ASI ASIMRF890 Npn silicon rf power transistor Datasheet

MRF890
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .205 4L STUD
The ASI MRF890 is Designed for
UHF Class A Amplifier Applications in
Cellular Base Station Equipment.
C
E
FEATURES:
• Pg = 9.0 dB min. @ 900 MHz
• P1dB = 2.0 Watts min. at 900 MHz
• Omnigold™ Metalization System
E
B
MAXIMUM RATINGS
IC
0.5 A
VCBO
55 V
VCER
30 V
VEBO
4.0 V
PDISS
7.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
25 C/W
°
CHARACTERISTICS
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MINIMUM TYPICAL MAXIMUM
UNITS
BVCEO
IC = 5.0 mA
30
V
BVCES
IC = 5.0 mA
55
V
BVEBO
IE = 5.0 mA
4.0
V
ICBO
VCB = 30 V
hFE
VCE = 5.0 V
COB
VCB = 30 V
PG
ηC
VCC = 24 V
IC = 100 mA
10
f = 1.0 MHz
POUT = 2.0 V
f = 900 MHz
9.0
55
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
500
µA
100
---
2.0
pF
dB
%
REV. A
1/1
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