BCW32LT1 General Purpose Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 32 Vdc Collector-Base Voltage VCBO 32 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 100 mAdc Collector Current − Continuous 1 BASE 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Value SOT−23 (TO−236AB) CASE 318 STYLE 6 Unit mW 225 1.8 mW/°C RJA 556 °C/W PD 300 mW 2.4 mW/°C RJA 417 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM D2 M M = Date Code 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ORDERING INFORMATION Device BCW32LT1 BCW32LT1G Package Shipping† SOT−23 3000 Units / Reel SOT−23 (Pb−Free) 3000 Units / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 1 1 Publication Order Number: BCW32LT1/D BCW32LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) V(BR)CEO 32 − − Vdc Collector −Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 32 − − Vdc Emitter −Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO 5.0 − − Vdc − − − − 100 10 nAdc Adc 200 − 450 − − 0.25 0.55 − 0.70 Cobo − − 4.0 pF NF − − 10 dB OFF CHARACTERISTICS Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) VCE(sat) Base −Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 A 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 A 7.0 5.0 10 A 3.0 20 300 A 100 A 10 5.0 2.0 1.0 30 A 0.5 30 A 10 A 0.2 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 0.1 10 20 50 100 200 500 1k f, FREQUENCY (Hz) 2k 5k 10 10k Figure 1. Noise Voltage 20 50 100 200 500 1k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 2k 5k 10k BCW32LT1 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 1M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500k 20k 10k 5k 2.0 dB 2k 1k 500 200 100 50 BANDWIDTH = 1.0 Hz 200k 100k 50k 3.0 dB 4.0 dB 6.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 10 dB 500 700 20k 10k 2.0 dB 2k 1k 500 200 100 1k 1.0 dB 5k 5.0 dB 8.0 dB 10 20 Figure 3. Narrow Band, 100 Hz RS , SOURCE RESISTANCE (OHMS) 500k 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is defined as: 20k NF 20 log10 10k 5k 1.0 dB 2k 1k 500 200 100 50 3.0 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) R = Source Resistance () 2.0 dB 3.0 dB 5.0 dB 8.0 dB S 10 20 30 50 70 100 200 300 500 700 2 2 12 S In RS en2 4KTR 4KTRS 1k IC, COLLECTOR CURRENT (A) Figure 5. Wideband http://onsemi.com 3 BCW32LT1 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 −55 °C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 s 80 DUTY CYCLE ≤ 2.0% 300 A 200 A 40 100 A 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Collector Saturation Region V, VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics 1.4 1.2 400 A 60 0 20 IB = 500 A 50 1.6 0.8 25°C to 125°C 0 *VC for VCE(sat) − 55°C to 25°C −0.8 25°C to 125°C −1.6 −2.4 0.1 100 *APPLIES for IC/IB ≤ hFE/2 Figure 9. “On” Voltages VB for VBE 0.2 − 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 BCW32LT1 TYPICAL DYNAMIC CHARACTERISTICS 10 TJ = 25°C f = 1.0 MHz C, CAPACITANCE (pF) 7.0 Cib 5.0 Cob 3.0 2.0 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance http://onsemi.com 5 10 20 50 BCW32LT1 PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AK A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. L 3 1 V B S 2 G DIM A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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