DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors Preliminary specification Supersedes data of 1998 Nov 10 1999 May 21 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series PINNING FEATURES • Power dissipation comparable to SOT23 PIN DESCRIPTION • Low current (max. 100 mA) 1 base • Low voltage (max. 65 V). 2 emitter 3 collector APPLICATIONS • General purpose switching and amplification especially in portable equipment. DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. handbook, halfpage 1 MARKING CODE TYPE NUMBER 3A BC857CF BC856BF 3B BC858AF 3J BC857AF 3E BC858BF 3K BC857BF 3F BC858CF 3L 1999 May 21 Top view MARKING CODE BC856AF 3 1 MARKING TYPE NUMBER 3 2 2 MAM411 3G Fig.1 2 Simplified outline (SC-89; SOT490) and symbol. Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS MAX. UNIT open emitter BC856AF; BC856BF − −80 V BC857AF; BC857BF; BC857CF − −50 V − −30 V BC856AF; BC856BF − −65 BC857AF; BC857BF; BC857CF − −45 BC858AF; BC858BF; BC858CF − −30 − −5 V BC858AF; BC858BF; BC858CF VCEO MIN. collector-emitter voltage open base VEBO emitter-base voltage IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 May 21 3 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 500 K/W in free air; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IE = 0; VCB = −30 V MIN. − MAX. −15 UNIT ICBO collector cut-off current IE = 0; VCB = −30 V; Tj = 150 °C − −5 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − −100 nA hFE DC current gain IC = −2 mA; VCE = −5 V BC856AF; BC857AF; BC858AF 125 250 BC856BF; BC857BF; BC858BF 220 475 BC857CF; BC858CF 420 800 IC = −10 mA; IB = −0.5 mA − −200 mV IC = −100 mA; IB = −5 mA; note 1 − −400 mV IC = −2 mA; VCE = −5 V −600 −750 mV IC = −10 mA; VCE = −5 V − −820 mV VCEsat collector-emitter saturation voltage VBE base-emitter voltage nA Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 2.5 pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 220 Hz − 10 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 May 21 4 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 1999 May 21 REFERENCES IEC JEDEC EIAJ SC-89 5 EUROPEAN PROJECTION ISSUE DATE 98-10-23 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such 1999 May 21 6 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series NOTES 1999 May 21 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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