Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes • Fast Write Cycle Times • • • • • • • • • – Page Write Cycle Time: 10 ms Maximum (Standard) 2 ms Maximum (Option – Ref. AT28HC64BF Datasheet) – 1 to 64-byte Page Write Operation Low Power Dissipation – 40 mA Active Current – 100 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling and Toggle Bit for End of Write Detection High Reliability CMOS Technology – Endurance: 100,000 Cycles – Data Retention: 10 Years Single 5V ±10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide Pinout Industrial Temperature Ranges Green (Pb/Halide-free) Packaging Option Only 1. Description 64K (8K x 8) Parallel EEPROM with Page Write and Software Data Protection AT28C64B The AT28C64B is a high-performance electrically-erasable and programmable readonly memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 150 ns with power dissipation of just 220 mW. When the device is deselected, the CMOS standby current is less than 100 µA. The AT28C64B is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected, a new access for a read or write can begin. Atmel’s AT28C64B has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. An optional software data protection mechanism is available to guard against inadvertent writes. The device also includes an extra 64 bytes of EEPROM for device identification or tracking. 0270L–PEEPR–2/09 2. Pin Configurations 2.2 Function A0 - A12 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect DC Don’t Connect 29 28 27 26 25 24 23 22 21 14 15 16 17 18 19 20 5 6 7 8 9 10 11 12 13 A8 A9 A11 NC OE A10 CE I/O7 I/O6 I/O1 I/O2 GND DC I/O3 I/O4 I/O5 A6 A5 A4 A3 A2 A1 A0 NC I/O0 4 3 2 1 32 31 30 A7 A12 NC DC VCC WE NC Pin Name 32-lead PLCC Top View 2.1 28-lead PDIP, 28-lead SOIC Top View NC A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE NC A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 Note: PLCC package pins 1 and 17 are Don’t Connect. 2.3 28-lead TSOP Top View OE A11 A9 A8 NC WE VCC NC A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 AT28C64B 0270L–PEEPR–2/09 AT28C64B 3. Block Diagram DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION 4. Device Operation 4.1 Read The AT28C64B is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high-impedance state when either CE or OE is high. This dual line control gives designers flexibility in preventing bus contention in their systems. 4.2 Byte Write A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started, it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. 4.3 Page Write The page write operation of the AT28C64B allows 1 to 64 bytes of data to be written into the device during a single internal programming period. A page write operation is initiated in the same manner as a byte write; after the first byte is written, it can then be followed by 1 to 63 additional bytes. Each successive byte must be loaded within 150 µs (tBLC) of the previous byte. If the tBLC limit is exceeded, the AT28C64B will cease accepting data and commence the internal programming operation. All bytes during a page write operation must reside on the same page as defined by the state of the A6 to A12 inputs. For each WE high to low transition during the page write operation, A6 to A12 must be the same. The A0 to A5 inputs specify which bytes within the page are to be written. The bytes may be loaded in any order and may be altered within the same load period. Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. 3 0270L–PEEPR–2/09 4.4 DATA Polling The AT28C64B features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at any time during the write cycle. 4.5 Toggle Bit In addition to DATA Polling, the AT28C64B provides another method for determining the end of a write cycle. During the write operation, successive attempts to read data from the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6 will stop toggling, and valid data will be read. Toggle bit reading may begin at any time during the write cycle. 4.6 Data Protection If precautions are not taken, inadvertent writes may occur during transitions of the host system power supply. Atmel® has incorporated both hardware and software features that will protect the memory against inadvertent writes. 4.6.1 Hardware Data Protection Hardware features protect against inadvertent writes to the AT28C64B in the following ways: (a) VCC sense – if VCC is below 3.8 V (typical), the write function is inhibited; (b) VCC power-on delay – once VCC has reached 3.8 V, the device will automatically time out 5 ms (typical) before allowing a write; (c) write inhibit – holding any one of OE low, CE high, or WE high inhibits write cycles; and (d) noise filter – pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a write cycle. 4.6.2 Software Data Protection A software controlled data protection feature has been implemented on the AT28C64B. When enabled, the software data protection (SDP), will prevent inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C64B is shipped from Atmel with SDP disabled. SDP is enabled by the user issuing a series of three write commands in which three specific bytes of data are written to three specific addresses (see “Software Data Protection Algorithms” on page 10). After writing the 3-byte command sequence and waiting tWC, the entire AT28C64B will be protected against inadvertent writes. It should be noted that even after SDP is enabled, the user may still perform a byte or page write to the AT28C64B by preceding the data to be written by the same 3-byte command sequence used to enable SDP. Once set, SDP remains active unless the disable command sequence is issued. Power transitions do not disable SDP, and SDP protects the AT28C64B during power-up and power-down conditions. All command sequences must conform to the page write timing specifications. The data in the enable and disable command sequences is not actually written into the device; their addresses may still be written with user data in either a byte or page write operation. After setting SDP, any attempt to write to the device without the 3-byte command sequence will start the internal write timers. No data will be written to the device. However, for the duration of tWC, read operations will effectively be polling operations. 4.7 Device Identification An extra 64 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ±0.5V and using address locations 1FC0H to 1FFFH, the additional bytes may be written to or read from in the same manner as the regular memory array. 4 AT28C64B 0270L–PEEPR–2/09 AT28C64B 5. DC and AC Operating Range AT28C64B-15 Operating Temperature (Case) -40°C - 85°C 5V ±10% VCC Power Supply 6. Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT Write(2) VIL VIH VIL DIN Standby/Write Inhibit VIH X(1) X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z VIL VH(3) VIL High Z Chip Erase Notes: 1. X can be VIL or VIH. 2. See “AC Write Waveforms” on page 8. 3. VH = 12.0V ±0.5V. 7. Absolute Maximum Ratings* Temperature Under Bias................................ -55°C to +125°C *NOTICE: Storage Temperature ..................................... -65°C to +150°C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V 8. DC Characteristics Symbol Parameter Condition ILI Input Load Current ILO Min Max Units VIN = 0V to VCC + 1V 10 µA Output Leakage Current VI/O = 0V to VCC 10 µA ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC + 1V 100 µA ISB2 VCC Standby Current TTL CE = 2.0V to VCC + 1V 2 mA ICC VCC Active Current f = 5 MHz; IOUT = 0 mA 40 mA VIL Input Low Voltage 0.8 V VIH Input High Voltage VOL Output Low Voltage IOL = 2.1 mA VOH Output High Voltage IOH = -400 µA 2.0 V 0.40 2.4 V V 5 0270L–PEEPR–2/09 9. AC Read Characteristics AT28C64B-15 Symbol Parameter tACC Min Max Units Address to Output Delay 150 ns tCE(1) CE to Output Delay 150 ns tOE(2) OE to Output Delay 0 70 ns tDF(3)(4) CE or OE to Output Float 0 50 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 ns 10. AC Read Waveforms(1)(2)(3)(4) ADDRESS ADDRESS VALID CE tCE tOE OE tOH tDF tACC OUTPUT Notes: HIGH Z OUTPUT VALID 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested. 6 AT28C64B 0270L–PEEPR–2/09 AT28C64B 11. Input Test Waveforms and Measurement Level tR, tF < 5 ns 12. Output Test Load 13. Pin Capacitance f = 1 MHz, T = 25°C(1) Symbol CIN COUT Note: Typ Max Units Conditions 4 6 pF VIN = 0V pF VOUT = 0V 8 12 1. This parameter is characterized and is not 100% tested. 7 0270L–PEEPR–2/09 14. AC Write Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Setup Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Setup Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 100 ns tDS Data Setup Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns 15. AC Write Waveforms 15.1 WE Controlled OE tOES tOEH ADDRESS tAS CE tCH tAH tCS WE tWP tDS tDH DATA IN 15.2 CE Controlled OE tOES tOEH ADDRESS tAS tCH tAH WE tCS CE tWP tDS tDH DATA IN 8 AT28C64B 0270L–PEEPR–2/09 AT28C64B 16. Page Mode Characteristics Symbol Parameter tWC Min Max Units Write Cycle Time 10 ms tWC Write Cycle Time (option available – Ref. AT28HC64BF datasheet) 2 ms tAS Address Setup Time 0 ns tAH Address Hold Time 50 ns tDS Data Setup Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 100 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 50 µs ns 17. Page Mode Write Waveforms(1)(2) OE CE WE tAS tDH tAH A0 -A12 tBLC tWPH tWP VALID ADD tDS DATA VALID DATA tWC Notes: 1. A6 through A12 must specify the same page address during each high to low transition of WE (or CE). 2. OE must be high only when WE and CE are both low. 18. Chip Erase Waveforms tS tH tW tS = tH = 1 µs (min.) tW = 10 ms (min.) VH = 12.0V ±0.5V 9 0270L–PEEPR–2/09 19. Software Data Protection Enable Algorithm(1) 20. Software Data Protection Disable Algorithm(1) LOAD DATA AA TO ADDRESS 1555 LOAD DATA AA TO ADDRESS 1555 LOAD DATA 55 TO ADDRESS 0AAA LOAD DATA A0 TO ADDRESS 1555 LOAD DATA 55 TO ADDRESS 0AAA WRITES LOAD DATA 80 TO ADDRESS 1555 ENABLED(2) LOAD DATA XX TO ANY ADDRESS(4) LOAD LAST BYTE TO LAST ADDRESS LOAD DATA AA TO ADDRESS 1555 LOAD DATA 55 TO ADDRESS 0AAA ENTER DATA PROTECT STATE LOAD DATA 20 TO ADDRESS 1555 Notes: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A12 - A0 (Hex). EXIT DATA PROTECT STATE(3) LOAD DATA XX TO ANY ADDRESS(4) 2. Write Protect state will be activated at end of write even if no other data is loaded. LOAD LAST BYTE TO LAST ADDRESS 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 64 bytes of data are loaded. Notes: 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A12 - A0 (Hex). 2. Write Protect state will be activated at end of write even if no other data is loaded. 3. Write Protect state will be deactivated at end of write period even if no other data is loaded. 4. 1 to 64 bytes of data are loaded. 21. Software Protected Write Cycle Waveforms(1)(2) OE CE tWPH tWP WE tAS tAH tBLC tDH A0 -A5 A6 - A12 tDS DATA tWC Notes: 1. A6 through A12 must specify the same page address during each high to low transition of WE (or CE) after the software code has been entered. 2. OE must be high only when WE and CE are both low. 10 AT28C64B 0270L–PEEPR–2/09 AT28C64B 22. Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Typ Max Units 0 ns 0 ns (1) tOE tWR Notes: Min OE to Output Delay ns Write Recovery Time 0 1. These parameters are characterized and not 100% tested. See “AC Read Characteristics” on page 6. ns 23. Data Polling Waveforms tOEH tDH tWR tOE 24. Toggle Bit Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns (2) tOE OE to Output Delay tOEHP OE High Pulse tWR Notes: Typ Max Units ns Write Recovery Time 1. These parameters are characterized and not 100% tested. 150 ns 0 ns 2. See “AC Read Characteristics” on page 6. 25. Toggle Bit Waveforms(1)(2)(3) tOEH tOEHP tDH tOE tWR Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. 11 0270L–PEEPR–2/09 26. Normalized ICC Graphs 12 AT28C64B 0270L–PEEPR–2/09 AT28C64B 27. Ordering Information 27.1 Green Package Option (Pb/Halide-free) ICC (mA) tACC (ns) Active 150 27.2 40 Standby 0.1 Ordering Code Package AT28C64B-15JU 32J AT28C64B-15SU 28S AT28C64B-15TU 28T AT28C64B-15PU 28P6 Operation Range Industrial (-40°C to 85°C) Die Products Contact Atmel Sales for die sales options. Package Type 32J 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28P6 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 28S 28-lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) 28T 28-lead, Plastic Thin Small Outline Package (TSOP) 13 0270L–PEEPR–2/09 28. Packaging Information 28.1 32J – PLCC 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER 1.14(0.045) X 45˚ 0.318(0.0125) 0.191(0.0075) E1 E E2 B1 B e A2 D1 A1 D A 0.51(0.020)MAX 45˚ MAX (3X) COMMON DIMENSIONS (Unit of Measure = mm) D2 Notes: 1. This package conforms to JEDEC reference MS-016, Variation AE. 2. Dimensions D1 and E1 do not include mold protrusion. Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. SYMBOL MIN NOM MAX A 3.175 – 3.556 A1 1.524 – 2.413 A2 0.381 – – D 12.319 – 12.573 D1 11.354 – 11.506 D2 9.906 – 10.922 E 14.859 – 15.113 E1 13.894 – 14.046 E2 12.471 – 13.487 B 0.660 – 0.813 B1 0.330 – 0.533 e NOTE Note 2 Note 2 1.270 TYP 10/04/01 R 14 2325 Orchard Parkway San Jose, CA 95131 TITLE 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) DRAWING NO. REV. 32J B AT28C64B 0270L–PEEPR–2/09 AT28C64B 28.2 28P6 – PDIP D PIN 1 E1 A SEATING PLANE A1 L B B1 e E 0º ~ 15º C COMMON DIMENSIONS (Unit of Measure = mm) REF MIN NOM MAX A – – 4.826 A1 0.381 – – D 36.703 – 37.338 E 15.240 – 15.875 E1 13.462 – 13.970 B 0.356 – 0.559 B1 1.041 – 1.651 L 3.048 – 3.556 C 0.203 – 0.381 eB 15.494 – 17.526 SYMBOL eB Notes: 1. This package conforms to JEDEC reference MS-011, Variation AB. 2. Dimensions D and E1 do not include mold Flash or Protrusion. Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). e NOTE Note 2 Note 2 2.540 TYP 09/28/01 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 28P6, 28-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) DRAWING NO. 28P6 REV. B 15 0270L–PEEPR–2/09 28.3 28S – SOIC Dimensions in Millimeters and (Inches). Controlling dimension: Millimeters. 0.51(0.020) 0.33(0.013) 7.60(0.2992) 10.65(0.419) 7.40(0.2914) 10.00(0.394) PIN 1 1.27(0.50) BSC TOP VIEW 18.10(0.7125) 17.70(0.6969) 2.65(0.1043) 2.35(0.0926) 0.30(0.0118) 0.10(0.0040) SIDE VIEWS 0.32(0.0125) 0.23(0.0091) 0º ~ 8º 1.27(0.050) 0.40(0.016) 8/4/03 R 16 2325 Orchard Parkway San Jose, CA 95131 TITLE 28S, 28-lead, 0.300" Body, Plastic Gull Wing Small Outline (SOIC) JEDEC Standard MS-013 DRAWING NO. REV. 28S B AT28C64B 0270L–PEEPR–2/09 AT28C64B 28.4 28T – TSOP PIN 1 0º ~ 5º c Pin 1 Identifier Area D1 D L b e L1 A2 E A GAGE PLANE SEATING PLANE COMMON DIMENSIONS (Unit of Measure = mm) A1 MIN NOM MAX A – – 1.20 A1 0.05 – 0.15 A2 0.90 1.00 1.05 D 13.20 13.40 13.60 D1 11.70 11.80 11.90 Note 2 E 7.90 8.00 8.10 Note 2 L 0.50 0.60 0.70 SYMBOL Notes: 1. This package conforms to JEDEC reference MO-183. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion on E is 0.15 mm per side and on D1 is 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. L1 NOTE 0.25 BASIC b 0.17 0.22 0.27 c 0.10 – 0.21 e 0.55 BASIC 12/06/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small Outline Package, Type I (TSOP) DRAWING NO. REV. 28T C 17 0270L–PEEPR–2/09 Headquarters International Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131 USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Atmel Asia Unit 1-5 & 16, 19/F BEA Tower, Millennium City 5 418 Kwun Tong Road Kwun Tong, Kowloon Hong Kong Tel: (852) 2245-6100 Fax: (852) 2722-1369 Atmel Europe Le Krebs 8, Rue Jean-Pierre Timbaud BP 309 78054 Saint-Quentin-enYvelines Cedex France Tel: (33) 1-30-60-70-00 Fax: (33) 1-30-60-71-11 Atmel Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Technical Support [email protected] Sales Contact www.atmel.com/contacts Product Contact Web Site www.atmel.com Literature Requests www.atmel.com/literature Disclaimer: The information in this document is provided in connection with Atmel products. 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