Vishay BAT54WS-V-GS18 Small signal schottky diode Datasheet

BAT54WS-V
Vishay Semiconductors
Small Signal Schottky Diode
Features
• These diodes feature very low turn-on
voltage and fast switching
e3
• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
BAT54WS-V
BAT54WS-V-GS18 or BAT54WS-V-GS08
Type Marking
Remarks
L4
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Symbol
Value
Unit
VRRM
30
V
1)
mA
IFRM
3001)
mA
Surge forward current
tp < 1 s, Tamb = 25 °C
IFSM
600
1)
mA
Power dissipation1)
Tamb = 25 °C
Ptot
1501)
mW
Forward continuous current
Tamb = 25 °C
IF
Repetitive peak forward current
Tamb = 25 °C
1)
200
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature range
1)
Symbol
Value
Unit
RthJA
6501)
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Valid provided that electrodes are kept at ambient temperature
Document Number 85667
Rev. 1.5, 14-Nov-06
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BAT54WS-V
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
Leakage
tested with 100 µA pulses
current2)
Forward voltage2)
Symbol
Min
V(BR)
30
Typ.
Max
Unit
V
VR = 25 V
IR
2
µA
IF = 0.1 mA
VF
240
mV
IF = 1 mA
VF
320
mV
IF = 10 mA
VF
400
mV
IF = 30 mA
VF
500
mV
IF = 100 mA
VF
800
mV
Diode capacitance
VR = 1 V, f = 1 MHz
CD
10
pF
Reverse recovery time
IF = IR = 10 mA; IR = 1 mA; RL = 100 Ω
trr
5
ns
2)
Pulse test: tp < 300 µs, θ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
T j = 125 °C
T j = 125 °C
100
I R - Reverse Current (µA)
I F - Forward Voltage (mA)
1000
- 40 °C
10
1
25 °C
0.1
0.01
0
100
100 °C
75 °C
10
50 °C
1
25 C
0.1
0.01
0.2
18867
1.2
0.4 0.6 0.8
1
VF - Forward Current (V)
1.4
0
18869
Figure 1. Typical Forward Voltage Forward Current at Various
Temperatures
5
10
15
20
25
VR - Reverse Voltage (V)
30
Figure 3. Typical Variation of Reverse Current at Various
Temperatures
C D - Typical Capacitance (pF)
14
12
10
8
6
4
2
0
0
18868
4
8
12
16
20
24
VR - Reverse Voltage (V)
28
Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR
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Document Number 85667
Rev. 1.5, 14-Nov-06
BAT54WS-V
Vishay Semiconductors
0.1 (0.004) max
0.10 (0.004)
0.15 (0.006)
0.8 (0.031)
1.15 (0.045)
Package Dimensions in mm (Inches): SOD323
0.25 (0.010) min
1.95 (0.077)
1.60 (0.063)
foot print recommendation:
0.6 (0.024)
0.6 (0.024)
1.6 (0.063)
0.6 (0.024)
1.1 (0.043)
2.85 (0.112)
2.50 (0.098)
1.5 (0.059)
0.20 (0.008)
0.40 (0.016)
cathode bar
Document no.: S8-V-3910.02-001 (4)
Rev. 03 - Date: 08.November 2004
17443
Document Number 85667
Rev. 1.5, 14-Nov-06
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BAT54WS-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85667
Rev. 1.5, 14-Nov-06
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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