BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain ● High collector current ● 2 1 Type Marking Ordering Code BC 617 BC 618 – Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E 3 Package1) TO-92 Maximum Ratings Parameter Symbol Values BC 617 BC 618 Unit V Collector-emitter voltage VCE0 40 55 Collector-base voltage VCB0 50 80 Emitter-base voltage VEB0 12 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 66 ˚C Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg mA – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 Junction - case2) Rth JC ≤ 135 1) 2) K/W For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 617 BC 618 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 617 BC 618 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA V(BR)CB0 BC 617 BC 618 Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C ICB0 BC 617 BC 618 BC 617 BC 618 Emitter cutoff current VEB = 4 V DC current gain IC = 100 µA; VCE = 5 V IC = 10 mA; VCE = 5 V1) IC = 200 mA; VCE = 5 V1) IC = 1000 mA; VCE = 5 V1) IEB0 V 40 55 – – – – 50 80 – – – – 12 – – – – – – – – – – 100 100 10 10 nA nA µA µA – – 100 nA 4000 2000 10000 4000 20000 10000 10000 4000 – – – – – – – – – – – – 70000 50000 – – – hFE BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 Collector-emitter saturation voltage1) IC = 200 mA; IB = 0.2 mA VCEsat – – 1.1 Base-emitter saturation voltage1) IC = 200 mA; IB = 0.2 mA VBEsat – – 1.6 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 V BC 617 BC 618 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz fT – 150 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3.5 – pF Total power dissipation Ptot = f (TA; TC) Semiconductor Group Collector cutoff current ICB0 = f (TA) VCB = 40 V, 60 V 3 BC 617 BC 618 Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Collector-emitter saturation voltage VCEsat = f (IC) hFE = 1000, parameter = TA Base-emitter saturation voltage VBEsat = f (IC) hFE = 1000, parameter = TA Semiconductor Group 4 BC 617 BC 618 DC current gain hFE = f (IC) Semiconductor Group Capacitance C = f (VEB, VCB) 5