BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two (galvanic) internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=10kΩ, R2=47kΩ) Tape loading orientation Type Marking Ordering Code Pin Configuration BCR 35PN WUs Package Q62702-C2495 1=E1 2=B1 3=C2 4= E2 5=B2 6= C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 115°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg V - 65 ... + 150 Thermal Resistance Junction ambient 1) Junction - soldering point RthJA ≤ 275 RthJS ≤ 140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 35PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 100 µA, IB = 0 Collector-base breakdown voltage nA - 100 µA - 167 hFE 70 - - VCEsat mV - - 0.3 Vi(off) IC = 100 µA, VCE = 5 V Input on Voltage - - IC = 10 mA, IB = 0.5 mA Input off voltage 50 IEBO IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) - - VEB = 6 V, IC = 0 DC current gain - ICBO VCB = 40 V, IE = 0 Emitter cutoff current 50 V(BR)CBO IC = 10 µA, IB = 0 Collector cutoff current V V 0.5 - 1 0.5 - 1.4 Vi(on) IC = 2 mA, VCE = 0.3 V Input resistor R1 7 10 13 kΩ Resistor ratio R1/R2 0.19 0.21 0.24 - AC Characteristics for NPN Type Transition frequency fT IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance MHz - 150 - Ccb VCB = 10 V, f = 1 MHz pF - 2 - 1) Pulse test: t < 300µs; D < 2% Semiconductor Group 2 Nov-26-1996 BCR 35PN NPN TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 2 10 3 - hFE IC mA 10 2 10 1 10 1 10 0 -1 10 10 0 10 1 10 0 0.0 mA 0.2 0.4 0.6 V IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 1.0 V CEsat Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA IC IC 10 0 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 10 -3 0.0 V V i(on) Semiconductor Group 0.5 1.0 V 2.0 V i(off) 3 Nov-26-1996 BCR 35PN PNP TYPE DC Current Gain hFE = f (IC) VCE = 5V (common emitter configuration) Collector-Emitter Saturation Voltage VCEsat = f(IC), hFE = 20 10 2 10 3 - hFE IC mA 10 2 10 1 10 1 10 0 -1 10 10 0 10 1 10 0 0.0 mA 0.2 0.4 0.6 V IC Input on Voltage Vi(on) = f(IC) VCE = 0.3V (common emitter configuration) 1.0 V CEsat Input off voltage Vi(off) = f(IC) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA IC IC 10 0 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 10 -3 0.0 V V i(on) Semiconductor Group 0.5 1.0 V 2.0 V i(off) 4 Nov-26-1996 BCR 35PN Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot TS TA 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 Semiconductor Group 10 -4 10 -3 10 10 1 -2 -1 10 s 10 tp 0 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Nov-26-1996