ISC BD956F Isc silicon pnp power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD950F/952F/954F/956F
DESCRIPTION
·DC Current Gain: hFE= 40(Min)@ IC= -500mA
·Complement to Type BD949F/951F/953F/955F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BD950F
-60
BD952F
-80
BD954F
-100
BD956F
-120
BD950F
-60
BD952F
-80
BD954F
-100
BD956F
-120
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
PC
Collector Power Dissipation
@ TC=25℃
22
W
TJ
Junction Temperature
150
℃
-65~150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
8.12
℃/W
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD950F/952F/954F/956F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-Emitter
Sustaining Voltage
CONDITIONS
MIN
BD950F
-60
BD952F
-80
TYP.
MAX
IC= -100mA ; IB= 0
UNIT
V
BD954F
-100
BD956F
-120
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
-1.0
V
VBE(on)
Base-Emitter On Voltage
IC= -2A; VCE= -4V
-1.4
V
ICBO
Collector Cutoff Current
VCB= VCBOmax; IE= 0
1
VCB= /2VCBOmax; IE= 0,TJ=150℃
-0.05
-1
mA
ICEO
Collector Cutoff Current
VCE= 1/2VCEOmax; IB= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-0.2
mA
hFE-1
DC Current Gain
IC= -500mA ; VCE= -4V
hFE-2
DC Current Gain
IC= -2A ; VCE= -4V
Current-Gain—Bandwidth Product
IC= -500mA ; VCE= -4V
fT
B
40
20
3
MHz
Switching Times
ton
Turn-On Time
0.3
μs
1.5
μs
IC= -1.0A; IB1= -IB2= -0.1A
toff
Turn-Off Time
isc Website:www.iscsemi.cn
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