BD135 / 137 / 139
NPN Epitaxial Silicon Transistor
Features
• Complement to BD136, BD138 and BD140 respectively
Applications
• Medium Power Linear and Switching
1
1. Emitter
TO-126
2.Collector
3.Base
Ordering Information
Part Number
Marking
BD13516S
BD1356STU
BD13510STU
BD13516STU
BD13716STU
BD13710STU
BD13716S
BD13916STU
BD13910S
BD13916S
BD1396STU
BD13910STU
BD135-16
BD135-6
BD135-10
BD135-16
BD137-16
BD137-10
BD137-16
BD139-16
BD139-10
BD139-16
BD139-6
BD139-10
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
Package
Packing Method
Bulk
Rail
TO-126 3L
Bulk
Rail
Bulk
Rail
www.fairchildsemi.com
1
BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor
August 2013
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
PC
Device Dissipation
TJ
Junction Temperature
Storage Temperature
TSTG
Value
BD135
BD137
BD139
BD135
BD137
BD139
Units
45
60
80
45
60
80
5
1.5
3.0
0.5
12.5
1.25
150
- 55 to +150
TC = 25°C
TA = 25°C
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Symbol
VCEO(sus)
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
Parameter
Test Condition
BD135
BD137
BD139
Collector-Emitter Sustaining
Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 30 mA, IB = 0
VCB = 30 V, IE = 0
VEB = 5 V, IC = 0
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 150 mA
IC = 500 mA, IB = 50 mA
VCE = 2 V, IC = 0.5 A
Min.
Typ.
Max.
45
60
80
25
25
40
Units
V
0.1
10
μA
μA
250
0.5
1
V
V
hFE Classification
Classification
6
10
16
hFE3
40 ~ 100
63 ~ 160
100 ~ 250
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
2
BD135 / 137 / 139 — Features
Absolute Maximum Ratings
BD135 / 137 / 139 — Features
Typical Performance Characteristics
100
500
60
50
40
30
20
10
100
350
300
250
200
150
100
50
0
1E-3
0
10
400
IB
70
450
IC = 20 IB
hFE, DC CURRENT GAIN
80
IC = 10
VCE(sat)[mV], SATURATION VOLTAGE
V CE = 2V
90
1000
Figure 1. DC current Gain
0.1
1
10
Figure 2. Collector-Emitter Saturation Voltage
10
1.1
1.0
IC MAX. (Pulsed)
)
(on
V
V BE
=5
V CE
0.7
0.6
0.5
0.4
0.3
1
100us
0.1
BD139
BD137
BD135
IC[A], COLLECTOR CURRENT
0.8
10us
IC MAX. (Continuous)
s
1m
t)
(sa
V BE 0 I B
1
IC =
0.9
DC
VBE[V], BASE-EMITTER VOLTAGE
0.01
IC[A], COLLECTOR CURRENT
IC [mA], COLLECTOR CURRENT
0.2
0.01
0.1
1E-3
0.01
0.1
1
1
10
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
PC[W], POWER DISSIPATION
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
3
BD135 / 137 / 139 — Features
Physical Dimensions
TO-126 3L
0$;
'
;
;
352'8&7,21 7(50,1$/
/(1*7+'
&2'(
76678
7678
127(6
121(
$ 7+,63$&.$*('2(6127&203/<72$1<
67'/(1*7+
&85(173$&.$*,1*67$1'$5'
% $//',0(16,216$5(,10,//,0(7(56
& ',0(16,216$5((;&/86,9(2)%855602/')/$6+
$1'7,(%$5(;7586,216
' )257(50,1$//(1*7+6((7$%/(
( '5$:,1*),/(1$0($1'5(9,6,210.772$$UHY
Figure 6. TO-126 (SOT-32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/TO/TO126AA.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-TO126AA_BK.pdf.
© 2007 Fairchild Semiconductor Corporation
BD135 / 137 / 139 Rev. 1.2.0
www.fairchildsemi.com
4
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I65
© Fairchild Semiconductor Corporation
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