Diodes BC817-16-7-F 45v npn small signal transistor Datasheet

BC817-16/-25/-40
45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Features
Mechanical Data
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Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
Complementary PNP Types Available (BC807)
For switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Automotive-Compliant Parts Are Available Under Separate
Datasheet (BC817-16Q_40Q)
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (Approximate)
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SOT23
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
BC817-16-7-F
BC817-25-7-F
BC817-40-7-F
Notes:
Compliance
AEC-Q101
AEC-Q101
AEC-Q101
Marking
K6A
K6B
K6C
Reel Size (inches)
7
7
7
Tape Width (mm)
8
8
8
Quantity Per Reel
3,000
3,000
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
XXX = Product Type Marking Code (See Table Above)
YM = Date Code Marking
Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2015
C
2016
D
2017
E
2018
F
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
2026
N
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Document number: DS11107 Rev. 21 - 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Value
50
45
5.0
0.5
1.0
200
Unit
V
V
V
A
A
mA
Value
310
350
403
357
350
-65 to +150
Unit
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
PD
RθJA
RθJL
TJ, TSTG
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Symbol
ESD HBM
Value
8,000
Unit
V
Electrostatic Discharge - Machine Model
ESD MM
400
V
Notes:
JEDEC Class
3B
C
5. For a device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except mounted on 15mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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Document number: DS11107 Rev. 21 - 2
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0.4
400
350
o
Thermal Resistance ( C/W)
Max Power Dissipation (W)
Thermal Characteristics and Derating Information
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
300
250
200
150
100
D=0.1
Single Pulse
D=0.2
50
D=0.05
0
100μ
100µ
o
Max Power Dissipation (W)
D=0.5
1m
10m 100m
1
10
100
Temperature ( C)
Pulse Width (s)
Derating Curve
Transient Thermal Impedance
1k
10
o
Single Pulse. T amb=25 C
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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Document number: DS11107 Rev. 21 - 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Characteristic
BVCBO
50
—
—
V
IC = 100µA
Collector-Emitter Breakdown Voltage
BVCEO
45
—
—
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5
—
—
V
IC = 100µA
—
—
100
5.0
nA
µA
VCE = 45V
VCE = 25V, TJ = +150°C
—
—
100
nA
VEB = 5.0V
Collector-Emitter Cut-Off Current
ICES
Emitter-Base Cut-Off Current
DC Current Gain (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Voltage (Note 9)
Gain Bandwidth Product
Collector-Base Capacitance
Note:
IEBO
BC817-16
BC817-25
BC817-40
BC817-16
BC817-25
BC817-40
hFE
100
160
250
60
100
170
—
250
400
600
Test Condition
VCE = 1.0V, IC = 100mA
—
—
VCE = 1.0V, IC = 300mA
VCE(SAT)
—
—
0.7
V
IC = 500mA, IB = 50mA
VBE
—
—
1.2
V
VCE = 1.0V, IC = 300mA
fT
100
—
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
CCBO
—
—
12
pF
VCB = 10V, f = 1.0MHz
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
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Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
500
400
300
200
100
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
40
20
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
0
0.5
VCE = 1V
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
60
0
0
1,000
80
150°C
TA = 25°C
-50°C
100
0.4
IC / IB = 10
0.3
0.2
25° C
0.1
150°C
10
0
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
0.1
1,000
fT, GAIN-BANDWIDTH PRODUCT (MHz)
-50°C
0.1
100
1,000
1
10
IC, COLLECTOR CURRENT (mA)
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
100
10
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Figure 5 Gain-Bandwidth Product vs. Collector Current
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Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
All 7°
H
K1
J
K
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
-All Dimensions in mm
GAUGE PLANE
0.25
a
M
A
L
C
L1
B
D
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
Y
C
Y1
X
BC817-16/ -25/ -40
Document number: DS11107 Rev. 21 - 2
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X1
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Copyright © 2016, Diodes Incorporated
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Document number: DS11107 Rev. 21 - 2
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