Hitachi BB601M Build in biasing circuit mos fet ic uhf rf amplifier Datasheet

BB601M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-702C (Z)
4th. Edition
Nov. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
PG = 21.5 dB typ. at f = 900 MHz
• Low noise;
NF = 1.85 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143mod)
Outline
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “AT–”.
2. BB601M is individual type number of HITACHI BBFET.
BB601M
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDS
6
V
Gate1 to source voltage
VG1S
+6
–0
V
Gate2 to source voltage
VG2S
+6
–0
V
Drain current
ID
20
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
6
—
—
V
I D = 200µA
VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V(BR)G1SS
+6
—
—
V
I G1 = +10µA
VG2S = VDS = 0
Gate2 to source breakdown
voltage
V(BR)G2SS
+6
—
—
V
I G2 = +10µA
VG1S = VDS = 0
Gate1 to source cutoff current I G1SS
—
—
+100
nA
VG1S = +5V
VG2S = VDS = 0
Gate2 to source cutoff current I G2SS
—
—
+100
nA
VG2S = +5V
VG1S = VDS = 0
Gate1 to source cutoff voltage VG1S(off)
0.5
0.7
1.0
V
VDS = 5V, VG2S = 4V
I D = 100µA
Gate2 to source cutoff voltage VG2S(off)
0.5
0.7
1.0
V
VDS = 5V, VG1S = 5V
I D = 100µA
Drain current
I D(op)
7
10
13
mA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 47kΩ
Forward transfer admittance
|yfs|
19
24
29
mS
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 47kΩ, f = 1kHz
Input capacitance
c iss
1.4
1.7
2.0
pF
VDS = 5V, VG1 = 5V
Output capacitance
c oss
0.7
1.1
1.5
pF
VG2S =4V, RG = 47kΩ
Reverse transfer capacitance c rss
—
0.019
0.04
pF
f = 1MHz
Power gain
17
21.5
—
dB
VDS = 5V, VG1 = 5V
PG
VG2S =4V, RG = 47kΩ
Noise figure
2
NF
—
1.85
2.4
dB
f = 900MHz
BB601M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2
VG1
RG
Gate 2
Gate 1
Drain
Source
A
ID
Application Circuit
V DS = 5 V
VAGC = 4 to 0.3 V
BBFET
RFC
Output
Input
RG
V GG = 5 V
3
BB601M
900MHz Power Gain, Noise Test Circuit
VD
VG1 VG2
C6
C4
C5
R1
R2
C3
R3
RFC
D
G2
Output
L3
L4
G1
Input
S
L1
L2
C1
C1, C2 :
C3 :
C4 — C6 :
R1 :
R2 :
R3 :
C2
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
47 kΩ
47 kΩ
4.7 kΩ
L2:
L1:
10
3
3
8
10
26
(φ1mm Copper wire)
Unit: mm
21
L4:
L3:
18
10
10
7
7
29
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
4
Typical Output Characteristics
20
I D (mA)
200
Maximum Channel Power
Dissipation Curve
150
Drain Current
Channel Power Dissipation
Pch (mW)
BB601M
100
50
0
50
100
150
Ambient Temperature
V G2S = 4 V
V G1 = VDS
16
12
4
Ta (°C)
I D (mA)
V DS = 5 V
R G = 33 kΩ
4V
3V
Drain Current
I D (mA)
Drain Current
kΩ
27 Ω
k
33 k Ω
9
3 Ω
k
47 k Ω
56 k Ω
68 k Ω
82
kΩ
100
4
5
V DS (V)
20
12
2V
8
4
VG2S = 1 V
0
1
2
3
Drain to Source Voltage
kΩ
Drain Current vs. Gate1 Voltage
Drain Current vs. Gate1 Voltage
20
16
=
8
0
200
R
G
22
1
2
Gate1 Voltage
3
V G1
4
(V)
V DS = 5 V
R G = 47 kΩ
16
12
8
3V
4V
2V
4
VG2S = 1 V
5
0
1
2
3
Gate1 Voltage V G1
4
(V)
5
5
BB601M
Forward Transfer Admittance |y fs | (mS)
Drain Current vs. Gate1 Voltage
Drain Current
I D (mA)
20
16
V DS = 5 V
R G = 68 kΩ
12
8
4V
3V
2V
4
VG2S = 1 V
0
1
2
V G1
(V)
30
24
30
24
V DS = 5 V
R G = 47 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
1
2
3
4
Gate1 Voltage V G1 (V)
5
4V
3V
2V
12
6
VG2S = 1 V
0
5
V DS = 5 V
R G = 33 kΩ
f = 1 kHz
18
Forward Transfer Admittance
vs. Gate1 Voltage
0
6
4
Forward Transfer Admittance |y fs | (mS)
Forward Transfer Admittance |y fs | (mS)
Gate1 Voltage
3
Forward Transfer Admittance
vs. Gate1 Voltage
1
2
3
4
Gate1 Voltage V G1 (V)
5
Forward Transfer Admittance
vs. Gate1 Voltage
30
24
V DS = 5 V
R G = 68 kΩ
f = 1 kHz
4V
3V
18
2V
12
6
VG2S = 1 V
0
1
2
3
4
Gate1 Voltage V G1 (V)
5
BB601M
Noise Figure vs. Gate Resistance
Power Gain vs. Gate Resistance
4
25
Noise Figure NF (dB)
Power Gain PG (dB)
30
20
15
10
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
3
2
1
5
0
10
20
50
Gate Resistance R G (k Ω )
0
10
100
Power Gain vs. Drain Current
Noise Figure NF (dB)
Power Gain PG (dB)
20
15
0
0
100
4
25
5
20
50
Gate Resistance R G (k Ω )
Noise Figure vs. Drain Current
30
10
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
5
10
15
Drain Current I D (mA)
20
3
2
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
1
0
0
5
10
15
20
Drain Current I D (mA)
7
BB601M
Power Gain vs.
Gate2 to Source Voltage
Drain Current vs. Gate Resistance
25
10
VDS = VG1 = 5 V
VG2S = 4 V
5
0
10
Noise Figure NF (dB)
5
4
20
20
15
10
V DS = 5 V
R G = 47 kΩ
f = 900 MHz
5
50
0
1
100
2
4
3
Gate Resistance R G (k Ω )
Gate2 to Source Voltage V G2S (V)
Noise Figure vs.
Gate2 to Source Voltage
Input Capacitance vs.
Gate2 to Source Voltage
V DS = 5 V
R G = 47 kΩ
f = 900 MHz
3
2
1
1
8
Power Gain PG (dB)
15
4
Input Capacitance Ciss (pF)
Drain Current I D (mA)
20
3
2
1
0
4
2
3
Gate2 to Source Voltage V G2S (V)
V DS = 5 V
R G = 47 kΩ
f = 1 MHz
0
1
2
3
Gate2 to Source Voltage V G2S (V)
4
BB601M
Gain Reduction vs.
Gate2 to Source Voltage
Gain Reduction GR (dB)
0
10
20
30
V DS = V G1 = 5 V
V G2S = 4 V
R G = 47 kΩ
40
50
4
3
2
1
0
Gate2 to Source Voltage V G2S (V)
9
BB601M
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
.8
1
.6
90°
1.5
Scale: 1 / div.
60°
120°
2
.4
3
30°
150°
4
5
.2
10
.2
0
.4
.6 .8 1
1.5 2
3 45
10
180°
0°
–10
–5
–4
–.2
–3
–.4
–30°
–150°
–2
–.6
–.8
–1
–90°
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 47 k Ω ,
Zo = 50 Ω
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 47 k Ω ,
Zo = 50 Ω
50 — 1000 MHz (50 MHz step)
50 — 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
S22 Parameter vs. Frequency
Scale: 0.002 / div.
.8
60°
120°
–60°
–120°
–1.5
1
.6
1.5
2
.4
3
30°
150°
4
5
.2
10
180°
0°
.2
0
.4
.6 .8 1
1.5 2
3 45
10
–10
–5
–4
–.2
–30°
–150°
–3
–.4
–60°
–120°
–90°
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 47 k Ω ,
Zo = 50 Ω
50 — 1000 MHz (50 MHz step)
10
–2
–.6
–.8
–1
–1.5
Test Condition: V DS = 5 V , V G1 = 5 V
V G2S = 4 V , R G = 47 k Ω ,
Zo = 50 Ω
50 — 1000 MHz (50 MHz step)
BB601M
Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 47kΩ, Zo = 50Ω)
S11
S21
S12
S22
f (MHz) MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
50
0.974
–2.8
2.40
176.4
0.00057
78.1
0.997
–2.0
100
0.974
–10.0
2.38
172.2
0.00144
82.4
0.998
–4.2
150
0.974
–13.6
2.38
168.4
0.00211
78.7
0.997
–6.0
200
0.965
–16.5
2.37
164.1
0.00316
84.8
0.995
–8.1
250
0.963
–20.0
2.35
160.4
0.00358
76.3
0.994
–10.2
300
0.953
–23.7
2.32
156.8
0.00431
84.0
0.992
–12.2
350
0.947
–26.8
2.30
152.9
0.00503
79.0
0.990
–14.2
400
0.942
–29.6
2.28
148.6
0.00545
76.6
0.987
–16.2
450
0.929
–32.8
2.26
144.9
0.00630
80.3
0.984
–18.1
500
0.923
–35.4
2.21
141.2
0.00646
76.1
0.981
–20.2
550
0.912
–38.5
2.19
137.6
0.00693
73.7
0.977
–22.1
600
0.903
–41.2
2.15
134.2
0.00732
72.9
0.974
–24.1
650
0.886
–44.2
2.12
130.6
0.00729
74.6
0.971
–26.0
700
0.879
–46.8
2.08
127.4
0.00733
72.0
0.967
–27.8
750
0.873
–49.2
2.06
124.3
0.00762
74.5
0.962
–29.7
800
0.859
–52.4
2.03
120.8
0.00756
73.7
0.959
–31.7
850
0.846
–55.4
2.00
117.3
0.00772
75.5
0.955
–33.6
900
0.836
–58.0
1.96
114.3
0.00775
79.6
0.951
–35.5
950
0.827
–60.4
1.93
111.0
0.00801
81.7
0.946
–37.3
1000
0.815
–62.8
1.89
108.0
0.00704
81.0
0.942
–39.4
11
BB601M
Package Dimensions
Unit: mm
1.9 ±0.2
0.95 0.95
+ 0.1
+ 0.1
0.4 – 0.05
0.4 – 0.05
4
0.65 ± 0.1
2.95 ±0.2
+ 0.1
0.16 – 0.06
2.8 ± 0.2
1.5 ± 0.15
3
0—0.1
+ 0.1
0.4 – 0.05
0.85
0.95
0.65 ± 0.1
2
1
+ 0.1
0.6 – 0.05
1.1± 0.1
0.8
1.8
12
Hitachi Code
EIAJ
JEDEC
MPAK–4R
—
—
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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