ON BC850BLT1G General purpose transistor Datasheet

BC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: > 4000 V
•
•
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ESD Rating − Machine Model: > 400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
VCEO
Vdc
2
VCBO
Vdc
VEBO
Vdc
IC
100
XX M G
G
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
MARKING DIAGRAM
6.0
6.0
5.0
BC846
BC847, BC850
BC848, BC849
Collector Current − Continuous
SOT−23
CASE 318
STYLE 6
80
50
30
BC846
BC847, BC850
BC848, BC849
Emitter−Base Voltage
1
65
45
30
BC846
BC847, BC850
BC848, BC849
Collector−Base Voltage
3
Unit
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
ORDERING INFORMATION
RqJA
556
°C/W
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
PD
300
mW
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 1994
January, 2017 − Rev. 17
1
Publication Order Number:
BC846ALT1/D
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CEO
65
45
30
−
−
−
−
−
−
V
Collector −Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846A, B
BC847A, B, C BC850B, C
BC848A, B, C, BC849B, C
V(BR)CES
80
50
30
−
−
−
−
−
−
V
Collector −Base Breakdown Voltage
(IC = 10 mA)
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)CBO
80
50
30
−
−
−
−
−
−
V
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
BC846A, B
BC847A, B, C, BC850B, C
BC848A, B, C, BC849B, C
V(BR)EBO
6.0
6.0
5.0
−
−
−
−
−
−
V
ICBO
−
−
−
−
15
5.0
nA
mA
hFE
−
−
−
90
150
270
−
−
−
−
110
200
180
290
220
450
420
520
800
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
−
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
−
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
−
660
−
700
770
mV
fT
100
−
−
MHz
Cobo
−
−
4.5
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 kW,
f = 1.0 kHz, BW = 200 Hz)
NF
BC846A,B, BC847A,B,C, BC848A,B,C
BC849B,C, BC850B,C
pF
dB
−
−
−
−
10
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
300
300
VCE = 1 V
VCE = 5 V
150°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
150°C
200
25°C
100 −55°C
0
200
25°C
100 −55°C
0
0.001
0.01
1
0.1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.18
0.16
IC/IB = 20
150°C
0.14
0.12
25°C
0.10
0.08
0.06
−55°C
0.04
0.02
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
0.9
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
−55°C
IC/IB = 20
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base Emitter Voltage vs. Collector
Current
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3
0.1
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 7. Base−Emitter Temperature Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 6. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 8. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 9. Current−Gain − Bandwidth Product
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4
50
BC846ALT1G Series
BC846B, SBC846B
600
VCE = 1 V
150°C
500
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
400
25°C
300
200 −55°C
100
0
VCE = 5 V
150°C
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
1
0.1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 10. DC Current Gain vs. Collector
Current
Figure 11. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
150°C
0.25
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 12. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Saturation Voltage vs.
Collector Current
Figure 14. Base Emitter Voltage vs. Collector
Current
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5
0.1
BC846ALT1G Series
2.0
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
BC846B, SBC846B
TA = 25°C
1.6
20 mA
50 mA
100 mA
200 mA
1.2
IC =
10 mA
0.8
0.4
0
0.02
0.05
0.1
0.2
0.5
1.0 2.0
IB, BASE CURRENT (mA)
5.0
10
1.4
1.8
qVB for VBE
2.6
3.0
20
0.2
Figure 15. Collector Saturation Region
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TA = 25°C
20
Cib
10
6.0
2.0
Cob
0.1
0.2
1.0 2.0
10 20
0.5
5.0
VR, REVERSE VOLTAGE (VOLTS)
50
0.5
10 20
50
1.0 2.0
5.0
IC, COLLECTOR CURRENT (mA)
100
200
Figure 16. Base−Emitter Temperature Coefficient
40
4.0
-55°C to 125°C
2.2
VCE = 5 V
TA = 25°C
500
200
100
50
20
1.0
5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
100
Figure 17. Capacitance
Figure 18. Current−Gain − Bandwidth Product
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BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC847B, SBC848B
600
VCE = 1 V
150°C
500
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
600
400
25°C
300
200 −55°C
100
0
VCE = 5 V
150°C
500
400
25°C
300
200 −55°C
100
0
0.001
0.01
1
0.1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 19. DC Current Gain vs. Collector
Current
Figure 20. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
0.25
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 21. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 22. Base Emitter Saturation Voltage vs.
Collector Current
Figure 23. Base Emitter Voltage vs. Collector
Current
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0.1
BC846ALT1G Series
BC847B, BC848B, BC849B, BC850B, SBC846B, SBC847B, SBC848B
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 25. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 24. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 26. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 27. Current−Gain − Bandwidth Product
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8
50
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
1000
1000
VCE = 1 V
150°C
700
600
VCE = 5 V
900 150°C
800
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
900
25°C
500
400
300 −55°C
200
100
800
700
600
25°C
500
400
−55°C
300
200
100
0
0
0.001
0.01
1
0.1
0.001
0.01
1
0.1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 28. DC Current Gain vs. Collector
Current
Figure 29. DC Current Gain vs. Collector
Current
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.30
IC/IB = 20
0.25
150°C
0.20
25°C
0.15
0.10
−55°C
0.05
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 30. Collector Emitter Saturation Voltage
vs. Collector Current
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
1.0
IC/IB = 20
VBE(on), BASE−EMITTER VOLTAGE (V)
1.1
−55°C
0.9
25°C
0.8
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1.2
VCE = 5 V
1.1
1.0
−55°C
0.9
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 31. Base Emitter Saturation Voltage vs.
Collector Current
Figure 32. Base Emitter Voltage vs. Collector
Current
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0.1
BC846ALT1G Series
BC847C, BC848C, BC849C, BC850C, SBC847C
1.0
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC =
IC =
10 mA 20 mA
IC = 50 mA
IC = 100 mA
0.8
0.4
0
0.02
10
0.1
1.0
IB, BASE CURRENT (mA)
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
20
10
C, CAPACITANCE (pF)
5.0
TA = 25°C
Cib
3.0
Cob
2.0
1.0
0.4 0.6 0.8 1.0
2.0
20
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
100
Figure 34. Base−Emitter Temperature
Coefficient
40
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 33. Collector Saturation Region
7.0
10
1.0
IC, COLLECTOR CURRENT (mA)
0.2
Figure 35. Capacitances
400
300
200
VCE = 10 V
TA = 25°C
100
80
60
40
30
20
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mAdc)
30
Figure 36. Current−Gain − Bandwidth Product
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10
50
BC846ALT1G Series
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
100 mS 10 mS
1 mS
0.1
1S
Thermal Limit
0.01
0.001
0.001
1
10
0.1
100
1
10
100
VCE, COLLECTOR EMITTER VOLTAGE (V)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 37. Safe Operating Area for
BC846A, BC846B
Figure 38. Safe Operating Area for
BC847A, BC847B, BC847C, BC850B, BC850C
IC, COLLECTOR CURRENT (A)
1
100 mS 10 mS
1 mS
1S
0.1
Thermal Limit
0.01
0.001
0.1
1
10
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 39. Safe Operating Area for
BC848A, BC848B, BC848C, BC849B, BC849C
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100
BC846ALT1G Series
ORDERING INFORMATION
Device
Marking
Package
Shipping†
BC846ALT1G
SBC846ALT1G*
3,000 / Tape & Reel
1A
BC846ALT3G
10,000 / Tape & Reel
BC846BLT1G
3,000 / Tape & Reel
SBC846BLT1G*
BC846BLT3G
1B
10,000 / Tape & Reel
SBC846BLT3G*
BC847ALT1G
BC847ALT3G
3,000 / Tape & Reel
1E
10,000 / Tape & Reel
BC847BLT1G
3,000 / Tape & Reel
SBC847BLT1G*
BC847BLT3G
1F
10,000 / Tape & Reel
NSVBC847BLT3G*
BC847CLT1G
SBC847CLT1G*
3,000 / Tape & Reel
1G
BC847CLT3G
BC848ALT1G
1J
SOT−23
(Pb−Free)
10,000 / Tape & Reel
3,000 / Tape & Reel
BC848BLT1G
SBC848BLT1G*
3,000 / Tape & Reel
1K
BC848BLT3G
10,000 / Tape & Reel
BC848CLT1G
NSVBC848CLT1G*
3,000 / Tape & Reel
1L
BC848CLT3G
10,000 / Tape & Reel
BC849BLT1G
NSVBC849BLT1G*
3,000 / Tape & Reel
2B
BC849BLT3G
10,000 / Tape & Reel
BC849CLT1G
BC849CLT3G
3,000 / Tape & Reel
2C
10,000 / Tape & Reel
BC850BLT1G
NSVBC850BLT1G*
2F
3,000 / Tape & Reel
BC850CLT1G
NSVBC850CLT1G*
2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified
and PPAP Capable.
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12
BC846ALT1G Series
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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