ASI ASISD1425 Npn silicon rf power transistor Datasheet

SD1425
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1425 is Designed for
Class AB Linear Base Station
Applications in the 800-900 MHz
Frequency Range.
FEATURES INCLUDE:
• Gold Metalization
• Input Matching
• Common Emitter
• Emitter Ballast Resistors
PACKAGE STYLE .230 6L FLG
MAXIMUM RATINGS
IC
5.0 A
VCBO
50 V
VCES
45 V
PDISS
43 W @ TC = 25 OC
TJ
-65 OC to +200 OC
T STG
-65 OC to +150 OC
θ JC
3.0 OC/W
CHARACTERISTICS
SYMBOL
1,3,4,6 = EMITTER
2 = BASE
5 = COLLECTOR
TC = 25 OC
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV CBO
IC = 100 mA
50
V
BV CEO
IC = 40 mA
25
V
BV CER
IC = 50 mA
50
V
BV EBO
IE = 10 mA
3.5
V
ICBO
VCB = 24 V
hFE
VCE = 10 V
Cob
VCB = 24 V
Pout
GP
ηc
VCC = 24 V
RBE = 22 Ω
IC = 200 mA
20
f = 1.0 MHz
Pin = 5.3 W
f = 960 MHz
40
30
7.5
45
50
2.0
mA
100
---
50
pF
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
ERROR! REFERENCE SOURCE NOT FOUND.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • TELEX : 18-2651 • FAX (818) 765-3004
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