isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD750/750A DESCRIPTION · Collector-Emitter Sustaining Voltage: VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A ·High Power Dissipation ·Complement to Type BD751/751A APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO(SUS) VEBO PARAMETER VALUE BD750 -100 BD750A -130 BD750 -90 BD750A -120 Collector-Emitter Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage -7 V IC Collector Current-Continuous -20 A IB Base Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors BD750/750A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS BD750 VBE(sat) ICEV Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT TYP. MAX BD750 UNIT -90 IC= -100mA ; IB= 0 V -120 BD750A VCE(sat) MIN IC= -7.5A; IB= -0.75A -1.5 B V BD750A IC= -5A; IB= -0.5A -1.0 BD750 IC= -7.5A; IB= -0.75A -1.8 BD750A IC= -5A; IB= -0.5A -1.8 BD750 VCEV= -100V;VBE(off)= -1.5V -0.5 BD750A VCEV= -130V;VBE(off)= -1.5V -0.5 VEB= -7V; IC=0 -1.0 B B V B mA BD750 IC= -7.5A ; VCE= -2V 15 60 BD750A IC= -5A ; VCE= -2V 25 100 IC= -0.5A ;VCE= -10V; ftest= 1MHz 4 Current-Gain—Bandwidth Product isc Website：www.iscsemi.cn 2 mA MHz