATINGS F IC 10 A VCB 60 V VCE 35 V E PDISS 140 W @ TC = 25 OC TJ -65 OC to +200 OC O O TSTG -65 C to +150 C θ JC 2.2 OC/W CHARACTERISTICS SYMBOL G #8-32 UNC-2A MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 .750 / 19.05 J ORDER CODE: ASI10656 O TC = 25 C NONETEST CONDITIONS BVCEO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V IC = 1.0 A PGE VCE = 25 V IC = 1600 mA IMD1 POUT = 10 W RBE = 10 Ω MINIMUM TYPICAL MAXIMUM V 60 V 4.0 V 10 f = 225 MHz UNITS 35 5 mA 100 --- 10 dB -54 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1