AVD002P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL (A) The ASI AVD002P is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° FEATURES: C B • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz • Omnigold™ Metalization System ØG D MAXIMUM RATINGS E IC 250 mA VCC 37 V PDISS 10 W @ TC ≤ 100 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 10 °C/W D IM M IN IM U M in c h e s / m m in c h e s / m m A .0 9 5 / 2 .41 .1 0 5 / 2 .67 B .1 9 5 / 4 .95 .2 0 5 / 5 .21 C 1 .0 0 0 / 2 5 .4 0 D .0 0 4 / 0 .10 .0 0 7 / 0 .18 E .0 5 0 / 1 .27 .0 6 5 / 1 .65 .2 7 5 / 6 .99 .2 8 5 / 7 .21 CHARACTERISTICS ORDER CODE: ASI10553 TC = 25 °C NONETEST CONDITIONS SYMBOL M A X IM U M .1 4 5 / 3 .68 F G F BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICES VCE = 35 V hFE VCE = 5.0 V PG ηC VCC = 35 V RBE = 10 Ω IC = 100 A POUT = 2.0 W MINIMUM TYPICAL MAXIMUM V 45 V 3.5 V 30 f = 1025 – 1150 MHz UNITS 45 9.0 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 mA 300 --dB % REV. B 1/1