BCR16KM-12LC Triac Medium Power Use REJ03G0328-0200 Rev.2.00 Dec.17.2004 Features • • • • • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type IT (RMS) : 16 A VDRM : 600 V IFGTI , IRGTI, IRGT : 50 mA Viso : 2000 V Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Rev.2.00, Dec.17.2004, page 1 of 7 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V BCR16KM-12LC Parameter RMS on-state current Symbol IT (RMS) Ratings 16 Unit A Surge on-state current ITSM 96 A I2 t 38 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 W W V A °C °C g V Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.75 Unit mA V Test conditions Tj = 125°C, VDRM applied VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) — — — — — — 0.2 — — — — — — — — — 1.5 1.5 1.5 50 50 50 — 3.4 V V V mA mA mA V °C/W Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 (dv/dt)c 10 — — V/µs Tj = 125°C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 75°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Tc = 25°C, ITM = 25 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 8 A/ms 3. Peak off-state voltage VD = 400 V Rev.2.00, Dec.17.2004, page 2 of 7 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR16KM-12LC Performance Curves Maximum On-State Characteristics 120 Tj = 25°C Surge On-State Current (A) On-State Current (A) 102 7 5 Rated Surge On-State Current 3 2 101 7 5 3 2 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 2 5 7 101 3 2 3 5 7 102 VGM = 10 V PGM = 5 W VGT = 1.5 V PG(AV) = 0.5 W IGM = 2 A IFGT I IRGT II IRGT III VGD = 0.2 V 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Trigger Current vs. Junction Temperature 103 7 5 Typical Example IRGTIII 3 2 102 7 5 IFGTI 3 IRGTI 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 Typical Example 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Dec.17.2004, page 3 of 7 Transient Thermal Impedance (°C/W) Gate Voltage (V) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 20 Gate Characteristics (I, II and III) 3 2 Rev.2.00, 40 Conduction Time (Cycles at 60 Hz) 100 7 5 10-1 101 60 On-State Voltage (V) 101 7 5 3 2 80 0 100 3.8 102 7 5 3 2 100 102 2 3 5 7 103 10-1 2 3 5 7 100 2 3 4.0 2 3 5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60 Hz) BCR16KM-12LC No Fins 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 360° Conduction Resistive, 15 inductive loads 10 5 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20 160 Ambient Temperature (°C) Case Temperature (°C) 20 Conduction Time (Cycles at 60 Hz) 140 All fins are black painted aluminum and greased 140 120 120 × 120 × t2.3 100 100 × 100 × t2.3 80 60 × 60 × t2.3 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 160 Ambient Temperature (°C) On-State Power Dissipation (W) 25 7 5 3 2 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 RMS On-State Current (A) Rev.2.00, Maximum On-State Power Dissipation 103 Dec.17.2004, page 4 of 7 4.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 106 7 5 3 2 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR16KM-12LC 103 7 5 Latching Current (mA) 3 2 102 7 5 3 2 Distribution 3 2 3 2 101 7 5 T2+, G+ Typical Example T2–, G– 100 -60 -40 -20 101 0 20 40 60 80 100 120 140 160 T2+, G– Typical Example 102 7 5 3 2 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) 103 7 5 Typical Example -60 -40 -20 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C) 160 140 Typical Example Tj = 150°C 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/µs) Rev.2.00, Latching Current vs. Junction Temperature Dec.17.2004, page 5 of 7 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 Minimum Characteristics Value III Quadrant I Quadrant Typical Example Tj = 125°C IT = 4 A τ = 500 ms VD = 200 V f = 3 Hz 100 7 100 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR16KM-12LC Gate Trigger Current vs. Gate Current Pulse Width 7 5 3 2 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Commutation Characteristics (Tj = 150°C) Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 III Quadrant I Quadrant Typical Example 3 Tj = 150°C IT = 4 A 2 τ = 500 ms VD = 200 V 100 f = 3 Hz 7 100 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) 6Ω A 6V 330 Ω V Test Procedure I V A V 330 Ω Test Procedure III Rev.2.00, Dec.17.2004, 330 Ω Test Procedure II 6Ω 6V A 6V page 6 of 7 Typical Example IRGTIII IRGTI 3 IFGTI 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 103 7 5 BCR16KM-12LC Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Tube 50 Type name Lead form Tube 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Dec.17.2004, page 7 of 7 Standard order code example BCR16KM-12LC BCR16KM-12LC-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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