BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (3) (2) (1) Q1 Q2 Compliant (4) MAXIMUM RATINGS − NPN Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847 BC848 VCEO 65 45 30 V Collector-Base Voltage BC846 BC847 BC848 VCBO 80 50 30 V VEBO 6.0 V IC 100 mAdc Symbol Value Unit BC846 BC847 BC848 VCEO −65 −45 −30 V BC846 BC847 BC848 VCBO −80 −50 −30 V VEBO −5.0 V IC −100 mAdc Emitter−Base Voltage Collector Current − Continuous Collector-Emitter Voltage Collector-Base Voltage (6) MARKING DIAGRAM 6 1 MAXIMUM RATINGS − PNP Rating (5) SOT−363 CASE 419B STYLE 1 XX MG G 1 XX = Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Mark Package Shipping† BC846BPDW1T1G BB SOT−363 (Pb−Free) 3000 / Tape & Reel BC847BPDW1T1G BF SOT−363 (Pb−Free) 3000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC847BPDW1T2G BF SOT−363 (Pb−Free) 3000 / Tape & Reel THERMAL CHARACTERISTICS BC848CPDW1T1G BL SOT−363 (Pb−Free) 3000 / Tape & Reel Emitter−Base Voltage Collector Current − Continuous Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol Max Unit PD 380 250 mW 3.0 mW/°C RqJA 328 °C/W TJ, Tstg −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR−5 = 1.0 x 0.75 x 0.062 in. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 6 1 Publication Order Number: BC846BPDW1T1/D BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 65 45 30 − − − − − − 80 50 30 − − − − − − 80 50 30 − − − − − − 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 − − 150 270 − − 200 420 290 520 475 800 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = 10 mA) Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846 Series BC847 Series BC848 Series BC846 Series BC847B Only BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE BC846B, BC847B BC848C BC846B, BC847B BC848C − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 pF − − 10 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 NF dB BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 − − 150 270 − − 200 420 290 520 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 mA, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)CEO BC846 Series BC847 Series BC848 Series V(BR)CES BC846 Series BC847 Series BC848 Series V(BR)CBO BC846 Series BC847 Series BC848 Series V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = −10 mA, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE BC846B, BC847B BC848C BC846B, BC847B BC848C Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://onsemi.com 3 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846 0.30 500 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.05 −55°C 0.0001 25°C 0.5 150°C 0.3 0.1 0.0001 0.001 0.01 0.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current 2.0 -1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 1.2 1.1 IC, COLLECTOR CURRENT (A) TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.001 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 0.6 0.2 25°C Figure 1. DC Current Gain vs. Collector Current −55°C 0.4 150°C 0.10 IC, COLLECTOR CURRENT (A) 0.9 0.7 0.15 IC, COLLECTOR CURRENT (A) IC/IB = 20 0.8 0.20 0 1 1.1 1.0 IC/IB = 20 0.25 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 -1.4 -1.8 qVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 0.2 Figure 5. Collector Saturation Region 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 6. Base−Emitter Temperature Coefficient http://onsemi.com 4 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846 f, T CURRENT-GAIN - BANDWIDTH PRODUCT 40 C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 4.0 2.0 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 VCE = 5 V TA = 25°C 500 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) 100 Figure 7. Capacitance Figure 8. Current−Gain − Bandwidth Product http://onsemi.com 5 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846 0.30 500 400 25°C 300 −55°C 200 100 0 0.001 0.01 0.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.20 25°C 0.15 0.10 −55°C 0.05 0.0001 0.1 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current −55°C IC/IB = 20 25°C 0.6 150°C 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Voltage vs. Collector Current -2.0 -1.0 -1.6 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.01 Figure 9. DC Current Gain vs. Collector Current 0.7 -1.2 0.001 IC, COLLECTOR CURRENT (A) 0.8 0.2 150°C IC, COLLECTOR CURRENT (A) 1.0 0.9 IC/IB = 20 0.25 0 1 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C -20 Figure 13. Collector Saturation Region -1.4 -1.8 qVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 -0.2 -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 14. Base−Emitter Temperature Coefficient http://onsemi.com 6 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846 f, T CURRENT-GAIN - BANDWIDTH PRODUCT 40 C, CAPACITANCE (pF) TJ = 25°C 20 Cib 10 8.0 6.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 15. Capacitance Figure 16. Current−Gain − Bandwidth Product http://onsemi.com 7 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC847 SERIES 0.30 500 VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 0.10 −55°C 0.05 0.0001 0.1 Figure 18. Collector Emitter Saturation Voltage vs. Collector Current −55°C IC/IB = 20 25°C 150°C 0.7 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 0.9 −55°C 0.8 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 19. Base Emitter Saturation Voltage vs. Collector Current Figure 20. Base Emitter Voltage vs. Collector Current 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) 0.01 Figure 17. DC Current Gain vs. Collector Current 0.8 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.001 IC, COLLECTOR CURRENT (A) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.15 IC, COLLECTOR CURRENT (A) 0.9 0.2 150°C 0.20 0 1 1.1 1.0 IC/IB = 20 0.25 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 Figure 21. Collector Saturation Region 10 1.0 IC, COLLECTOR CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient http://onsemi.com 8 100 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL NPN CHARACTERISTICS − BC847 SERIES 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 23. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 24. Current−Gain − Bandwidth Product http://onsemi.com 9 50 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC847 SERIES 0.35 150°C VCE = 1 V VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 500 400 25°C 300 200 −55°C 100 0 0.001 0.01 0.1 0.10 −55°C 0.05 0.0001 −55°C IC/IB = 20 25°C 150°C 0.6 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 27. Base Emitter Saturation Voltage vs. Collector Current Figure 28. Base Emitter Voltage vs. Collector Current 1.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) 0.1 1.2 1.1 IC, COLLECTOR CURRENT (A) TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA -0.4 0 0.01 Figure 26. Collector Emitter Saturation Voltage vs. Collector Current 0.7 -0.8 0.001 Figure 25. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.15 IC, COLLECTOR CURRENT (A) 0.8 0.2 0.20 IC, COLLECTOR CURRENT (A) 1.0 0.9 150°C 0.25 0 1 IC/IB = 20 0.30 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) IC = -200 mA IC = -100 mA -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -10 -20 Figure 29. Collector Saturation Region -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) Figure 30. Base−Emitter Temperature Coefficient http://onsemi.com 10 -100 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G 10 Cib 7.0 C, CAPACITANCE (pF) TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL PNP CHARACTERISTICS − BC847 SERIES 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 31. Capacitances Figure 32. Current−Gain − Bandwidth Product http://onsemi.com 11 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC848 SERIES 1000 0.30 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 900 800 150°C 700 600 25°C 500 400 300 −55°C 200 100 0 0.001 0.01 0.1 −55°C 0.05 0.0001 IC/IB = 20 −55°C 25°C 0.7 150°C 0.6 0.5 0.4 0.3 0.1 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 35. Base Emitter Saturation Voltage vs. Collector Current Figure 36. Base Emitter Voltage vs. Collector Current 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) 0.01 Figure 34. Collector Emitter Saturation Voltage vs. Collector Current 0.8 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.001 Figure 33. DC Current Gain vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.10 IC, COLLECTOR CURRENT (A) 0.9 0.2 25°C 0.15 IC, COLLECTOR CURRENT (A) 1.1 1.0 150°C 0.20 0 1 IC/IB = 20 0.25 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 Figure 37. Collector Saturation Region 10 1.0 IC, COLLECTOR CURRENT (mA) Figure 38. Base−Emitter Temperature Coefficient http://onsemi.com 12 100 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL NPN CHARACTERISTICS − BC848 SERIES 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 39. Capacitances 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 40. Current−Gain − Bandwidth Product http://onsemi.com 13 50 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC848 SERIES 1000 0.30 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 1 V 150°C 900 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0.01 0.1 0.10 −55°C 0.05 0.0001 −55°C IC/IB = 20 25°C 150°C 0.5 0.4 0.3 0.0001 0.001 0.01 0.1 1.2 1.1 VCE = 5 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 43. Base Emitter Saturation Voltage vs. Collector Current Figure 44. Base Emitter Voltage vs. Collector Current 1.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) 0.1 Figure 42. Collector Emitter Saturation Voltage vs. Collector Current 0.6 TA = 25°C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -20 mA -0.4 0 0.01 Figure 41. DC Current Gain vs. Collector Current 0.7 -0.8 0.001 IC, COLLECTOR CURRENT (A) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 25°C 0.15 IC, COLLECTOR CURRENT (A) 0.8 0.2 150°C 0.20 0 1 1.0 0.9 IC/IB = 20 0.25 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) IC = -200 mA IC = -100 mA -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -10 -20 Figure 45. Collector Saturation Region -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) Figure 46. Base−Emitter Temperature Coefficient http://onsemi.com 14 -100 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G 10 Cib 7.0 C, CAPACITANCE (pF) TA = 25°C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL PNP CHARACTERISTICS − BC848 SERIES 400 300 200 150 VCE = -10 V TA = 25°C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 47. Capacitances Figure 48. Current−Gain − Bandwidth Product http://onsemi.com 15 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 49. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 50 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 49. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 50. Active Region Safe Operating Area http://onsemi.com 16 BC846BPDW1T1G, BC847BPDW1T1G, BC848CPDW1T1G PACKAGE DIMENSIONS SC−88/SOT−363/SC70−6 CASE 419B−02 ISSUE W D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. e 6 5 4 HE DIM A A1 A3 b C D E e L HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches SC−88/SC70−6/SOT−363 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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