KODENSHI BC858UF Pnp silicon transistor Datasheet

BC858UF
Semiconductor
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=-30V
• Complementary pair with BC848UF
Ordering Information
Type NO.
Marking
BC858UF
Package Code
SOT-323F
AV
: hFE rank
Outline Dimensions
unit : mm
1.95~2.25
0.40 Max.
1.20~1.40
1.30 Typ.
3
0.10 Max.
0.60~0.80
2
0.16 Max.
1.90~2.10
1
KST-3039-001
PIN Connections
1. Base
2. Emitter
3. Collector
1
BC858UF
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
-30
V
Collector-Emitter voltage
VCEO
-30
V
Emitter-Base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Collector dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
Electrical Characteristics
(Ta=25°C)
Characteristic
Symbol
Collector-Emitter breakdown voltage
BVCEO
IC=-1mA, IB=0
Base-Emitter turn on voltage
VBE(ON)
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Noise Figure
Test Condition
Min. Typ. Max.
Unit
-30
-
-
V
VCE=-5V, IC=-2mA
-
-
-700
mV
VBE(sat)
IC=-100mA, IB=-5mA
-
-900
-
mV
VCE(sat)
IC=-100mA, IB=-5mA
-
-
-650
mV
VCB=-35V, IE= 0
-
-
-15
nA
110
-
800
-
VCB=-5V, IC=-10mA
-
150
-
MHz
Cob
VCB=-10V, IE=0, f=1MHz
-
-
4.5
pF
NF
VCE=-5V, IC=-200µA,
f=1KHz,Rg=2KΩ, ∆f=200Hz
-
-
10
dB
ICBO
*
hFE
fT
VCE=-5V, IC=-2mA
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-3039-001
2
BC858UF
Electrical Characteristic Curves
Fig. 1 PC-Ta
Fig. 2 IC-VBE
Fig. 3 IC-VCE
Fig. 4 hFE-IC
Fig. 5 VCE(sat)-IC
KST-3039-001
3
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