AVF100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG (B) The ASI AVF100 is a high power Class-C transistor designed for IFF/DME/TACAN Applications in 1025-1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • 50 V operation • Internal Input/Output Matching Networks • PG = 8.4 dB at 90 W/1090 MHz • Omnigold™ Metalization System • Common Base configuration E F G H I MAXIMUM RATINGS J K DIM MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B 1.050 / 26.67 MAXIMUM C .245 / 6.22 .120 / 3.05 .140 / 3.56 .255 / 6.48 IC 10 A D E .552 / 14.02 .572 / 14.53 VCBO 65 V F .790 / 20.07 .810 / 20.57 .003 / 0.08 .007 / 0.18 .285 / 7.24 G H VCES 65 V PDISS 292 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 0.60 °C/W CHARACTERISTICS .052 / 1.32 .072 / 1.83 J .120 / 3.05 .130 / 3.30 .210 / 5.33 K ORDER CODE: ASI10569 TC = 25 °C NONETEST CONDITIONS SYMBOL I BVCBO IC = 50 mA BVCER IC = 50 mA BVEBO IE = 1.0 mA ICES VCE = 50 V hFE VCE = 5.0 V Cob VCB = 28 V PG ηC VCC = 40 V PIN = 13 W RBE = 10 Ω IC = 100 mA MINIMUM TYPICAL MAXIMUM 65 V 65 V 3.5 V 10 f = 1.0 MHz POUT = 90 W f = 1025 - 1150 MHz UNITS 8.4 35 100 mA 200 --- 80 pF dB % Pulse Width = 10 µsec, Duty Cycle = 1 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/2 AVF100 ERROR! REFERENCE SOURCE NOT FOUND. IMPEDANCE DATA FREQ 960 1050 1150 1215 ZIN(Ω) 2.8 + j7.5 3.9 + j8.2 4.3 + j4.3 4.9 + j4.3 ZCL(Ω) 6.4 - j1.3 5.8 - j1.4 5.0 - j0.0 4.8 - j0.0 PIN = 13 W VCE = 50 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 2/2