ASI AVF100 Npn silicon rf power transistor Datasheet

AVF100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .250 2L FLG (B)
The ASI AVF100 is a high power Class-C
transistor designed for IFF/DME/TACAN
Applications in 1025-1150 MHz.
A
.100 X 45°
ØD
.088 x 45°
CHAMFER
C
B
FEATURES:
• 50 V operation
• Internal Input/Output Matching Networks
• PG = 8.4 dB at 90 W/1090 MHz
• Omnigold™ Metalization System
• Common Base configuration
E
F
G
H
I
MAXIMUM RATINGS
J
K
DIM
MINIMUM
inches / mm
inches / mm
A
.095 / 2.41
.105 / 2.67
B
1.050 / 26.67
MAXIMUM
C
.245 / 6.22
.120 / 3.05
.140 / 3.56
.255 / 6.48
IC
10 A
D
E
.552 / 14.02
.572 / 14.53
VCBO
65 V
F
.790 / 20.07
.810 / 20.57
.003 / 0.08
.007 / 0.18
.285 / 7.24
G
H
VCES
65 V
PDISS
292 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
0.60 °C/W
CHARACTERISTICS
.052 / 1.32
.072 / 1.83
J
.120 / 3.05
.130 / 3.30
.210 / 5.33
K
ORDER CODE: ASI10569
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
I
BVCBO
IC = 50 mA
BVCER
IC = 50 mA
BVEBO
IE = 1.0 mA
ICES
VCE = 50 V
hFE
VCE = 5.0 V
Cob
VCB = 28 V
PG
ηC
VCC = 40 V
PIN = 13 W
RBE = 10 Ω
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
65
V
65
V
3.5
V
10
f = 1.0 MHz
POUT = 90 W
f = 1025 - 1150 MHz
UNITS
8.4
35
100
mA
200
---
80
pF
dB
%
Pulse Width = 10 µsec, Duty Cycle = 1 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
AVF100
ERROR! REFERENCE SOURCE NOT
FOUND.
IMPEDANCE DATA
FREQ
960
1050
1150
1215
ZIN(Ω)
2.8 + j7.5
3.9 + j8.2
4.3 + j4.3
4.9 + j4.3
ZCL(Ω)
6.4 - j1.3
5.8 - j1.4
5.0 - j0.0
4.8 - j0.0
PIN = 13 W
VCE = 50 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2
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