BCX 51 / 52 / 53 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data IC = -1A Continuous Collector Current Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction Complementary NPN types: BCX54, 55, and 56 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Devices (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound (Note 2) UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.072 grams (Approximate) Applications • • SOT89 Medium Power Switching or Amplification Applications AF driver and output stages C E B C C B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 3) Product BCX51TA BCX5110TA BCX5116TA BCX52TA BCX5210TA BCX5216TA BCX53TA BCX5310TA BCX5316TA BCX5316TC BCX5316-13R Notes: Marking AA AC AD AE AG AM AH AK AL AL AL Reel size (inches) 7 7 7 7 7 7 7 7 7 13 13 Tape width (mm) 12 12 12 12 12 12 12 12 12 12 12 Quantity per reel 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 1,000 4,000 4,000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website http://www.diodes.com Marking Information xx = Product Type Marking Code, as follows: xx BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 BCX51 = AA BCX5110 = AC BCX5116 = AD 1 of 7 www.diodes.com BCX52 = AE BCX5210 = AG BCX5316 = AM BCX53 = AH BCX5310 = AK BCX5316 = AL June 2011 © Diodes Incorporated BCX 51 / 52 / 53 Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Symbol VCBO VCEO VEBO IC ICM IB IBM BCX51 -45 -45 BCX52 -60 -60 -5 -1 -1.5 -100 -200 BCX53 -100 -80 Unit V V V A mA Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Leads (Note 5) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG Value 1 124 10.0 -65 to +150 Unit W °C/W °C/W °C 4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Thermal resistance from junction to solder-point (on the exposed collector pad). BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 2 of 7 www.diodes.com June 2011 © Diodes Incorporated BCX 51 / 52 / 53 120 25mm x 25mm 1oz Cu Tamb = 25°C 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) Thermal Characteristics 100 Single pulse 10 1 100µ Max Power Dissipation (W) Transient Thermal Impedance 1.0 25mm x 25mm 1oz Cu Tamb = 25°C 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation 25mm x 25mm 1oz Cu 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 3 of 7 www.diodes.com June 2011 © Diodes Incorporated BCX 51 / 52 / 53 Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Typ Max Unit - - V IC = -100µA - - V IC = -10mA BVEBO Min -45 -60 -100 -45 -60 -80 -5 - V Collector Cut-off Current ICBO - - Emitter Cut-off Current IEBO - - -0.1 -20 -20 hFE 25 40 25 - 250 - VCE(sat) VBE(on) 63 100 - - 160 250 -0.5 -1.0 V V Transition Frequency fT 150 - - MHz Output Capacitance Cobo - - 25 pF IE = -10µA VCB = -30V VCB = -30V, TA = 150°C VEB = -4V IC = -5mA, VCE = -2V IC = -150mA, VCE = -2V IC = -500mA, VCE = -2V IC = -150mA, VCE = -2V IC = -150mA, VCE = -2V IC = -500mA, IB = -50mA IC = -500mA, VCE = -2V IC = -50mA, VCE = -10V f = 100MHz VCB = -10V, f = 1MHz BCX51 BCX52 BCX53 BCX51 BCX52 BCX53 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) BVCBO BVCEO Emitter-Base Breakdown Voltage All versions Static Forward Current Transfer Ratio (Note 6) 10 gain grp 16 gain grp Collector-Emitter Saturation Voltage (Note 6) Base-Emitter Turn-On Voltage (Note 6) Notes: nA 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 500 1.0 VCE = -5V IB = 10mA IB = 8mA 0.8 400 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) µA Test Condition IB = 6mA 0.6 IB = 4mA 0.4 IB = 2mA T A = 150°C 300 T A = 85°C 200 100 0.2 0 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 4 of 7 www.diodes.com T A = 25°C T A = -55°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current June 2011 © Diodes Incorporated 0.5 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 T A = 150°C 0.2 0.4 0.3 TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 VCE = -2V 0 0.001 TA = -55°C 0.01 0.1 1 -IC, COLLECTOR CURRENT(A) Fig 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.001 10 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 300 fT, GAIN-BANDWIDTH PRODUCT (MHz) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) BCX 51 / 52 / 53 1.0 0.8 T A = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C 0.2 IC / IB = 10 250 200 150 100 VCE = -5V f = 100MHz 50 0 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 20 40 60 80 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current 160 140 f = 1MHz CAPACITANCE(pF) 120 100 80 Cibo 60 40 20 Cobo 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 5 of 7 www.diodes.com June 2011 © Diodes Incorporated BCX 51 / 52 / 53 Package Outline Dimensions R0 D1 .2 00 C E SOT89 Dim Min Max A 1.40 1.60 B 0.44 0.62 B1 0.35 0.54 C 0.35 0.43 D 4.40 4.60 D1 1.52 1.83 E 2.29 2.60 e 1.50 Typ e1 3.00 Typ H 3.94 4.25 L 0.89 1.20 All Dimensions in mm H L B e B1 e1 8° (4 X ) A D Suggested Pad Layout X1 X2 (2x) Y1 Y3 Y4 Y2 Y C Dimensions Value (in mm) X 0.900 X1 1.733 X2 0.416 Y 1.300 Y1 4.600 Y2 1.475 Y3 0.950 Y4 1.125 C 1.500 X (3x) BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 6 of 7 www.diodes.com June 2011 © Diodes Incorporated BCX 51 / 52 / 53 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com BCX 51 / 52 / 53 Datasheet Number: DS35368 Rev. 2 – 2 7 of 7 www.diodes.com June 2011 © Diodes Incorporated