Features • Low-voltage and Standard-voltage Operation • • • • • • • • – 2.7 (VCC = 2.7V to 5.5V) – 1.8 (VCC = 1.8V to 5.5V) User-selectable Internal Organization – 2K: 256 x 8 or 128 x 16 – 4K: 512 x 8 or 256 x 16 Three-wire Serial Interface Sequential Read Operation 2 MHz Clock Rate (5V) Self-timed Write Cycle (10 ms Max) High Reliability – Endurance: 1 Million Write Cycles – Data Retention: 100 Years Automotive Devices Available 8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead Ultra Thin mini-MAP (MLP 2x3), 8-lead TSSOP and 8-ball dBGA2 Packages Description Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16) The AT93C56A/66A provides 2048/4096 bits of serial electrically erasable programmable read-only memory (EEPROM) organized as 128/256 words of 16 bits each (when the ORG pin is connected to VCC) and 256/512 words of 8 bits each (when the ORG pin is tied to ground). The device is optimized for use in many industrial and commercial applications where low-power and low-voltage operations are essential. The AT93C56A/66A is available in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8lead EIAJ SOIC, 8-lead Ultra Thin mini-MAP (MLP 2x3), 8-lead TSSOP, and 8-ball dBGA2 packages. AT93C56A AT93C66A The AT93C56A/66A is enabled through the Chip Select pin (CS) and accessed via a three-wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock (SK). Upon receiving a read instruction at DI, the address is decoded and the data is clocked out serially on the data output pin DO. The write cycle is completely self-timed and no separate erase cycle is required before write. The write cycle is only enabled when the part is in the Erase/Write Enable State. When CS is brought “high” following the initiation of a write cycle, the DO pin outputs the Ready/Busy status of the part. The AT93C56A/66A is available in 2.7V to 5.5V and 1.8V to 5.5V versions. Table 1. Pin Configurations Pin Name Function CS Chip Select SK Serial Data Clock DI Serial Data Input DO Serial Data Output GND Ground VCC Power Supply ORG Internal Organization NC No Connect 8-lead SOIC 8-ball dBGA2 VCC NC ORG GND 8 1 7 2 6 3 5 4 CS SK DI DO CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC ORG GND Bottom view 8-lead Ultra Thin mini-MAP (MLP 2x3) VCC NC ORG GND 1 2 3 4 8 7 6 5 CS SK DI DO 8-lead PDIP CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC ORG GND Bottom view 8-lead TSSOP CS SK DI DO 1 2 3 4 8 7 6 5 VCC NC ORG GND 3378K–SEEPR–12/06 1 Absolute Maximum Ratings* Operating Temperature......................................−55°C to +125°C Storage Temperature .........................................−65°C to +150°C Voltage on Any Pin with Respect to Ground ........................................ −1.0V to +7.0V Maximum Operating Voltage .......................................... 6.25V DC Output Current........................................................ 5.0 mA *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Figure 1. Block Diagram Note: 2 When the ORG pin is connected to VCC, the x 16 organization is selected. When it is connected to ground, the x 8 organization is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the internal 1 Meg ohm pullup, then the x 16 organization is selected. AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A Table 2. Pin Capacitance(1) Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted) Symbol Test Conditions COUT CIN Note: Max Units Conditions Output Capacitance (DO) 5 pF VOUT = 0V Input Capacitance (CS, SK, DI) 5 pF VIN = 0V 1. This parameter is characterized and is not 100% tested. Table 3. DC Characteristics Applicable over recommended operating range from: TAI = −40°C to +85°C, VCC = +1.8V to +5.5V, VCC = +1.8V to +5.5V (unless otherwise noted) Symbol Parameter VCC1 Supply Voltage VCC2 Test Condition Min Typ Max Unit 1.8 5.5 V Supply Voltage 2.7 5.5 V VCC3 Supply Voltage 4.5 5.5 V ICC Supply Current VCC = 5.0V ISB1 Standby Current VCC = 1.8V ISB2 Standby Current ISB3 IIL READ at 1.0 MHz 0.5 2.0 mA WRITE at 1.0 MHz 0.5 2.0 mA CS = 0V 0 0.1 µA VCC = 2.7V CS = 0V 6.0 10.0 µA Standby Current VCC = 5.0V CS = 0V 17 30 µA Input Leakage VIN = 0V to VCC 0.1 3.0 µA 0.1 3.0 µA Output Leakage VIN = 0V to VCC (1) VIL1 VIH1(1) Input Low Voltage Input High Voltage 2.7V ≤ VCC ≤ 5.5V −0.6 2.0 0.8 VCC + 1 V VIL2(1) VIH2(1) Input Low Voltage Input High Voltage 1.8V ≤ VCC ≤ 2.7V −0.6 VCC x 0.7 VCC x 0.3 VCC + 1 V VOL1 VOH1 Output Low Voltage Output High Voltage 2.7V ≤ VCC ≤ 5.5V 0.4 V VOL2 VOH2 Output Low Voltage Output High Voltage 1.8V ≤ VCC ≤ 2.7V IOL Note: IOL = 2.1 mA IOH = −0.4 mA 2.4 IOL = 0.15 mA IOH = −100 µA V 0.2 VCC − 0.2 V V 1. VIL min and VIH max are reference only and are not tested. 3 3378K–SEEPR–12/06 Table 4. AC Characteristics Applicable over recommended operating range from TAI = −40°C to + 85°C, VCC = As Specified, CL = 1 TTL Gate and 100 pF (unless otherwise noted) Symbol Parameter Test Condition fSK SK Clock Frequency 4.5V ≤ VCC ≤ 5.5V 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 0 0 0 tSKH SK High Time 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tSKL SK Low Time 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tCS Minimum CS Low Time 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tCSS CS Setup Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 50 200 ns tDIS DI Setup Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 100 400 ns tCSH CS Hold Time Relative to SK 0 ns tDIH DI Hold Time Relative to SK 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 100 400 ns tPD1 Output Delay to “1” AC Test 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tPD0 Output Delay to “0” AC Test 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tSV CS to Status Valid AC Test 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 250 1000 ns tDF CS to DO in High Impedance AC Test CS = VIL 2.7V ≤ VCC ≤ 5.5V 1.8V ≤ VCC ≤ 5.5V 150 400 ns 10 ms tWP Write Cycle Time Endurance Note: 4 (1) Min 1.8V ≤ VCC ≤ 5.5V 5.0V, 25°C 0.1 1M Typ 3 Max Units 2 1 0.25 MHz Write Cycles 1. This parameter is characterized and is not 100% tested. AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A Table 5. Instruction Set for the AT93C56A and AT93C66A Address Data SB Op Code x8 x 16 READ 1 10 A8 – A0 A7 – A0 EWEN 1 00 11XXXXXXX 11XXXXXX ERASE 1 11 A8 – A0 A7 – A0 WRITE 1 01 A8 – A0 A7 – A0 ERAL 1 00 10XXXXXXX 10XXXXXX WRAL 1 00 01XXXXXXX 01XXXXXX EWDS 1 00 00XXXXXXX 00XXXXXX Instruction Note: x8 x 16 Comments Reads data stored in memory, at specified address. Write enable must precede all programming modes. Erases memory location An – A0. D7 – D0 D15 – D0 Writes memory location An – A0. Erases all memory locations. Valid only at VCC = 4.5V to 5.5V. D7 – D0 D15 – D0 Writes all memory locations. Valid only at VCC = 5.0V ±10% and Disable Register cleared. Disables all programming instructions. The X’s in the address field represent don’t care values and must be clocked. Functional Description The AT93C56A/66A is accessed via a simple and versatile three-wire serial communication interface. Device operation is controlled by seven instructions issued by the host processor. A valid instruction starts with a rising edge of CS and consists of a Start Bit (logic “1”) followed by the appropriate Op Code and the desired memory address location. READ (READ): The Read (READ) instruction contains the address code for the memory location to be read. After the instruction and address are decoded, data from the selected memory location is available at the serial output pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a dummy bit (logic “0”) precedes the 8- or 16-bit data output string. The AT93C56A/66A supports sequential read operations. The device will automatically increment the internal address pointer and clock out the next memory location as long as Chip Select (CS) is held high. In this case, the dummy bit (logic “0”) will not be clocked out between memory locations, thus allowing for a continuous stream of data to be read. ERASE/WRITE (EWEN): To assure data integrity, the part automatically goes into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable (EWEN) instruction must be executed first before any programming instructions can be carried out. Please note that once in the EWEN state, programming remains enabled until an EWDS instruction is executed or VCC power is removed from the part. ERASE (ERASE): The Erase instruction programs all bits in the specified memory location to the logical “1” state. The self-timed erase cycle starts once the ERASE instruction and address are decoded. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic “1” at pin DO indicates that the selected memory location has been erased, and the part is ready for another instruction. 5 3378K–SEEPR–12/06 WRITE (WRITE): The Write (WRITE) instruction contains the 8 or 16 bits of data to be written into the specified memory location. The self-timed programming cycle tWP starts after the last bit of data is received at serial data input pin DI. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). A logic “0” at DO indicates that programming is still in progress. A logic “1” indicates that the memory location at the specified address has been written with the data pattern contained in the instruction and the part is ready for further instructions. A READY/BUSY status cannot be obtained if the CS is brought high after the end of the self-timed programming cycle tWP. ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the memory array to the logic “1” state and is primarily used for testing purposes. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The ERAL instruction is valid only at VCC = 5.0V ± 10%. WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the Ready/Busy status of the part if CS is brought high after being kept low for a minimum of 250 ns (tCS). The WRAL instruction is valid only at VCC = 5.0V ± 10%. ERASE/WRITE DISABLE (EWDS): To protect against accidental data disturb, the Erase/Write Disable (EWDS) instruction disables all programming modes and should be executed after all programming operations. The operation of the READ instruction is independent of both the EWEN and EWDS instructions and can be executed at any time. Timing Diagrams Figure 2. Synchronous Data Timing Note: 6 1. This is the minimum SK period. AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A Table 6. Organization Key for Timing Diagrams AT93C56A (2K) Notes: AT93C66A (4K) I/O x8 x 16 x8 x 16 AN A8(1) A7(2) A8 A7 DN D7 D15 D7 D15 1. A8 is a DON’T CARE value, but the extra clock is required. 2. A7 is a DON’T CARE value, but the extra clock is required. Figure 3. READ Timing tCS CS SK DI DO High Impedance Figure 4. EWEN Timing tCS CS SK DI 1 0 0 1 1 ... Figure 5. EWDS Timing tCS CS SK DI 1 0 0 0 0 ... 7 3378K–SEEPR–12/06 Figure 6. WRITE Timing tCS CS SK DI DO 1 0 1 AN ... A0 DN ... D0 HIGH IMPEDANCE BUSY READY tWP Figure 7. WRAL Timing(1) tCS CS SK DI DO 1 0 0 0 1 ... DN ... D0 BUSY HIGH IMPEDANCE READY tWP Note: 1. Valid only at VCC = 4.5V to 5.5V. Figure 8. ERASE Timing tCS CS STANDBY CHECK STATUS SK DI 1 1 1 AN AN-1 AN-2 ... A0 tDF tSV DO HIGH IMPEDANCE HIGH IMPEDANCE BUSY READY tWP 8 AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A Figure 9. ERAL Timing(1) tCS CS CHECK STATUS STANDBY tSV tDF SK DI DO 1 0 0 1 0 BUSY HIGH IMPEDANCE HIGH IMPEDANCE READY tWP Note: 1. Valid only at VCC = 4.5V to 5.5V. 9 3378K–SEEPR–12/06 AT93C56A Ordering Information(1) Ordering Code Package Operation Range 8P3 8P3 8S1 8S1 8S2 8S2 8A2 8A2 8U3-1 8Y1 8Y6 Lead-free/Halogen-free/ Industrial Temperature (−40°C to 85°C) Die Sales Industrial Temperature (−40°C to 85°C) (2) AT93C56A-10PU-2.7 AT93C56A-10PU-1.8(2) AT93C56A-10SU-2.7(2) AT93C56A-10SU-1.8(2) AT93C56AW-10SU-2.7(2) AT93C56AW-10SU-1.8(2) AT93C56A-10TU-2.7(2) AT93C56A-10TU-1.8(2) AT93C56AU3-10UU-1.8(2) AT93C56AY1-10YU-1.8(2) (Not recommended for new design) AT93C56AY6-10YH-1.8(3) AT93C56A-W1.8-11(4) Notes: 1. 2. 3. 4. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table. “U” designates Green package + RoHS compliant. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) 8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8U3-1 8-ball, die Ball Grid Array Package (dBGA2) 8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead package (DFN), (MLP 2x3 mm) Options −2.7 Low-voltage (2.7V to 5.5V) −1.8 Low-voltage (1.8V to 5.5V) 10 AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A AT93C66A Ordering Information(1) Ordering Code Package Operation Range 8P3 8P3 8S1 8S1 8S2 8S2 8A2 8A2 8U3-1 8Y1 8Y6 Lead-free/Halogen-free/ Industrial Temperature (−40°C to 85°C) Die Sale Industrial Temperature (−40°C to 85°C) (2) AT93C66A-10PU-2.7 AT93C66A-10PU-1.8(2) AT93C66A-10SU-2.7(2) AT93C66A-10SU-1.8(2) AT93C66AW-10SU-2.7(2) AT93C66AW-10SU-1.8(2) AT93C66A-10TU-2.7(2) AT93C66A-10TU-1.8(2) AT93C66AU3-10UU-1.8(2) AT93C66AY1-10YU-1.8(2) (Not recommended for new design) AT93C66AY6-10YH-1.8(3) AT93C66A-W1.8-11(4) Notes: 1. 2. 3. 4. For 2.7V devices used in the 4.5V to 5.5V range, please refer to performance values in the AC and DC characteristics table. “U” designates Green package + RoHS compliant. “H” designates Green package + RoHS compliant, with NiPdAu Lead Finish. Available in waffle pack and wafer form; order as SL788 for inkless wafer form. Bumped die available upon request. Please contact Serial EEPROM Marketing. Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC) 8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) 8A2 8-lead, 0.170" Wide, Thin Shrink Small Outline Package (TSSOP) 8U3-1 8-ball, die Ball Grid Array Package (dBGA2) 8Y1 8-lead, 4.90 mm x 3.00 mm Body, Dual Footprint, Non-leaded, Miniature Array Package (MAP) 8Y6 8-lead, 2.00 mm x 3.00 mm Body, 0.50 mm Pitch, Ultra Thin Mini-MAP, Dual No Lead package (DFN), (MLP 2x3 mm) Options −2.7 Low-voltage (2.7V to 5.5V) −1.8 Low-voltage (1.8V to 5.5V) 11 3378K–SEEPR–12/06 Packaging Information 8P3 – PDIP E 1 E1 N Top View c eA End View COMMON DIMENSIONS (Unit of Measure = inches) D e D1 A2 A MIN NOM A2 0.115 0.130 0.195 b 0.014 0.018 0.022 5 b2 0.045 0.060 0.070 6 b3 0.030 0.039 0.045 6 c 0.008 0.010 0.014 D 0.355 0.365 0.400 D1 0.005 E 0.300 0.310 0.325 4 E1 0.240 0.250 0.280 3 SYMBOL A b2 b3 b 4 PLCS Side View L Notes: 0.210 0.100 BSC eA 0.300 BSC 0.115 NOTE 2 3 3 e L MAX 0.130 4 0.150 2 1. This drawing is for general information only; refer to JEDEC Drawing MS-001, Variation BA for additional information. 2. Dimensions A and L are measured with the package seated in JEDEC seating plane Gauge GS-3. 3. D, D1 and E1 dimensions do not include mold Flash or protrusions. Mold Flash or protrusions shall not exceed 0.010 inch. 4. E and eA measured with the leads constrained to be perpendicular to datum. 5. Pointed or rounded lead tips are preferred to ease insertion. 6. b2 and b3 maximum dimensions do not include Dambar protrusions. Dambar protrusions shall not exceed 0.010 (0.25 mm). 01/09/02 R 12 2325 Orchard Parkway San Jose, CA 95131 TITLE 8P3, 8-lead, 0.300" Wide Body, Plastic Dual In-line Package (PDIP) DRAWING NO. REV. 8P3 B AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A 8S1 – JEDEC SOIC C 1 E E1 L N ∅ Top View End View e B COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D Side View MIN NOM MAX A 1.35 – 1.75 A1 0.10 – 0.25 b 0.31 – 0.51 C 0.17 – 0.25 D 4.80 – 5.00 E1 3.81 – 3.99 E 5.79 – 6.20 e NOTE 1.27 BSC L 0.40 – 1.27 ∅ 0˚ – 8˚ Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. 10/7/03 R 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TITLE 8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing Small Outline (JEDEC SOIC) DRAWING NO. 8S1 REV. B 13 3378K–SEEPR–12/06 8S2 – EIAJ SOIC C 1 E E1 L N Top View ∅ End View e b COMMON DIMENSIONS (Unit of Measure = mm) A SYMBOL A1 D Side View NOM MAX NOTE A 1.70 2.16 A1 0.05 0.25 b 0.35 0.48 5 C 0.15 0.35 5 D 5.13 5.35 E1 5.18 5.40 E 7.70 8.26 L 0.51 0.85 ∅ 0˚ 8˚ e Notes: 1. 2. 3. 4. 5. MIN 1.27 BSC 2, 3 4 This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information. Mismatch of the upper and lower dies and resin burrs are not included. It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded. Determines the true geometric position. Values b and C apply to pb/Sn solder plated terminal. The standard thickness of the solder layer shall be 0.010 +0.010/−0.005 mm. 10/7/03 R 14 2325 Orchard Parkway San Jose, CA 95131 TITLE 8S2, 8-lead, 0.209" Body, Plastic Small Outline Package (EIAJ) DRAWING NO. 8S2 REV. C AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A 8Y1 - MAP PIN 1 INDEX AREA A 1 3 2 4 PIN 1 INDEX AREA E1 D1 D L 8 Bottom View COMMON DIMENSIONS (Unit of Measure = mm) A Side View 5 e End View Top View 6 b A1 E 7 SYMBOL MIN NOM MAX A – – 0.90 A1 0.00 – 0.05 D 4.70 4.90 5.10 E 2.80 3.00 3.20 D1 0.85 1.00 1.15 E1 0.85 1.00 1.15 b 0.25 0.30 0.35 e L NOTE 0.65 TYP 0.50 0.60 0.70 2/28/03 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8Y1, 8-lead (4.90 x 3.00 mm Body) MSOP Array Package (MAP) Y1 DRAWING NO. REV. 8Y1 C 15 3378K–SEEPR–12/06 8Y6 - Mini-MAP (MLP 2x3) D2 A b (8X) E E2 Pin 1 Index Area Pin 1 ID L (8X) D A2 e (6X) A1 1.50 REF. A3 COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL MIN 2.00 BSC E 3.00 BSC MAX D2 1.40 1.50 1.60 E2 - - 1.40 A - - 0.60 A1 0.0 0.02 0.05 A2 - - 0.55 A3 L b NOTE 0.20 REF 0.20 e Notes: NOM D 0.30 0.40 0.50 BSC 0.20 0.25 0.30 2 1. This drawing is for general information only. Refer to JEDEC Drawing MO-229, for proper dimensions, tolerances, datums, etc. 2. Dimension b applies to metallized terminal and is measured between 0.15 mm and 0.30 mm from the terminal tip. If the terminal has the optional radius on the other end of the terminal, the dimension should not be measured in that radius area. 8/26/05 R 16 2325 Orchard Parkway San Jose, CA 95131 DRAWING NO. TITLE 8Y6, 8-lead 2.0 x 3.0 mm Body, 0.50 mm Pitch, Utlra Thin Mini-Map, 8Y6 Dual No Lead Package (DFN) ,(MLP 2x3) REV. C AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A 8A2 – TSSOP 3 2 1 Pin 1 indicator this corner E1 E L1 N L Top View End View COMMON DIMENSIONS (Unit of Measure = mm) SYMBOL A b D MIN NOM MAX NOTE 2.90 3.00 3.10 2, 5 3, 5 E e D A2 6.40 BSC E1 4.30 4.40 4.50 A – – 1.20 A2 0.80 1.00 1.05 b 0.19 – 0.30 e Side View L 0.65 BSC 0.45 L1 Notes: 4 0.60 0.75 1.00 REF 1. This drawing is for general information only. Refer to JEDEC Drawing MO-153, Variation AA, for proper dimensions, tolerances, datums, etc. 2. Dimension D does not include mold Flash, protrusions or gate burrs. Mold Flash, protrusions and gate burrs shall not exceed 0.15 mm (0.006 in) per side. 3. Dimension E1 does not include inter-lead Flash or protrusions. Inter-lead Flash and protrusions shall not exceed 0.25 mm (0.010 in) per side. 4. Dimension b does not include Dambar protrusion. Allowable Dambar protrusion shall be 0.08 mm total in excess of the b dimension at maximum material condition. Dambar cannot be located on the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm. 5. Dimension D and E1 to be determined at Datum Plane H. 5/30/02 R 2325 Orchard Parkway San Jose, CA 95131 TITLE 8A2, 8-lead, 4.4 mm Body, Plastic Thin Shrink Small Outline Package (TSSOP) DRAWING NO. 8A2 REV. B 17 3378K–SEEPR–12/06 8U3-1 – dBGA2 E D 1. b A1 PIN 1 BALL PAD CORNER A2 Top View A Side View PIN 1 BALL PAD CORNER 1 2 3 4 8 7 6 5 (d1) d e COMMON DIMENSIONS (Unit of Measure = mm) (e1) MIN NOM MAX A 0.713 0.79 0.85 A1 0.09 0.14 0.19 SYMBOL Bottom View 8 Solder Balls 1. This drawing is for general information only. 2. Dimension ‘b’ is measured at maximum solder ball diameter A2 0.40 0.45 0.50 b 0.20 0.25 0.30 D 1.50 BSC E 2.00 BSC e 0.50 BSC e1 0.25 REF d 1.00 BSC d1 0.25 REF NOTE 2 5/3/05 R 18 TITLE 1150E Cheyenne Mt. Blvd 8U3-1, 8-ball, 1.50 x 2.00 mm Body, 0.50 mm pitch, Colorado Springs, CO 80906 Small Die Ball Grid Array Package (dBGA2) DRAWING NO. REV. PO8U3-1 b AT93C56A/66A 3378K–SEEPR–12/06 AT93C56A/66A Revision History Revision No. Date Comments 3378K 12/06 Removed DC/Don’t Connect and replaced with NC/No Conenct Adjusted size of Block diagram on pg. 2 Made all diagrams on pages 6-9 consistently the same size Corrected 8U3-1 19 3378K–SEEPR–12/06 Atmel Corporation 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600 Regional Headquarters Europe Atmel Sarl Route des Arsenaux 41 Case Postale 80 CH-1705 Fribourg Switzerland Tel: (41) 26-426-5555 Fax: (41) 26-426-5500 Asia Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon Hong Kong Tel: (852) 2721-9778 Fax: (852) 2722-1369 Japan 9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581 Atmel Operations Memory 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 Microcontrollers 2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 436-4314 La Chantrerie BP 70602 44306 Nantes Cedex 3, France Tel: (33) 2-40-18-18-18 Fax: (33) 2-40-18-19-60 ASIC/ASSP/Smart Cards Zone Industrielle 13106 Rousset Cedex, France Tel: (33) 4-42-53-60-00 Fax: (33) 4-42-53-60-01 RF/Automotive Theresienstrasse 2 Postfach 3535 74025 Heilbronn, Germany Tel: (49) 71-31-67-0 Fax: (49) 71-31-67-2340 1150 East Cheyenne Mtn. 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