Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching ● High breakdown voltage ● Common cathode ● Type Marking Ordering Code (tape and reel) BAW 79 A BAW 79 B BAW 79 C BAW 79 D GE GF GG GH Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 Pin Configuration Package1) SOT-89 Maximum Ratings per Diode Parameter Symbol BAW Values BAW BAW Unit BAW Reverse voltage VR 50 100 200 400 Peak reverse voltage VRM 50 100 200 400 Forward current IF 1 Peak forward current IFM 1 Surge forward current t = 1 µs IFS 10 Total power dissipation TS = 115 ˚C Ptot 1 W Junction temperature Tj 150 ˚C Storage temperature range Tstg V A – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA Junction - soldering point Rth JS 1) 2) ≤ ≤ 175 K/W 35 For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 79 A … BAW 79 D Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Breakdown voltage I(BR) = 100 µA V V(BR) BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A VF Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C IR 50 100 200 400 – – – – – – – – – – – – 1.6 2 – – – – 1 50 V µA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CD – 10 – pF Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA trr – 1 – µs Test circuit for reverse recovery time Pulse generator: tp = 5 µs, D = 0.05 tr = 0.6 ns, Rj = 50 Ω 1) Oscillograph: Pulse test: tp ≤ 300 µs, D = 2 %. Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF BAW 79 A … BAW 79 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) TA = 25 ˚C Reverse current IR = f (TA) VR = VRmax Semiconductor Group 3