ASI ASI10685 Npn silicon rf power transistor Datasheet

ULBM45
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ULBM45 is Designed for
PACKAGE STYLE .500 6L FLG
FEATURES:
A
C
•
•
• Omnigold™ Metalization System
2x ØN
FULL R
D
B
MAXIMUM RATINGS
G
IC
10.0 A
VCBO
36 V
VCEO
VCES
E
.725/18,42
F
16 V
VEBO
4.0 V
PDISS
175 W @ TC = 25 OC
-65 OC to +200 OC
TSTG
-65 OC to +150 OC
θ JC
1.0 OC/W
inches / mm
inches / mm
A
.150 / 3.43
.160 / 4.06
MAXIMUM
.045 / 1.14
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
.725 / 18.42
I
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.285 / 7.24
M
SYMBOL
L
MINIMUM
H
TJ
J
I
DIM
B
36 V
CHARACTERISTICS
M
K
H
.120 / 3.05
N
.135 / 3.43
ORDER CODE: ASI10685
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 50 mA
16
V
BVCES
IC = 20 mA
36
V
BVCBO
IC = 5.0 mA
36
BVEBO
IE = 5.0 mA
4.0
ICBO
VCB = 15 V
5.0
mA
ICES
VCE = 22 V
5.0
mA
hFE
VCE = 12.5 V
200
---
Cob
VCB = 12.5 V
150
pF
PG
ηC
VCE = 12.5 V
IC = 1.0 A
V
20
f = 1.0 MHz
POUT = 45 W
f = 470 MHz
5.0
dB
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
%
REV. A
1/1
Similar pages