ISC BD948 Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD944/946/948
DESCRIPTION
·DC Current Gain: hFE= 85(Min)@ IC= -500mA
·Complement to Type BD943/945/947
APPLICATIONS
·Designed for use in audio output stages and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
VALUE
BD944
-22
BD946
-32
BD948
-45
BD944
-22
BD946
-32
BD948
-45
UNIT
V
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IB
Base Current-Continuous
-1
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
isc Website:www.iscsemi.cn
MAX
UNIT
3.12
℃/W
70
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD944/946/948
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD944
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD946
VBE(on)
Collector-Emitter
Saturation Voltage
Base-Emitter
On Voltage
ICEO
IC= -100mA ; IB= 0
-45
-0.5
BD948
IC= -3A; IB= -0.3A
-0.7
BD944/946
IC= -2A; VCE= -1V
-1.1
B
V
B
V
IC= -3A; VCE= -1V
-1.3
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0,TJ=150℃
-0.05
-1
mA
-0.1
mA
-0.2
mA
BD944
VCE= -15V; IB= 0
BD946
VCE= -20V; IB= 0
BD948
VCE= -25V; IB= 0
B
B
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -10mA ; VCE= -5V
25
hFE-2
DC Current Gain
IC= -500mA ; VCE= -1V
85
BD944/946
hFE-3
UNIT
V
-32
IC= -2A; IB= -0.2A
Collector Cutoff Current
Collector
Cutoff Current
MAX
BD944/946
BD948
ICBO
TYP.
-22
BD948
VCE(sat)
MIN
DC Current Gain
475
50
IC= -2A ; VCE= -1V
BD948
40
hFE-4
DC Current Gain--Only For BD948
IC= -3A ; VCE= -1V
30
fT
Current-Gain—Bandwidth Product
IC= -250mA ; VCE= -1V
3
isc Website:www.iscsemi.cn
2
MHz
Similar pages