HP AT41486 Up to 6 ghz low noise silicon bipolar transistor Datasheet

Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor
Technical Data
AT-41486
• Low Noise Figure:
1.4 dB Typical at 1.0␣ GHz
1.7 dB Typical at 2.0␣ GHz
• High Associated Gain:
18.0 dB Typical at 1.0␣ GHz
13.0 dB Typical at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical fT
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”.
Description
Hewlett-Packard’s AT-41486 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41486 is housed in a low cost
surface mount .085" diameter
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter
finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
Applications include use in
wireless systems as an LNA, gain
stage, buffer, oscillator, and
mixer. An optimum noise match
near 50 Ω at 900 MHz, makes this
device easy to use as a low noise
amplifier.
86 Plastic Package
Pin Connections
EMITTER
4
414
Features
BASE
1
The AT-41486 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
4-129
COLLECTOR
3
2
EMITTER
5965-8928E
AT-41486 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Maximum[1]
1.5
20
12
60
500
150
-65 to 150
Units
V
V
V
mA
mW
°C
°C
Thermal Resistance [2,4]:
θjc = 165°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6 mW/°C for
TC > 68°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Part Number Ordering Information
Part Number
Increment
Comments
AT-41486-TR1
AT-41486-BLK
1000
100
Reel
Bulk
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
17.5
11.5
P1 dB
f = 2.0 GHz
dBm
18.0
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 25 mA
1 dB Compressed Gain; VCE = 8 V, IC = 25 mA
f = 2.0 GHz
dB
13.5
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
1.4
1.7
3.0
18.0
13.0
9.0
fT
Gain Bandwidth Product: VCE = 8 V, IC = 25 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz
Note:
1. For this test, the emitter is grounded.
4-130
dB
17.0
GHz
—
µA
µA
pF
1.8
8.0
30
150
0.25
270
0.2
1.0
AT-41486 Typical Performance, TA = 25°C
14
14
18
13
8
9
6
6
4
NF50 Ω
3
NFO
0
0.5
1.0
2.0
2
4V
11
4
4V
6V
10 V
GA
10
4.0 GHz
8
4.0 GHz
0
10
20
30
4
2
0
0
40
10
20
30
Figure 2. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.
Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. VCE = 8 V.
40
20
35
20
MSG
GAIN (dB)
12
|S21E|2 GAIN (dB)
P1dB
G1dB
1.0 GHz
16
30
16
40
IC (mA)
IC (mA)
24
25
20
MAG
15
|S21E|2
10
8
12
2.0 GHz
8
4.0 GHz
4
5
4
0
0
10
20
30
40
IC (mA)
Figure 4. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V,
f = 2.0 GHz.
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 25 mA.
4-131
6
2.0 GHz
NFO
1
0
3.0 4.0 5.0
Figure 1. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
P1 dB (dBm)
3
2
NFO
FREQUENCY (GHz)
G1 dB (dB)
12
6V
GA
12
NF (dB)
12
GAIN (dB)
15
2.0 GHz
10 V
GAIN (dB)
GA
NFO (dB)
21
GAIN (dB)
16
15
0
0
10
20
30
40
IC (mA)
Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
NFO (dB)
24
AT-41486 Typical Scattering Parameters, Common Emitter,
Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣
Freq.
S11
GHz
Mag.
Ang.
0.1
.74
-38
0.5
.59
-127
1.0
.56
-168
1.5
.57
169
2.0
.62
152
2.5
.63
142
3.0
.64
130
3.5
.68
122
4.0
.71
113
4.5
.74
105
5.0
.77
99
5.5
.79
93
6.0
.81
87
=␣ 10 mA
dB
28.1
22.0
16.8
13.5
11.1
9.3
7.6
6.3
5.1
4.0
3.1
2.0
1.1
S21
Mag.
25.46
12.63
6.92
4.72
3.61
2.91
2.41
2.06
1.80
1.59
1.42
1.27
1.13
Ang.
157
107
84
69
56
47
37
26
16
7
-4
-13
-22
dB
-39.6
-30.2
-27.7
-26.2
-24.8
-23.4
-22.2
-20.6
-19.5
-18.0
-17.2
-16.3
-15.4
S12
Mag.
.011
.031
.041
.049
.058
.068
.078
.093
.106
.125
.139
.153
.170
Ang.
68
47
46
49
43
52
52
51
48
48
43
38
34
Mag.
.94
.60
.49
.45
.42
.40
.39
.37
.35
.35
.35
.35
.35
S22
dB
-41.3
-34.1
-29.9
-27.3
-24.8
-22.9
-21.6
-20.1
-18.8
-17.6
-16.6
-15.4
-14.5
S12
Mag.
.009
.020
.032
.043
.058
.072
.083
.099
.115
.132
.149
.169
.188
Ang.
54
48
61
62
59
58
57
56
52
47
42
36
31
Mag.
.85
.51
.46
.44
.43
.40
.38
.36
.34
.32
.31
.31
.33
Ang.
-12
-29
-29
-32
-39
-42
-50
-60
-70
-84
-98
-114
-131
AT-41486 Typical Scattering Parameters,
Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.50
-75
32.0
40.01
142
0.5
.55
-158
23.2
14.38
97
1.0
.57
177
17.5
7.50
78
1.5
.57
161
14.1
5.07
65
2.0
.59
148
11.5
3.75
53
2.5
.61
139
9.6
3.02
45
3.0
.65
128
8.0
2.52
34
3.5
.70
121
6.7
2.17
24
4.0
.74
113
5.7
1.92
14
4.5
.78
107
4.7
1.72
3
5.0
.78
102
3.7
1.53
-8
5.5
.78
96
2.7
1.36
-19
6.0
.76
91
1.6
1.21
-29
A model for this device is available in the DEVICE MODELS section.
AT-41486 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.3
1.3
1.4
1.7
3.0
Γopt
Mag
.12
.10
.04
.12
.44
Ang
3
16
43
-145
-99
4-132
RN/50
0.17
0.17
0.16
0.16
0.40
S22
Ang.
-17
-24
-24
-28
-35
-41
-49
-59
-72
-87
-106
-125
-144
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
45°
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
1
2
1.52 ± 0.25
(0.060 ± 0.010)
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
0.66 ± 0.013
(0.026 ± 0.005)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
2.16 ± 0.13
(0.085 ± 0.005)
0.30 MIN
(0.012 MIN)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
4-133
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