AT27C080 Features • Fast Read Access Time - 90 ns • Low Power CMOS Operation • • • • • • • - 100 µA max. Standby - 40 mA max. Active at 5 MHz JEDEC Standard Packages - 32 Lead PLCC - 32-Lead 600-mil PDIP and Cerdip - 32-Lead 450-mil SOIC (SOP) - 32-Lead TSOP 5V ± 10% Supply High-Reliability CMOS Technology - 2,000V ESD Protection - 200 mA Latchup Immunity Rapid™ Programming Algorithm - 50 µs/byte (typical) CMOS and TTL Compatible Inputs and Outputs Integrated Product Identification Code Industrial and Commercial Temperature Ranges 8-Megabit (1M x 8) UV Erasable CMOS EPROM Description The AT27C080 chip is a low-power, high-performance 8,388,608-bit ultraviolet erasable programmable read only memory (EPROM) organized as 1M by 8 bits. The AT27C080 requires only one 5V power supply in normal read mode operation. Any byte can be accessed in less than 90 ns, eliminating the need for speed reducing WAIT states on high-performance microprocessor systems. Atmel’s scaled CMOS technology provides low active power consumption and fast programming. Power consumption is typically 10 mA in active mode and less than 10 µA in standby mode. (continued) CDIP, PDIP, SOIC Top View Pin Configurations Addresses O0 - O7 Outputs CE Chip Enable OE Output Enable TSOP Top View Type 1 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE/VPP A10 CE 07 06 05 04 03 GND 02 01 O0 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A18 A17 A14 A13 A8 A9 A11 OE/VPP A10 CE 07 06 05 04 03 PLCC Top View A12 A15 A16 A19 VCC A18 A17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A7 A6 A5 A4 A3 A2 A1 A0 O0 4 3 2 1 32 31 30 A0 - A19 A19 A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 Function A14 A13 A8 A9 A11 OE/VPP A10 CE 07 0360F-B–7/97 01 02 GND 03 04 05 06 Pin Name A11 A9 A8 A13 A14 A17 A18 VCC A19 A16 A15 A12 A7 A6 A5 A4 AT27C080 1 The AT27C080 is available in a choice of packages, including; one-time programmable (OTP) plastic PLCC, PDIP, SOIC (SOP), and TSOP, as well as windowed ceramic Cerdip. All devices feature two-line control (CE, OE) to give designers the flexibility to prevent bus contention. With h igh dens ity 1M byte s torage capabi lity, the AT27C080 allows firmware to be stored reliably and to be accessed by the system without the delays of mass storage media. Atmel’s 27C080 has additional features to ensure high quality and efficient production use. The Rapid™ Programming Algorithm reduces the time required to program the part and guarantees reliable programming. Programming time is typically only 50 µs/byte. The Integrated Product Identification Code electronically identifies the device and manufacturer. This feature is used by industry standard programming equipment to select the proper programming algorithms and voltages. Erasure Characteristics The entire memory array of the AT27C080 is erased (all outputs read as VOH) after exposure to ultraviolet light at a wavelength of 2,537Å. Complete erasure is assured after a minimum of 20 minutes of exposure using 12,000 µW/cm2 intensity lamps spaced one inch away from the chip. Minimum erase time for lamps at other intensity ratings can be calculated from the minimum integrated erasure dose of 15 W.sec/cm2. To prevent unintentional erasure, an opaque label is recommended to cover the clear window on any UV erasable EPROM that will be subjected to continuous flourescent indoor lighting or sunlight. 2 AT27C080 System Considerations Switching between active and standby conditions via the Chip Enable pin may produce transient voltage excursions. Unless accommodated by the system design, these transients may exceed data sheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This capacitor should be connected between the VCC and Ground terminals of the device, as close to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again connected between the VCC and Ground terminals. This capacitor should be positioned as close as possible to the point where the power supply is connected to the array. AT27C080 Block Diagram Absolute Maximum Ratings* Temperature Under Bias ...................-55°C to +125°C *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is VCC + 0.75V DC which may overshoot to +7.0V for pulses of less than 20 ns. Storage Temperature.........................-65°C to +150°C Voltage on Any Pin with Respect to Ground ............................-2.0V to +7.0V(1) Voltage on A9 with Respect to Ground .........................-2.0V to +14.0V(1) VPP Supply Voltage with Respect to Ground ..........................-2.0V to +14.0V(1) Integrated UV Erase Dose................ 7258 W•sec/cm2 1. Operating Modes Mode/Pin CE OE/VPP Ai Outputs Read VIL VIL Ai DOUT Output Disable X VIH VIH X X High Z VIL VPP Ai DIN PGM Verify VIL VIL Ai DOUT PGM Inhibit VIH VPP X High Z VIL A9 = VH(3) A0 = VIH or VIL A1 - A19 = VIL Identification Code Standby Rapid Program (2) Product Identification Notes: (4) VIL X (1) High Z 1. X can be VIL or VIH. 2. Refer to Programming Characteristics. 3. VH = 12.0 ± 0.5V. 4. Two identifier bytes may be selected. All Ai inputs are held low (VIL), except A9 which is set to VH and A0 which is toggled low (VIL) to select the Manufacturer’s Identification byte and high (VIH) to select the Device Code byte. 3 DC and AC Operating Conditions for Read Operation AT27C080 Operating Temperature (Case) Com. Ind. VCC Power Supply -90 -10 -12 -15 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% DC and Operating Characteristics for Read Operation Symbol Parameter Condition ILI Input Load Current ILO Output Leakage Current ISB VCC(1) Standby Current ICC VCC Active Current VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA Output High Voltage IOH = -400 µA VOH Note: Min Max Units VIN = 0V to VCC (Com., Ind.) ±1.0 µA VOUT = 0V to VCC (Com., Ind.) ±5.0 µA ISB1 (CMOS), CE = VCC ± 0.3V 100 µA ISB2 (TTL), CE = 2.0 to VCC + 0.5V 1.0 mA f = 5 MHz, IOUT = 0 mA, CE = VIL 40 mA -0.6 0.8 V 2.0 VCC + 0.5 V 0.4 V 2.4 V 1. VCC must be applied simultaneously or before OE/ VPP, and removed simultaneously or after OE/VPP. AC Characteristics for Read Operation AT27C080 -90 Symbol Parameter Condition tACC(4) tCE Max Min -12 Max Min -15 Max Min Max Units Address to Output Delay CE = OE/VPP = VIL 90 100 120 150 ns (3) CE to Output Delay OE = VIL 90 100 120 150 ns (3)(4) OE to Output Delay CE = VIL 20 20 30 35 ns 30 30 35 40 ns tOE tDF(2)(5) OE or CE High to Output Float, whichever occurred first tOH Output Hold from Address, CE or OE/VPP,whichever occurred first Note: 4 Min -10 2, 3, 4, 5. See AC Waveforms for Read Operation. AT27C080 0 0 0 0 ns AT27C080 AC Waveforms for Read Operation(1) Notes: 1. Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified. 2. tDF is specified form OE/VPP or CE, whichever occurs first. Output float is defined as the point when data is no longer driven. 3. OE/VPP may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE. 4. OE/VPP may be delayed up to tACC- tOE after the address is valid without impact on tACC. 5. This parameter is only sampled and is not 100% tested. Input Test Waveform and Measurement Levels Output Test Load tR, tF < 20 ns (10% to 90%) Note: 1. CL = 100 pF including jig capacitance. Pin Capacitance f = 1 MHz, T = 25°C(1) Typ Max Units Conditions CIN 4 8 pF VIN = 0V COUT 8 12 pF VOUT = 0V Note: 1. Typical values for nominal supply voltage. This parameter is only sampled and is not 100% tested. 5 Programming Waveforms Notes: 1. The Input Timing reference is 0.8V for V IL and 2.0V for VIH. 2. tOE and tDFP are characteristics of the device but must be accommodated by the programmer. DC Programming Characteristics TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, OE/VPP = 13.0 ± 0.25V Limits 6 Symbol Parameter Test Conditions ILI Input Load Current VIN = VIL, VIH VIL Input Low Level VIH Input High Level VOL Output Low Voltage IOL = 2.1 mA VOH Output High Voltage IOH = -400 µA ICC2 VCC Supply Current (Program and Verify) IPP2 OE/VPP Supply Current VID A9 Product Identification Voltage AT27C080 Min Max Units ±10 µA -0.6 0.8 V 2.0 VCC + 1.0 V 0.4 V 2.4 CE = VIL 11.5 V 40 mA 25 mA 12.5 V AT27C080 AC Programming Characteristics TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, OE/VPP = 13.0 ± 0.25V Limits Test Conditions(1) Min Max Units Symbol Parameter tAS Address Setup Time 2.0 µs tOES OE/VPP Setup Time 2.0 µs tOEH OE/VPP Hold Time 2.0 µs tDS Data SetupTime 2.0 µs tAH Address Hold Time 0.0 µs tDH Data Hold Time 2.0 µs Input Rise and Fall Times: (10% to 90%) 20 ns. Input Pulse Levels: 0.45V to 2.4V tDFP CE High to Output Float Delay tVCS VCC Setup Time tPW (2) 0.0 Input Timing Reference Level: 0.8V to 2.0V CE Program Pulse Width (3) 130 ns µs 2.0 47.5 Output Timing Reference Level: 0.8V to 2.0V 52.5 µs 1.0 µs tDV Data Valid from CE tVR OE/VPP Recovery Time 2.0 ns tPRT OE/VPP Pulse Rise Time During Programming 50 ns Notes: 1. VCC must be applied simultaneously or before OE/VPP and removed simultaneously or after OE/VPP. 2. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven— see timing diagram. 3. Program Pulse width tolerance is 50 µs ± 5%. Atmel’s 27C080 Integrated Product Identification Code Pins Codes A0 O7 O6 O5 O4 O3 O2 O1 O0 Hex Data Manufacturer 0 0 0 0 1 1 1 1 0 1E Device Type 1 1 0 0 0 1 0 1 0 8A 7 Rapid Programming Algorithm A 50 µs CE pulse width is used to program. The address is set to the first location. VCC is raised to 6.5V and OE/VPP is raised to 13.0V. Each address is first programmed with one 50 µs CE pulse without verification. Then a verification reprogramming loop is executed for each address. In the event a byte fails to pass verification, up to 10 successive 50 µs pulses are applied with a verification after each 8 AT27C080 pulse. If the byte fails to verify after 10 pulses have been applied, the part is considered failed. After the byte verifies properly, the next address is selected until all have been checked. OE/VPP is then lowered to VIL and VCC to 5.0V. All bytes are read again and compared with the original data to determine if the device passes or fails. AT27C080 Ordering Information tACC (ns) 90 100 ICC (mA) Active Standby Ordering Code Package Operation Range 40 0.1 AT27C080-90DC AT27C080-90JC AT27C080-90PC AT27C080-90RC AT27C080-90TC 32DW6 32J 32P6 32R 32T Commercial (0°C to 70°C) 40 0.1 AT27C080-90DI AT27C080-90JI AT27C080-90PI AT27C080-90RI AT27C080-90TI 32DW6 32J 32P6 32R 32T Industrial (-40°C to 85°C) 40 0.1 AT27C080-10DC AT27C080-10JC AT27C080-10PC AT27C080-10RC AT27C080-10TC 32DW6 32J 32P6 32R 32T Commercial (0°C to 70°C) 40 0.1 AT27C080-10DI AT27C080-10JI AT27C080-10PI AT27C080-10RI AT27C080-10TI 32DW6 32J 32P6 32R 32T Industrial (-40°C to 85°C) (continued) Package Type 32DW6 32-Lead, 0.600" Windowed, Ceramic Dual Inline Package (Cerdip) 32J 32-Lead,Plastic J-Leaded Chip Carrier (PLCC) 32P6 32-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 32R 32-Lead, 0.450" Wide, Plastic Gull Wing Small Outline (SOIC) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 9 Ordering Information (Continued) tACC (ns) 120 150 ICC (mA) Active Standby Ordering Code Package 40 0.1 AT27C080-12DC AT27C080-12JC AT27C080-12PC AT27C080-12RC AT27C080-12TC 32DW6 32J 32P6 32R 32T Commercial (0°C to 70°C) 40 0.1 AT27C080-12DI AT27C080-12JI AT27C080-12PI AT27C080-12RI AT27C080-12TI 32DW6 32J 32P6 32R 32T Industrial (-40°C to 85°C) 40 0.1 AT27C080-15DC AT27C080-15JC AT27C080-15PC AT27C080-15RC AT27C080-15TC 32DW6 32J 32P6 32R 32T Commercial (0°C to 70°C) 40 0.1 AT27C080-15DI AT27C080-15JI AT27C080-15PI AT27C080-15RI AT27C080-15TI 32DW6 32J 32P6 32R 32T Industrial (-40°C to 85°C) Package Type 32DW6 32-Lead, 0.600" Windowed, Ceramic Dual Inline Package (Cerdip) 32J 32-Lead,Plastic J-Leaded Chip Carrier (PLCC) 32P6 32-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 32R 32-Lead, 0.450" Wide, Plastic Gull Wing Small Outline (SOIC) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) 10 AT27C080 Operation Range