BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • High DC Current Gain • BD 135, 137, 139 are complementary with BD 136, 138, 140 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 1.5 A POWER TRANSISTORS NPN SILICON 45, 60, 80 V, 12.5 W Compliant* COLLECTOR 2, 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD135G BD137G BD139G VCEO Collector−Base Voltage BD135G BD137G BD139G VCBO Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.5 Adc Base Current IB 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.25 10 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 12.5 100 Watts mW/°C – 55 to + 150 °C Operating and Storage Junction Temperature Range 3 BASE Vdc 45 60 80 1 EMITTER Vdc 45 60 100 TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM TJ, Tstg YWW BD1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW BD1xx THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 10 °C/W Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 17 1 G = Year = Work Week = Device Code xx = 35, 37, 39 = Pb−Free Package ORDERING INFORMATION Package Shipping BD135G TO−225 (Pb−Free) 500 Units / Box BD135TG TO−225 (Pb−Free) 50 Units / Rail BD137G TO−225 (Pb−Free) 500 Units / Box BD139G TO−225 (Pb−Free) 500 Units / Box Device Publication Order Number: BD135/D BD135G, BD137G, BD139G ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BD135G BD137G BD139G BVCEO* Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TC = 125_C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.005 A, VCE = 2 V) (IC = 0.15 A, VCE = 2 V) (IC = 0.5 A VCE = 2 V) hFE* Collector−Emitter Saturation Voltage* (IC = 0.5 Adc, IB = 0.05 Adc) VCE(sat)* Base−Emitter On Voltage* (IC = 0.5 Adc, VCE = 2.0 Vdc) VBE(on)* Min Max UnIt Vdc 45 60 80 − − − − − 0.1 10 − 10 25 40 25 − 250 − − 0.5 − 1 mAdc mAdc − Vdc Vdc Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 1000 0.3 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 2 V 150°C 25°C −55°C 100 10 150°C IC/IB = 10 0.2 −55°C 25°C 0.1 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage http://onsemi.com 2 BD135G, BD137G, BD139G 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 VBE(on), BASE−EMITTER ON VOLTAGE (V) TYPICAL CHARACTERISTICS VCE = 2 V 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter On Voltage 10 1000 IC, COLLECTOR CURRENT (A) f = 1 MHz Cib 100 Cob 10 0.1 ms 5 ms 0.5 ms 1 TJ = 125°C dc 0.1 BD135 BD137 BD139 0.01 1 0.1 1 10 1 100 10 VR, REVERSE VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Capacitance Figure 6. Active−Region Safe Operating Area 1.50 PD, POWER DISSIPATION (W) C, CAPACITANCE (pF) 1.2 1.25 1.00 0.75 0.50 0.25 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) Figure 7. Power Derating http://onsemi.com 3 140 160 80 BD135G, BD137G, BD139G PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. 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