VLB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI VLB100-12 is Designed for FEATURES: .112x45° L A • • • Omnigold™ Metalization System Ø.125 NOM. FULL R C B E MAXIMUM RATINGS H IC 20 A VCBO 36 V 270 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 C to +150 C θ JC 0.65 OC/W CHARACTERISTICS SYMBOL inches / mm inches / mm A .220 / 5.59 .230 / 5.84 MAXIMUM .125 / 3.18 C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 .125 / 3.18 F .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .280 / 7.11 K O K MINIMUM E PDISS O F DIM B 4.0 V VEBO G I J 18 V VCEO D 1.050 / 26.67 .980 / 24.89 L ORDER CODE: ASI10740 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 100 mA 36 V BVCEO IC = 100 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCC = 12.5 V IC = 5.0 A 20 f = 1.0 MHz POUT = 100 W f = 50 MHz 7.0 mA --- --- 400 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 15 % REV. A 1/1