ASI ASI10718 Npn silicon rf power transistor Datasheet

VHB80-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB80-12 is Designed for
PACKAGE STYLE .500 6L FLG
A
C
FEATURES:
2x ØN
•
•
• Omnigold™ Metalization System
FULL R
D
B
E
.725/18,42
F
G
MAXIMUM RATINGS
IC
20 A
VCBO
36 V
VCEO
16 V
VCES
36 V
VEBO
4.0 V
O
inches / mm
inches / mm
A
.160 / 4.06
O
.045 / 1.14
C
.210 / 5.33
.220 / 5.59
D
.835 / 21.21
.865 / 21.97
E
.200 / 5.08
.210 / 5.33
F
.490 / 12.45
.510 / 12.95
G
.003 / 0.08
.007 / 0.18
.125 / 3.18
.725 / 18.42
J
.970 / 24.64
.980 / 24.89
K
.090 / 2.29
.105 / 2.67
L
.150 / 3.81
.170 / 4.32
.285 / 7.24
.120 / 3.05
N
.135 / 3.43
O
TSTG
-65 C to +150 C
θ JC
0.75 OC/W
CHARACTERISTICS
SYMBOL
MAXIMUM
M
-65 C to +200 C
TJ
L
MINIMUM
I
O
I
.150 / 3.43
H
270 W
J
DIM
B
PDISS
M
K
H
ORDER CODE: ASI10718
O
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
36
V
BVCES
IC = 100 mA
36
V
BVCEO
IC = 100 mA
18
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 12.5 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
PG
ηC
VCC =12.5 V
IC = 5.0 A
10
f = 1.0 MHz
POUT = 80 W
f = 175 MHz
7.0
mA
---
---
380
pF
dB
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
15
%
REV. A
1/1
Similar pages