STP140NF75 STB140NF75 - STB140NF75-1 N-channel 75V - 0.0065Ω - 120A - D2PAK/I2/TO-220 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STB140NF75 75V <0.0075Ω 120A(1) STB140NF75-1 75V <0.0075Ω 120A(1) STP140NF75 75V <0.0075Ω 120A(1) 3 1 2 D2PAK TO-220 1. Current limited by package ■ 1 3 100% avalanche tested 3 12 Description I2PAK This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications ■ Switching application Order codes Part number STB140NF75T4 Marking B140NF75 STB140NF75-1 B140NF75 STP140NF75 P140NF75 June 2006 Package Tape & reel 2PAK Tube TO-220 Tube D I Rev 4 Packaging 2PAK 1/18 www.st.com 18 Contents STB140NF75 - STP140NF75-1 - STP140NF75 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Test circuit 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Packaging mechanical data 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 STB140NF75 - STP140NF75-1 - STP140NF75 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol VDS VDGR Parameter Value Unit Drain-source voltage (VGS = 0) 75 V Drain-gate voltage (RGS = 20 kΩ) 75 V VGS Gate- source voltage ± 20 V ID(1) Drain current (continuous) at TC = 25°C 120 A ID(1) Drain current (continuous) at TC = 100°C 100 A Drain current (pulsed) 480 A Total dissipation at TC = 25°C 310 W Derating Factor 2.08 W/°C Peak diode recovery voltage slope 10 V/ns Single pulse avalanche energy 750 mJ -55 to 175 °C IDM (2) Ptot (3) dv/dt EAS (4) Tstg Tj Storage temperature Max. operating junction temperature 1. Value limited by wire bonding 2. Pulse width limited by safe operating area. 3. ISD ≤120A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX 4. Starting Tj = 25 °C, ID = 60A, VDD = 30V Table 2. Thermal data Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max TJ Maximum lead temperature for soldering purpose(1) 0.48 °C/W 62.5 °C/W 300 °C 1. for 10 sec. 1.6mm from case 3/18 Electrical characteristics 2 STB140NF75 - STP140NF75-1 - STP140NF75 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125°C IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS = 10V, ID = 70A Table 4. Symbol Test conditions Typ. Max. 75 Unit V 1 10 µA µA ±100 nA 4 V 0.0065 0.0075 Ω Typ. Max. Unit 2 Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V, ID = 70A 160 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 5000 960 310 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 38V, ID = 70A RG = 4.7Ω VGS = 10V (see Figure 19) 30 140 130 90 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 60V, ID = 120A, VGS = 10V (see Figure 20) 160 28 70 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/18 Min. 218 nC nC nC STB140NF75 - STP140NF75-1 - STP140NF75 Table 5. Symbol Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Electrical characteristics Test conditions Min. Typ. ISD = 120A, VGS = 0 ISD = 120A, Reverse recovery time di/dt = 100A/µs, Reverse recovery charge VDD = 35V, Tj = 150°C Reverse recovery current (see Figure 21) 115 450 8 Max. Unit 120 480 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/18 Electrical characteristics STB140NF75 - STP140NF75-1 - STP140NF75 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/18 STB140NF75 - STP140NF75-1 - STP140NF75 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/18 Electrical characteristics STB140NF75 - STP140NF75-1 - STP140NF75 Figure 13. Power derating vs Tc Figure 14. Max ID current vs Tc c Figure 15. Thermal resistance Rthj-a vs PCB copper area 8/18 Figure 16. Max power dissipation vs PCB copper area STB140NF75 - STP140NF75-1 - STP140NF75 Electrical characteristics Figure 17. Allowable lav vs time in avalanche The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions: PD(AVE) = 0.5 * (1.3 * BVDSS * IAV) EAS(AR) = PD(AVE) * tAV Where: IAV is the allowable current in avalanche PD(AVE) is the average power dissipation in avalanche (single pulse) tAV is the time in avalanche To derate above 25 °C, at fixed IAV , the following equation must be applied: IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth) Where: Zth = K * Rth is the value coming from normalized thermal response at fixed pulse width equal to TAV . 9/18 Spice thermal model 3 STB140NF75 - STP140NF75-1 - STP140NF75 Spice thermal model Table 6. Parameters Parameter Node Value CTHERM1 7-6 1.49 * 10-3 CTHERM2 6-5 3.50 * 10-2 CTHERM3 5-4 5.94 * 10-2 CTHERM4 4-3 9.74 * 10-2 CTHERM5 3-2 8.86 * 10-2 CTHERM6 2-1 8.27 * 10-1 RTHERM1 7-6 0.0384 RTHERM2 6-5 0.0624 RTHERM3 5-4 0.072 RTHERM4 4-3 0.0912 RTHERM5 3-2 0.1008 RTHERM6 2-1 0.1152 Figure 18. Scheme 10/18 STB140NF75 - STP140NF75-1 - STP140NF75 4 Test circuit Test circuit Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit Figure 21. Test circuit for inductive load Figure 22. Unclamped Inductive load test switching and diode recovery times circuit Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform 11/18 Package mechanical data 5 STB140NF75 - STP140NF75-1 - STP140NF75 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 12/18 STB140NF75 - STP140NF75-1 - STP140NF75 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 13/18 Package mechanical data STB140NF75 - STP140NF75-1 - STP140NF75 TO-262 (I2PAK) MECHANICAL DATA mm. inch DIM. MIN. 14/18 MAX. MIN. A 4.40 TYP 4.60 0.173 TYP. 0.181 MAX. A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB140NF75 - STP140NF75-1 - STP140NF75 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 15/18 Packaging mechanical data 6 STB140NF75 - STP140NF75-1 - STP140NF75 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB140NF75 - STP140NF75-1 - STP140NF75 7 Revision history Revision history Table 7. Revision history Date Revision Changes 21-Jun-2004 2 Preliminary datasheet 19-Jun-2006 3 New template, content change 28-Jun-2006 4 Graphical updates, Figure 10 and Figure 13 17/18 STB140NF75 - STP140NF75-1 - STP140NF75 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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