BAV19WS-V, BAV20WS-V, BAV21WS-V Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • For general purpose • These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 to BAS21 and the SOD-123 case with the type designation BAV19W-V to BAV21W-V • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 5 mg Packaging Codes/Options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box Parts Table Part Type differentiation Ordering code Type Marking Remarks BAV19WS-V VR = 100 V BAV19WS-V-GS18 or BAV19WS-V-GS08 A8 Tape and reel BAV20WS-V VR = 150 V BAV20WS-V-GS18 or BAV20WS-V-GS08 A9 Tape and reel BAV21WS-V VR = 200 V BAV21WS-V-GS18 or BAV21WS-V-GS08 AA Tape and reel Document Number 85726 Rev. 1.5, 26-Nov-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Repetitive peak reverse voltage Part Symbol Value Unit BAV19WS-V VR 100 V BAV20WS-V VR 150 V BAV21WS-V VR 200 V BAV19WS-V VRRM 120 V BAV20WS-V VRRM 200 V BAV21WS-V VRRM 250 V IF 250 1) mA IF(AV) 200 1) mA mA Forward continuous current Rectified current (average) half wave rectification with resist. load Repetitive peak forward current f ≥ 50 Hz, θ = 180° IFRM 625 1) Surge forward current t < 1 s, Tj = 25 °C IFSM 1 Ptot Power dissipation 200 A 1) mW Note 1) Valid provided that leads are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 650 1) K/W Tj 150 1) Junction temperature Tstg Storage temperature range - 65 to + 150 °C 1) °C Note 1) Valid provided that leads are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward voltage Leakage current Max. Unit IF = 100 mA VF 1 V IF = 200 mA VF 1.25 V Diode capacitance Reverse recovery time www.vishay.com 2 Symbol Min. Typ. VR = 100 V BAV19WS-V IR 100 nA VR = 100 V, Tj = 100 °C BAV19WS-V IR 15 µA VR = 150 V BAV20WS-V IR 100 nA VR = 150 V, Tj = 100 °C BAV20WS-V IR 15 µA VR = 200 V BAV21WS-V IR 100 nA BAV21WS-V IR 15 µA VR = 200 V, Tj = 100 °C Dynamic forward resistance Part IF = 10 mA rf 5 Ω VR = 0, f = 1 MHz CD 1.5 pF IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω trr 50 ns For technical questions within your region, please contact one of the following: Document Number 85726 [email protected], [email protected], [email protected] Rev. 1.5, 26-Nov-10 BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Tj = 100 °C 100 10 25 °C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 10 100 IF - Forward Current (mA) Figure 4. Dynamic Forward Resistance vs. Forward Current 1000 IR(Tj)/IR (25 °C) - Leakage Current 0.3 I O , I F - Admissible Forward Current (A) 1 18861 Figure 1. Forward Current vs. Forward Voltage 0.2 DC current IF Current (rectif.) I O 0.1 100 10 1 0 0 30 60 90 120 0.1 0 150 Tamb - Ambient Temperature (°C) 18859 Figure 2. Admissible Forward Current vs. Ambient Temperature 18862 250 200 150 100 50 Reverse Voltage BAV19WS-V VR = 100 V BAV20WS-V VR = 150 V BAV21WS-V VR = 200 V 40 80 120 160 Tj - Junction Temperature (°C) 200 Figure 5. Leakage Current vs. Junction Temperature CD - Diode Capacitance (pF) Ptot - Admissible Power Dissipation (W) 10 1 VF - Forward Voltage (V) 18858 100 rf - Dynamic Forward Resistance (Ω) I F - Forward Current (mA) 1000 2.0 1.8 T j = 25 ° C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0 0.1 20 40 60 80 100 120 140 160 180 200 18864 Tamb - Ambient Temperature (°C) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Document Number 85726 Rev. 1.5, 26-Nov-10 18863 1 10 100 VR - Reverse Voltage (V) Figure 6. Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors 0.1 (0.004) max. 0° to 8 ° 0.15 (0.006) 0.10 (0.004) 0.2 (0.008) 0.8 (0.031) 1.15 (0.045) Package Dimensions in millimeters (inches): SOD-323 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) 2.50 (0.098) 1.1 (0.043) 2.85 (0.112) 1.5 (0.059) 0.40 (0.016) 0.20 (0.008) Cathode bar Foot print recommendation: Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 17443 www.vishay.com 4 1.6 (0.063) 0.6 (0.024) 0.6 (0.024) 0.6 (0.024) For technical questions within your region, please contact one of the following: Document Number 85726 [email protected], [email protected], [email protected] Rev. 1.5, 26-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000