BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 Dual General Purpose Transistors http://onsemi.com NPN Duals (3) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. (2) Q1 Q2 (4) Features (1) (5) • These are Pb−Free Devices (6) BC847CDXV6T1 MAXIMUM RATINGS Rating Symbol BC847 BC848 Unit Collector − Emitter Voltage VCEO 45 30 V Collector − Base Voltage VCBO 50 30 V Emitter − Base Voltage VEBO 6.0 5.0 V IC 100 100 mAdc Collector Current − Continuous 6 1 SOT−563 CASE 463A PLASTIC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit 357 2.9 mW mW/°C RqJA 350 °C/W Symbol Max Unit 500 4.0 mW mW/°C 250 °C/W Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) 1 1x Total Device Dissipation, (Note 1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction-to-Ambient (Note 1) RqJA Junction and Storage Temperature Range 1x M G G TJ, Tstg −55 to +150 °C M G = Device Code x = G or M = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 1. FR−4 @ Minimum Pad © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 2 1 Publication Order Number: BC847CDXV6T1/D BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 30 − − − − 50 30 − − − − 50 30 − − − − 6.0 5.0 − − − − − − − − 15 5.0 − 420 270 520 − 800 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC847CDXV6T1 BC848CDXV6T1 Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC847CDXV6T1 BC848CDXV6T1 Collector −Base Breakdown Voltage (IC = 10 mA) BC847CDXV6T1 BC848CDXV6T1 Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC847CDXV6T1 BC848CDXV6T1 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 pF − − 10 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) NF dB ORDERING INFORMATION Package Shipping† BC847CDXV6T1 SOT−563 4000 Units / Tape & Reel BC847CDXV6T1G SOT−563 (Pb−Free) 4000 Units / Tape & Reel SOT−563 8000 Units / Tape & Reel BC847CDXV6T5G SOT−563 (Pb−Free) 8000 Units / Tape & Reel BC848CDXV6T1 SOT−563 4000 Units / Tape & Reel BC848CDXV6T1G SOT−563 (Pb−Free) 4000 Units / Tape & Reel SOT−563 8000 Units / Tape & Reel SOT−563 (Pb−Free) 8000 Units / Tape & Reel Device BC847CDXV6T5 BC848CDXV6T5 Specific Marking 1G 1L BC848CDXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 1000 0.30 VCE = 1 V 150°C 800 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 900 700 600 25°C 500 400 −55°C 300 200 100 0 0.001 0.01 0.1 0.6 −55°C 0.05 0.0001 0.001 0.01 0.1 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 20 −55°C 25°C 150°C 0.3 0.2 0.10 Figure 1. DC Current Gain vs. Collector Current 0.5 0.4 25°C IC, COLLECTOR CURRENT (A) VBE(on), BASE−EMITTER VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.7 0.15 IC, COLLECTOR CURRENT (A) 0.9 0.8 150°C 0.20 0 1 1.1 1.0 IC/IB = 20 0.25 0.0001 0.001 0.01 0.1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 0.1 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 TYPICAL CHARACTERISTICS 1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 40 20 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 Figure 7. Capacitances 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 100 mS 10 mS 1 mS 1S 0.1 Thermal Limit 0.01 0.001 0.1 30 Figure 8. Current−Gain − Bandwidth Product 1 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) TA = 25°C 5.0 100 Figure 6. Base−Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 5. Collector Saturation Region 7.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 1 10 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 9. Safe Operating Area http://onsemi.com 4 100 50 BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 1 e A 5 4 2 3 L E −Y− b NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. HE DIM A b C D E e L HE C 5 PL 6 0.08 (0.003) M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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