Pan Jit BC850AW Npn general purpose transistor Datasheet

DATA SHEET
BC846W,BC847W,BC848W,BC849W,BC850W SERIES
NPN GENERAL PURPOSE TRANSISTORS
30/45/65 Volts
VOLTAGE
150 mWatts
CURRENT
SOT-323
Unit: inch (mm)
FEATURES
• NPN epitaxial silicon, planar design
.087(2.2)
.070(1.8)
• Collector current IC = 100mA
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
.054(1.35)
.045(1.15)
MECHANICAL DATA
.087(2.2)
.078(2.0)
.004(.10)MIN.
• General purpose amplifier applications
.006(.15)
.002(.05)
.056(1.40)
.047(1.20)
Case: SOT-323, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
.004(.10)MAX.
.016(.40)
.078(.20)
D evice M arking:
B C 846AW =46A
B C 847AW =47A
B C 848AW =48A
B C 846B W =46B
B C 847B W =47B
B C 848B W =48B
B C 849B W =49B
B C 850B W =50B
B C 847C W =47C
B C 848C W =48C
B C 849C W =49C
B C 850C W =50C
.044(1.1)
.035(0.9)
Approx. Weight: 0.0052 gram
ABSOLUTE RATINGS
PARAMETER
Symbol
Value
Units
Collector - Emitter Voltage
B C 846
BC847,BC850
BC848,BC849
VCEO
65
45
30
V
Collector - Base Voltage
B C 846
BC847,BC850
BC848,BC849
VCBO
80
50
30
V
Emitter - Base Voltage
B C 846
BC847,BC850
BC848,BC849
VEBO
6.0
6.0
5.0
V
IC
100
mA
S ym bol
Value
U nits
M ax P ow erD issipation (N ote 1)
P TO T
150
mW
Therm alR esistance ,Junction to A m bient
RθJA
833
Junction Tem perature
TJ
-55 to 150
O
C
S torage Tem perature
TISTG
-55 to 150
O
C
Collector Current - Continuous
THERMAL CHARACTERISTICS
PA R A M E TE R
O
C /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-JUL.06.2004
PAGE . 1
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
S ym b o l
Te s t C o n d i t i o n
M IN .
T YP.
MA X .
U ni t s
B C 8 4 6 A W, B W
C o l l e c t o r - E m i t t e r B r e a k d o w n V o l t a g e B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
V (BR) C E O IC = 1 0 m A , IB = 0
65
45
30
-
-
V
C o lle c to r - B a s e B re a k d o wn Vo lta g e
B C 8 4 6 A W, B W
B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
V (BR) C B O IC = 1 0 u A , IE = 0
80
50
30
-
-
V
E mi tte r - B a s e B re a k d o wn Vo lta g e
B C 8 4 6 A W, B W
B C 8 4 7 A W / B W / C W, B C 8 5 0 B W / C W
B C 8 4 8 A W / B W / C W, B C 8 4 9 B W / C W
V (BR) E B O IE = 1 0 u A , IC = 0
6 .0
6 .0
5 .0
-
-
V
E m i t t e r - B a s e C ut o f f C ur r e nt
IEBO
V E B =5
-
-
100
nA
C o l l e c t o r - B a s e C ut o f f C ur r e nt
IC BO
V C B = 3 0 V , IE = 0
V C B = 3 0 V , IE = 0 , T J = 1 5 0 O C
-
-
15
5 .0
nA
uA
B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W "
hF E
IC = 1 0 u A , V C E = 5 V
-
90
150
270
-
-
B C 8 4 6 ~ B C 8 4 8 S uf f i x " AW "
B C 8 4 6 ~ B C 8 5 0 S uf f i x " B W "
B C 8 4 7 ~ B C 8 5 0 S uf f i x " C W "
hF E
IC = 2 . 0 m A , V C E = 5 V
11 0
200
420
180
290
520
220
450
800
-
D C C ur r e nt G a i n
D C C ur r e nt G a i n
C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e
V C E(SAT)
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
-
-
0 .2 5
0 .6
V
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
V C E(SAT)
IC = 1 0 m A , IB = 0 . 5 m A
IC = 1 0 0 m A , IB = 5 . 0 m A
-
0 .7
0 .9
-
V
B a s e - E mi tte r Vo lta g e
V C E(SAT)
IC = 2 m A , V C E = 5 . 0 V
IC = 1 0 m A , V C E = 5 . 0 V
0 .5 8
-
0 .6 6 0
-
0 .7 0
0 .7 7
V
-
-
4 .5
pF
C o l l e c t o r - B a s e C a p a c i t a nc e
STAD-JUL.06.2004
C C BO
V C B = 1 0 V , IE = 0 , f = 1 M H
PAGE . 2
ELECTRICAL CHARACTERISTICS CURVE (BC846AW,BC847AW,BC848AW)
300
TJ =150˚ C
VCB=30V
250
TJ=100˚ C
200
10
hFE
ICB0, Collector Current (nA)
100
TJ=25 C
150
100
1
VCE=5V
50
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1200
1000
1000
TJ = 25 ˚C
TJ = 100 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 150 ˚C
100
TJ = 25 ˚C
400
VCE=5V
IC/IB=20
TJ = 150 ˚C
200
0
0.01
0.1
1
10
100
10
0.01
1000
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
10
1200
TJ = 25 ˚C
1000
Cib (EB)
VBE(sat), (mV)
Capacitance, C (pF)
TJ = 25 ˚C
800
TJ = 100 ˚C
600
400
200
IC/IB=20
TJ = 150 ˚C
0
0.01
Cob (CB)
1
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
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PAGE . 3
ELECTRICAL CHARACTERISTICS CURVE (BC846BW,BAC847BW,BC848BW,BC849BW,BC850BW)
500
VCE=5V
TJ =150˚ C
450
VCB=30V
400
350
10
TJ=100˚ C
300
hFE
ICB0, Collector Current (nA)
100
250
TJ =25 ˚C
200
1
150
100
50
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
1000
Collector Current, IC (mA)
O
Junction Temperature, TJ ( C)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 100 ˚C
TJ = 150 ˚C
100
400
TJ = 25 ˚C
200
0
0.01
0.1
IC/IB=20
VCE=5V
TJ = 150 ˚C
1
10
100
10
0.01
1000
0.1
1
100
1000
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
10
1000
Cib (EB)
800
TJ = 100 ˚C
600
400
200
Cob (CB)
IC/IB=20
TJ = 150 ˚C
0
0.01
1
0.1
1
10
100
0.1
Collector Current, IC (mA)
Fig. 5. Typical VBE(SAT) vs. Collector Current
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TJ = 25 ˚C
Capacitance, C (pF )
TJ = 25 ˚C
VBE(sat), (mV)
10
Collector Current, IC (mA)
1
10
100
Reverse Voltage (V)
Fig. 6.
Typical Capacitances vs. Reverse Voltage
PAGE . 4
ELECTRICAL CHARACTERISTICS CURVE (BAC847CW,BC848CW,BC849CW,BC850CW)
1200
100
TJ =150˚ C
1000
10
hFE
ICB0, Collector Current (nA)
VCE=5V
VCB=30V
800
TJ =100˚ C
600
TJ =25 C
400
1
200
0
0.01
0
25
50
75
100
125
150
0.1
1
10
100
1000
Collector Current, IC, (mA)
Junction Temperature, TJ (OC)
Fig. 1. Typical ICB0 vs. Junction Temperature
Fig. 2. Typical hFE vs. Collector Current
1000
1200
1000
TJ = 25 ˚C
TJ = 100 ˚C
VCE(sat), (mV)
VBE(ON), (mV)
800
600
TJ = 100 ˚C
TJ = 150 ˚C
100
400
TJ = 25 ˚C
200
VCE=5V
TJ = 150 ˚C
0
0.01
0.1
1
10
100
IC/IB=20
10
0.01
1000
0.1
1
10
100
1000
Collector Current, IC (mA)
Collector Current, IC (mA)
Fig. 3. Typical VBE(ON) vs. Collector Current
Fig. 4. Typical VCE(SAT) vs. Collector Current
1200
10
1000
TJ = 25 ˚C
Cib (EB)
VBE(sat), (mV)
800
Capacitance, C (pF )
TJ = 25 ˚C
TJ = 100 ˚C
600
400
Cob (CB)
IC/IB=20
200
TJ = 150 ˚C
0
0.01
1
0.1
1
10
100
0.1
1
10
100
Collector Current, IC (mA)
Reverse Voltage (V)
Fig. 5. Typical VBE(SAT) vs. Collector Current
Fig. 6. Typical Capacitances vs. Reverse Voltage
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PAGE . 5
MOUNTING PAD LAYOUT
SOT-323
0.075(1.9)
0.035(0.9)
Unit: inch (mm)
0.025(0.65)
0.028(0.7)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3.0K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUL.06.2004
PAGE . 6
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