BCR5AM-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0452-0300 Rev.3.00 Nov 30, 2007 Features • Non-Insulated Type • Planar Passivation Type • IT(RMS) : 5 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6 Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 3 1 12 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Symbol Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 REJ03G0452-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 VDRM VDSM Voltage class 12 600 720 Unit V V BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Symbol IT(RMS) Ratings 5 Unit A Surge on-state current ITSM 50 A I2 t 10.4 A2s PGM PG(AV) VGM IGM Tj Tstg — 3 0.3 10 2 – 40 to +150 – 40 to +150 2.0 W W V A °C °C g Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.8 Unit mA V Gate non-trigger voltage VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD — — — — — — 0.2/0.1 — — — — — — — 1.5 1.5 1.5 20Note6 20Note6 20Note6 — V V V mA mA mA V Thermal resistance Rth(j-c) — — 3.0 °C/W Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Note4 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 I II III I II III Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 2.5 A/ms 3. Peak off-state voltage VD = 400 V REJ03G0452-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Performance Curves 100 7 5 90 Surge On-State Current (A) 102 3 2 101 Tj = 150°C 7 5 3 2 100 7 5 Tj = 25°C 3 2 10–1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 70 60 50 40 30 20 10 2 3 4 5 7 101 2 3 4 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 7 5 3 V = 1.5V 2 GT 100 7 5 3 2 PG(AV) = 0.3W PGM = 3W IGM = 2A IGT = 20mA 10–1 7 VGD = 0.1V 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 103 7 5 3 2 Typical Example IRGT III IRGT I 102 7 5 3 2 IFGT I 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) REJ03G0452-0300 Page 3 of 7 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 80 0 100 4.0 5 3 2 VGM = 10V Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Rated Surge On-State Current Rev.3.00 Nov 30, 2007 Transient Thermal Impedance (°C/W) On-State Current (A) Maximum On-State Characteristics 102 2 3 5 7 103 2 3 5 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current 160 7 140 6 360° Conduction Resistive, 5 inductive loads 4 3 2 1 0 2 3 4 5 6 7 8 Curves apply regardless of conduction angle 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 3 2 4 5 6 8 7 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 1 140 160 All fins are black painted aluminum and greased 120 × 120 × t2.3 120 100 × 100 × t2.3 100 60 × 60 × t2.3 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 1 3 2 4 0 5 6 7 Ambient Temperature (°C) 0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) 8 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 8 0 0.5 1.0 1.5 2.5 2.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current vs. Junction Temperature 106 7 5 3 2 Typical Example Holding Current (mA) On-State Power Dissipation (W) Maximum On-State Power Dissipation 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 REJ03G0452-0300 Page 4 of 7 Junction Temperature (°C) Rev.3.00 Nov 30, 2007 102 7 5 4 3 2 3.0 VD = 12V Distribution Typical Example 101 7 5 4 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Breakover Voltage vs. Junction Temperature T2+, G+ Typical Example T2–, G– 7 5 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 3 2 100 7 0 10 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant Minimum Characteristics Value III Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) REJ03G0452-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Latching Current (mA) 103 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Latching Current vs. Junction Temperature 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 5 III Quadrant I Quadrant 3 2 100 7 0 10 Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz Minimum Characteristics Value 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 4 3 IRGT I 2 102 7 5 4 3 2 Typical Example IRGT III IFGT I 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac Load 6Ω C1 A 6V 330Ω V Test Procedure I V A V 330Ω Test Procedure III REJ03G0452-0300 Page 6 of 7 Rev.3.00 Nov 30, 2007 C0 R0 330Ω Test Procedure II 6Ω 6V R1 A 6V C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω BCR5AM-12LB (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 Previous Code RENESAS Code PRSS0004AA-A MASS[Typ.] 2.0g 10.5Max Unit: mm 4.5 φ3.6 3.8Max 12.5Min 16Max 7.0 3.2 1.3 1.0 0.8 0.5 2.54 2.6 4.5Max 2.54 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. REJ03G0452-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 Standard order code example BCR5AM-12LB BCR5AM-12LB-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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