ASI AVD250 Npn silicon rf power transistor Datasheet

AVD250
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
DESCRIPTION:
A
.025 x 45°
4x .062 x 45°
2X B
The ASI AVD250 is Designed for
ØD
C
E
F
FEATURES:
G
H
• Input Matching Network
•
• Omnigold™ Metalization System
L
17.8 A
VCC
55 V
PDISS
600 W @ TC ≤ 80 C
M
O
-65 C to +250 C
TJ
O
O
TSTG
-65 C to +200 C
θ JC
0.2 OC/W
CHARACTERISTICS
SYMBOL
N
DIM
MINIMUM
MAXIMUM
inches / mm
inches / mm
A
.020 / 0.51
.030 / 0.76
B
.100 / 2.54
C
.376 / 9.55
D
.110 / 2.79
.130 / 3.30
E
.395 / 10.03
.407 / 10.34
.396 / 10.06
F
.193 / 4.90
G
.450 / 11.43
.125 / 3.18
H
O
O
K
P
MAXIMUM RATINGS
IC
I
J
I
.640 / 16.26
.660 / 16.76
J
.890 / 22.61
.910 / 23.11
K
.395 / 10.03
.415 / 10.54
L
.004 / 0.10
.007 / 0.18
M
.052 / 1.32
.072 / 1.83
N
.118 / 3.00
.131 / 3.33
.230 / 5.84
P
ORDER CODE: ASI10565
O
TC = 25 C
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 25 mA
BVEBO
IE = 1 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
PG
ηC
VCC = 50 V
MHz
RBE = 10 Ω
IC = 1.0 A
POUT = 250 W
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.5
V
15
f = 1025 - 1150
UNITS
6.2
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
25
mA
120
--dB
%
REV. A
1/1
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