BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : BC327 : BC328 Value Units -50 -30 V V -45 -25 V V Collector-Emitter Voltage : BC327 : BC328 VCEO VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -800 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : BC327 : BC328 Test Condition IC= -10mA, IB=0 Collector-Emitter Breakdown Voltage : BC327 : BC328 IC= -0.1mA, VBE=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 ICES Collector Cut-off Current : BC327 : BC328 VCE= -45V, VBE=0 VCE= -25V, VBE=0 BVCES hFE1 hFE2 Min. Typ. VCE= -1V, IC= -100mA VCE= -1V, IC= -300mA Units -45 -25 V V -50 -30 V V -5 V -2 -2 DC Current Gain Max. 100 40 -100 -100 nA nA 630 VCE (sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 VBE (on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=20MHz 100 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 12 pF V V hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170- ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 BC327/328 Typical Characteristics -20 mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = -400 -300 1.5 IB = - IB= IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -500 mA -200 PT = 60 0mW IB = - 1.0mA IB = - 0.5mA -100 µA - 80 µA - 70 I = B -16 IB= µA - 60 IB= P -12 IB= µA - 40 IB = - -8 30µA 0µA IB = - 2 -4 IB = - 10µA IB = 0 IB = 0 -0 -1 -2 -3 -4 -5 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE PULSE hFE, DC CURRENT GAIN V CE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -30 -40 -50 Figure 2. Static Characteristic 1000 1 -0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic -1000 -10 IC = 10 IB PULSE V CE(sat) -1 -0.1 V BE(sat) -0.01 -0.1 IC[mA], COLLECTOR CURRENT -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 1000 fT[MHz], GAIN-BANDWIDTH PRODUCT IC[mA], COLLECTOR CURRENT =6 00 mW T µA - 50 VCE = -1V PULSE -100 -10 -1 -0.1 -0.4 VCE = -5.0V 100 10 -0.5 -0.6 -0.7 -0.8 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2002 Fairchild Semiconductor Corporation -0.9 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 6. Gain Bandwidth Product Rev. B1, August 2002 BC327/328 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1